Polytechnique > Recherche > Répertoire > Un professeur ou chercheur

Répertoire des expertises

Photo de Patrick Desjardins

Patrick Desjardins

Professeur titulaire et directeur
Département de génie physique

Publications à Polytechnique

Ces données sont extraites du Répertoire des publications de l'École Polytechnique de Montréal. La liste ci-dessous contient seulement les publications auxquelles a participé le professeur ou le chercheur depuis son entrée en fonction à l’École. De plus, certaines publications ne sont pas dans cette liste, notamment les notes de cours et les rapports techniques internes plus d'information...

1Turcotte, S., Beaudry, J.N., Masut, R.A., Desjardins, P., Bentoumi, G., Leonelli, R. (2012). Abnormal Broadening of the Optical Transitions in (Ga,As)N/Gaas Quantum Wells. Physical Review B, 85(3).
2Levesque, A., Desjardins, P., Leonelli, R., Masut, R.A. (2011). Temperature Dependence of the Photoluminescence Spectra From InAs(P)/InP Multilayers Containing Thick Quantum Dots: Dot-Size-Dependent Carrier Dynamics. Physical Review. B, Condensed Matter and Materials Physics, 83(23), p. 235304. 
3Bratland, K.A., Spila, T., Cahill, D.G., Greene, J.E., Desjardins, P. (2011). Continuum Model of Surface Roughening and Epitaxial Breakdown During Low-Temperature Ge(001) Molecular Beam Epitaxy. Journal of Applied Physics, 109(6).
4Levesque, P.L., Sabri, S.S., Aguirre, C.M., Guillemette, J., Siaj, M., Desjardins, P., Szkopek, T., Martel, R. (2011). Probing Charge Transfer at Surfaces Using Graphene Transistors. Nano Letters, 11(1), p. 132-137. 
5Gaudet, S., Desjardins, P., Lavoie, C. (2011). The Thermally-Induced Reaction of Thin Ni Films With Si : Effect of the Substrate Orientation. Journal of Applied Physics, 110(11).
6Gaudet, S., Coia, C., Desjardins, P., Lavoie, C. (2010). Metastable Phase Formation During the Reaction of Ni Films With Si(001): The Role of Texture Inheritance. Journal of Applied Physics, 107(9), p. 093515. 
7Virgilio, N., Desjardins, P., L'Esperance, G., Favis, B.D. (2010). Modified Interfacial Tensions Measured in Situ in Ternary Polymer Blends Demonstrating Partial Wetting. Polymer, 51(6), p. 1472-1484. 
8Zhen Zhang, Bin Yang, Yu Zhu, Gaudet, S., Rossnagel, S., Kellock, A.J., Ozcan, A., Murray, C., Desjardins, P., Shi-Li Zhang, Jordan-Sweet, J., Lavoie, C. (2010). Exploitation of a Self-Limiting Process for Reproducible Formation of Ultrathin Ni1-XPtx Silicide Films. Applied Physics Letters, 97(25), p. 252108. 
9Anahory, Y., Guihard, M., Smeets, D., Karmouch, R., Schiettekatte, F., Vasseur, P., Desjardins, P., Hu, L.A., Allen, L.H., Leon-Gutierrez, E., Rodriguez-Viejo, J. (2010). Fabrication, Characterization and Modeling of Single-Crystal Thin Film Calorimeter Sensors. Thermochimica Acta, 510(1-2), p. 126-136. 
10Girard-Lauriault, P.-L., Truica-Marasescu, F., Petit, A., Wang, H.T., Desjardins, P., Antoniou, J., Mwale, F., Wertheimer, M.R. (2009). Adhesion of Human U937 Monocytes to Nitrogen-Rich Organic Thin Films: Novel Insights into the Mechanism of Cellular Adhesion. Macromolecular Bioscience, 9(9), p. 911-921. 
11Virgilio, N., Desjardins, P., L'Esperance, G., Favis, B.D. (2009). In Situ Measure of Interfacial Tensions in Ternary and Quaternary Immiscible Polymer Blends Demonstrating Partial Wetting. Macromolecules, 42(19), p. 7518-7529. 
12Turcotte, S., Larouche, S., Beaudry, J.-N., Martinu, L., Masut, R.A., Desjardins, P., Leonelli, R. (2009). Evidence of Valence Band Perturbations in GaAsN/GaAs(001): Combined Variable-Angle Spectroscopic Ellipsometry and Modulated Photoreflectance Investigation. Physical Review. B, Condensed Matter and Materials Physics, 80(8), p. 085203. 
13Aguirre, C.M., Levesque, P.L., Paillet, M., Lapointe, F., St-Antoine, B.C., Desjardins, P., Martel, R. (2009). The Role of the Oxygen/Water Redox Couple in Suppressing Electron Conduction in Field-Effect Transistors. Advanced Materials, 21(30), p. 3087-3091. 
14Guihard, M., Turcotte-Tremblay, P., Gaudet, S., Coia, C., Roorda, S., Desjardins, P., Lavoie, C., Schiettekatte, F. (2009). Controlling Nickel Silicide Phase Formation by Si Implantation Damage. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 267(8-9), p. 1285-1289. 
15Lacroix, C., Lambert-Milot, S., Desjardins, P., Masut, R.A., Menard, D. (2009). Adjusting the Magnetic Properties of Semiconductor Epilayers by the Crystallographic Orientation of Embedded Highly Anisotropic Magnetic Nanoclusters. Journal of Applied Physics, 105(7), p. 07-119. 
16Aguirre, C.M., Ternon, C., Paillet, M., Desjardins, P., Martel, R. (2009). Carbon Nanotubes As Injection Electrodes for Organic Thin Film Transistors. Nano Letters, 9(4), p. 1457-1461. 
17Lambert-Milot, S., Lacroix, C., Menard, D., Masut, R.A., Desjardins, P., Garcia-Hernandez, M., De Andres, A. (2008). Metal-Organic Vapor Phase Epitaxy of Crystallographically Oriented Mnp Magnetic Nanoclusters Embedded in Gap(001). Journal of Applied Physics, 104(8).
18Turcotte, S., Beaudry, J.N., Masut, R.A., Desjardins, P., Bentoumi, G., Leonelli, R. (2008). Experimental Investigation of the Variation of the Absorption Coefficient With Nitrogen Content in Gaasn and Gainasn Grown on GaAs (001). Journal of Applied Physics, 104(8), p. 083511. 
19Turcotte, S., Larouche, S., Beaudry, J.-N., Martinu, L., Masut, R.A., Desjardins, P., Leonelli, R. (2008). Evidence of Valence Band Perturbations in GaAsN/GaAs(001): a Combined Variable-Angle Spectroscopic Ellipsometry and Modulated Photoreflectance Investigation. ArXiv.Org. 
20Girard-Lauriault, P.L., Desjardins, P., Unger, W.E.S., Lippitz, A., Wertheimer, M.R. (2008). Chemical Characterisation of Nitrogen-Rich Plasma-Polymer Films Deposited in Dielectric Barrier Discharges at Atmospheric Pressure. Plasma Processes and Polymers, 5(7), p. 631-644. 
21Arsenault, L.F., Movaghar, B., Desjardins, P., Yelon, A. (2008). Magnetotransport in the Insulating Regime of Mn-Doped Gaas. Physical Review. B, Condensed Matter and Materials Physics, 78(7), p. 075202-1 - 075202-12. 
22Beausoleil, A., Desjardins, P., Rochefort, A. (2008). Effects of Long Jumps, Reversible Aggregation, and Meyer-Neldel Rule on Submonolayer Epitaxial Growth. Physical Review E :Statistical, Nonlinear, and Soft Matter Physics, 78(2), p. 021604. 
23Dion, C., Desjardins, P., Schiettekatte, F., Chicoine, M., Robertson, M.D., Shtinkov, N., Poole, P.J., Wu, X., Raymond, S. (2008). Vacancy-Mediated Intermixing in Inas/Inp(001) Quantum Dots Subjected to Ion Implantation. Journal of Applied Physics, 104(4), p. 043527-1. 
24Adam, E., Aguirre, C.M., Marty, L., St-Antoine, B.C., Meunier, F., Desjardins, P., Menard, D., Martel, R. (2008). Electroluminescence From Single-Wall Carbon Nanotube Network Transistors. Nano Letters, 8(8), p. 2351-2355. 
25Arsenault, L.-F., Movaghar, B., Desjardins, P., Yelon, A. (2008). Transport in the Metallic Regime of Mn-Doped III-V Semiconductors. Physical Review. B, Condensed Matter and Materials Physics, 77(11), p. 115211-1 - 11511-13. 
26Dion, C., Desjardins, P., Shtinkov, N., Robertson, M.D., Schiettekatte, F., Poole, P.J., Raymond, S. (2008). Intermixing During Growth of InAs Self-Assembled Quantum Dots in InP: a Photoluminescence and Tight-Binding Investigation. Physical Review. B, Condensed Matter and Materials Physics, 77(7), p. 075338-1. 
27Lacroix, C., Lambert-Milot, S., Desjardins, P., Masut, R.A., Menard, D. (2008). Magnetic Anisotropy in Gap(001) Epilayers Containing Mnp Nanoclusters Observed by Angle Dependent Ferromagnetic Resonance Measurements. Journal of Applied Physics, 103(7).
28Beaudry, J.N., Masut, R.A., Desjardins, P. (2008). Gaas1-Xnx on Gaas(001): Nitrogen Incorporation Kinetics From Trimethylgallium, Tertiarybutylarsine, and 1,1-Dimethylhydrazine Organometallic Vapor-Phase Epitaxy. Journal of Crystal Growth, 310(6), p. 1040-1048. 
29Bentoumi, G., Yaiche, Z., Leonelli, R., Beaudry, J.N., Desjardins, P., Masut, R.A. (2008). Low-Temperature Emission in Dilute Gaasn Alloys Grown by Metalorganic Vapor Phase Epitaxy. Journal of Applied Physics, 103(6).
30Levesque, A., Shtinkov, N., Masut, R.A., Desjardins, P. (2008). Self-Organization of Inas/Inp Quantum Dot Multilayers: Pseudophase Diagram Describing the Transition From Aligned to Antialigned Structures. Physical Review Letters, 100(4).
31Dion, C., Desjardins, P., Shtinkov, N., Schiettekatte, F., Poole, P.J., Raymond, S. (2008). Effects of Grown-in Defects on Interdiffusion Dynamics in InAs/InP(001) Quantum Dots Subjected to Rapid Thermal Annealing. Journal of Applied Physics, 103, p. 083526. 
32Kampfrath, T., Volkmann, K.v., Nötzold, J., Aguirre, C.M., Desjardins, P., Martel, R., Krenz, M., Frischkorn, C., Wolf, M., Perfetti, L. (2008). Ultrafast Far-Infrared Optics of Carbon Nanotubes. Physical Review Letters, 101, p. 267403. 
33Virgilio, N., Desjardins, P., L'Esperance, G., Favis, B.D. (2008). The Newmann Triangle Method to Measure Interfacial Tensions in Immiscible Polymer Blends Using Focused Ion Beam and Atomic Force Miscroscopy. 24th Annual Meeting of Polymer Processing Society.
34Lanacer, A., Shtinkov, N., Desjardins, P., Masut, R.A., Leonelli, R. (2007). Optical Emission From Inas/Inp Self-Assembled Quantum Dots: Evidence for As/P Intermixing. Semiconductor Science and Technology, 22(12), p. 1282-1286. 
35Kampfrath, T., Perfetti, L., Von Volkmann, K., Aguirre, C.M., Desjardins, P., Martel, R., Frischkorn, C., Wolf, M. (2007). Optical Response of Single-Wall Carbon Nanotube Sheets in the Far-Infrared Spectral Range From 1 Thz to 40 Thz. Physica Status Solidi. B, Basic Solid State Physics, 244(11), p. 3950-3954. 
36Virgilio, N., Desjardins, P., L'Esperance, G., Favis, B.D. (2007). Novel Self-Assembling Pearl Necklace Microstructure Induced by Partial Wetting in Ternary Polymer Blends. Proceedings Conference. ACS Polymeric Materials: Science and Engineering. Fall Meeting 2007., p. 205-206. 
37Beaudry, J., Shtinkov, N., Masut, R.A., Desjardins, P., Rioboo, R.J.J. (2007). Compositional Dependence of the Elastic Constants of Dilute GaAs1-XNx Alloys. Journal of Applied Physics, 101(11), p. 113507-1. 
38Dion, C., Desjardins, P., Chicoine, M., Schiettekatte, F., Poole, P.J., Raymond, S. (2007). Drastic Ion-Implantation-Induced Intermixing During the Annealing of Self-Assembled InSs/InP(001) Quantum Dots. Nanotechnology, 18(1), p. 15404-15500. 
39Timoshevskii, V., Cote, M., Gilbert, G., Leonelli, R., Turcotte, S., Beaudry, J.N., Desjardins, P., Larouche, S., Martinu, L., Masut, R.A. (2006). Experimental and Theoretical Studies of the E+ Optical Transition in Gaasn Alloys. Physical Review B, 74(16).
40Dion, C., Poole, P.J., Raymond, S., Desjardins, P., Schiettekatte, F. (2006). Tuning of the Electronic Properties of Self-Assembled InAs/InP(001) Quantum Dots Using Grown-in Defect Mediated Intermixing. Applied Physics Letters, 89(13), p. 31905. 
41Shtinkov, N., Desjardins, P., Masut, R.A., Côté, M. (2006). Nitrogen Incorporation and Lattice Constant of Strained Dilute GaAs1-Xnx Layers on GaAs (001): an Ab Initio Study. Physical Review B, 7403(3), p. 5211. 
42Amassian, A., Svec, M., Desjardins, P., Martinu, L. (2006). Interface Broadening Due to Ion Mixing During Thin Film Growth at the Radio-Frequency-Biased Electrode in a Plasma-Enhanced Chemical Vapor Deposition Environment. Journal of Vacuum Science and Technology. A, Vacuum, Surfaces, and Films, 24(6), p. 2061-2069. 
43Amassian, A., Svec, M., Desjardins, P., Martinu, L. (2006). Dynamics of Ion Bombardment-Induced Modifications of Si(001) at the Radio-Frequency-Biased Electrode in Low-Pressure Oxygen Plasmas: in Situ Spectroscopic Ellipsometry and Monte Carlo Study. Journal of Applied Physics, 100(6), p. 63526-1. 
44Gaudet, S., Detavernier, C., Lavoie, C., Desjardins, P. (2006). Reaction of Thin Ni Films With Ge: Phase Formation and Texture. Journal of Applied Physics, 100(3), p. 34306-1. 
45Shtinkov, N., Desjardins, P., Masut, R.A., Cote, M. (2006). Nitrogen Incorporation and Lattice Constant of Strained Dilute GaAs1-XNx Layers on GaAs (001): an Ab Initio Study. Physical Review. B, Condensed Matter and Materials Physics, 74(3), p. 352111-352118. 
46Gaudet, S., Lavoie, C., Detavernier, C., Desjardins, P. (2006). Germanide Phase Formation and Texture. 2006 International SiGe Technology and Device Meeting, 15-17 May 2006, p. 18-19. 
47Aguirre, C.M., Auvray, S., Pigeon, S., Izquierdo, R., Desjardins, P., Martel, R. (2006). Carbon Nanotube Sheets As Electrodes in Organic Light-Emitting Diodes. Applied Physics Letters, 88(18), p. 183104-1. 
48Gaudet, S., Detavernier, C., Kellock, A.J., Desjardins, P., Lavoie, C. (2006). Thin Film Reaction of Transition Metals With Germanium. Journal of Vacuum Science and Technology. A, Vacuum, Surfaces, and Films, 24(3), p. 474-485. 
49Greene, J., Desjardins, P. (2006). TSF Volume 500 Editorial. Thin Solid Films, 500(1-2), p. 1-3. 
50Perfetti, L., Kampfrath, T., Schapper, F., Hagen, A., Hertel, T., Aguirre, C.M., Desjardins, P., Martel, R., Frischkorn, C., Wolf, M. (2006). Ultrafast Dynamics of Delocalized and Localized Electrons in Carbon Nanotubes. Physical Review Letters, 96(2).
51Amassian, A., Desjardins, P., Martinu, L. (2006). Ion-Surface Interactions on C-Si(001) at the Radiofrequency-Powered Electrode in Low-Pressure Plasmas: Ex Situ Spectroscopic Ellipsometry and Monte Carlo Simulation Study. Journal of Vacuum Science and Technology. A, Vacuum, Surfaces, and Films, 24(1), p. 45-54. 
52Coia, C., Lavoie, C., D'Heurle, F.M., Detavernier, C., Desjardins, P., Kellock, A.J. (2005). Reactive Diffusion in the Ni-Si System: Influence of Ni Thickness on the Phase Formation Sequence. 207th ECS Meeting, p. 585-596. 
53Coia, C., Lavoie, C., D'Heurle, F.M., Detavernier, C., Desjardins, P., Kellock, A.J. (2005). Reactive Diffusion in the Ni-Si System: Influence of Ni Thickness on the Phase Formation Sequence. 207th Meeting of the Electrochemical Society, p. 685. 
54Bergeron, D., Shtinkov, N., Masut, R.A., Desjardins, P. (2005). Green's Function Matching Method for One- and Zero-Dimensional Heterostructures. Physical Review. B, Condensed Matter and Materials Physics, 72(24), p. 245308-1. 
55Lavoie, C., Coia, C., D'heurle, F.M., Detavernier, C., Cabral, C., Desjardins, P., Kellock, A.J. (2005). Reactive Diffusion in the Ni-Si System: Phase Sequence and Formation of Metal-Rich Phases. Diffusion in Materials: Dimat 2004 : Proceedings of the 6th International Conference on Diffusion in Materials, p. 825-836. 
56Girard-Lauriault, P.-L., Mwale, F., Iordanova, M., Demers, C., Desjardins, P., Wertheimer, M.R. (2005). Atmospheric Pressure Deposition of Micropatterned Nitrogen-Rich Plasma-Polymer Films for Tissue Engineering. Plasma Processes and Polymers, 2(3), p. 263-270. 
57Chicoine, M., Beaudoin, C., Roorda, S., Masut, R.A., Desjardins, P. (2005). III-V Compliant Substrates Implemented by Nanocavities Introduced by Ion Implantation. Journal of Applied Physics, 97(6).
58Virgilio, N., Favis, B.D., Pepin, M.F., Desjardins, P., L'esperance, G. (2005). High Contrast Imaging of Interphases in Ternary Polymer Blends Using Focused Ion Beam Preparation and Atomic Force Microscopy. Macromolecules, 38(6), p. 2368-2375. 
59Amassian, A., Desjardins, P., Martinu, L. (2004). Dynamics of Surface Modifications During Optical Coating Deposition in Plasma-Assisted Processes. Optical Interference Coatings, p. TuE9. 
60Amassian, A., Desjardins, P., Martinu, L. (2004). Study of TiO2 Film Growth Mechanisms in Low-Pressure Plasma by in Situ Real-Time Spectroscopic Ellipsometry. Thin Solid Films, 447-448(3), p. 40-45. 
61Amassian, A., Verhnes, R., Klemberg-Sapieha, J.E., Desjardins, P., Martinu, L. (2004). Interface Engineering During Plasma-Enhances Chemical Vapor Deposition of Porous/Dense SiN1.3 Optical Multilayers. Thin Solid Films, 469-470, p. 47-53. 
62Amassian, A., Vernhes, R., Klemberg-Sapieha, J.E., Desjardins, P., Martinu, L. (2004). Interface Engineering of Porous/Dense Multilayers of SiN1.3: in Situ Real-Time Spectroscopic Ellipsometry Study. 47th Annual Technical Conference, Society of Vacuum Coaters.
63Amassian, A., Vernhes, R., Klemberg-Sapieha, J.E., Desjardins, P., Martinu, L. (2004). Study of the Growht and Interface Engineering of Dense/Porouss SiN1.3 Optical Coatings by Real-Time Spectroscopic Ellipsometry. Optical Interference Coatings, p. $$ MF3. 
64Beaudry, J.-N., Masut, R.A., Desjardins, P., Wei, P., Chicoine, M., Bentoumi, G., Leonelli, R., Schiettekatte, F., Guillon, S. (2004). Organometallic Vapor Phase Epitaxy of GaAs1-XNx Alloy Layers on GaAs(001): Nitrogen Incorporation and Lattice Parameter Variation. Journal of Vacuum Science and Technology. A, Vacuum, Surfaces, and Films, 22(3), p. 771-775. 
65Bentoumi, G., Timoshevskii, V., Madini, N., Cote, M., Leonelli, R., Beaudry, J.N., Desjardins, P., Masut, R. (2004). Evidence for Large Configuration-Induced Band-Gap Fluctuations in GaAs1-XNx Alloys. Physical Review. B, Condensed Matter and Materials Physics, 70(3), p. 35315.1-35315.5. 
66Duval, O., Lafrance, L.P., Savaria, Y., Desjardins, R. (2004). An Integrated Test Platform for Nanostructure Electrical Characterization. 2004 International Conference on Mems, Nano and Smart Systems, Proceedings, p. 237-242. 
67Girard, J.F., Dion, C., Desjardins, P., Allen, C.N., Poole, P.J., Raymond, S. (2004). Tuning of the Electronic Properties of Self-Assembled Inas/Inp(001) Quantum Dots by Rapid Thermal Annealing. Applied Physics Letters, 84(17), p. 3382-3384. 
68Girard-Lauriault, P.-L., Mwale, F., Iordanova, M., Desjardins, P., Wertheimer, M.R. (2004). Atmospheric Pressure Deposition of Micropatterned N-Rich Plasma-Polymer Films for Tissue Engineering. 9th International Symposium on High Pressure, Low Temperature Plasma Chemistry (Hakone IX).
69Shtinkiv, N., Desjardins, P., Masut, R.A. (2004). Localized and Extended States in Semiconductor Quantum Wells With Wire-Like Interface Islands. 27th International Conference on the Physics of Semiconductors, p. 953-954. 
70Shtinkov, N., Desjardins, P., Masut, R.A., Vlaev, S.J. (2004). Lateral Confinement and Band Mixing in Ultrathin Semiconductor Quantum Wells With Steplike Interfaces. Physical Review. B, Condensed Matter and Materials Physics, 70(15), p. 155302-1. 
71Shtinkov, N., Turcotte, S., Beaudry, J.N., Desjardins, P., Masut, R.A. (2004). Electronic and Optical Properties of Gaasn/Gaas Quantum Wells: a Tight-Binding Study. Journal of Vacuum Science and Technology. A, Vacuum, Surfaces, and Films, 22(4), p. 1606-1609. 
72Turcotte, S., Shtinkov, N., Desjardins, P., Masut, R.A., Leonelli, R. (2004). Empirical Tight-Binding Calculations of the Electronic Structure of Dilute Iii-V-N Semiconductor Alloys. Journal of Vacuum Science and Technology. A, Vacuum, Surfaces, and Films, 22(3), p. 776-780. 
73Wei, P., Chicoine, M., Gujrathi, S., Schiettekatte, F., Beaudry, J.N., Masut, R., Desjardins, P. (2004). Characterization of GaAs1-XNx Epitaxial Layers by Ion Beam Analysis. Journal of Vacuum Science and Technology. A, Vacuum, Surfaces, and Films, 22(3), p. 908-911. 
74Bratland, K.A., Foo, Y.L., Desjardins, P., Greene, J.E. (2003). Sn-Enhanced Epitaxial Thickness During Low-Temperature Ge(001) Molecular Beam Epitaxy. Applied Physics Letters, 82, p. 4247. 
75Bratland, K.A., Foo, Y.L., Soares, J., Spila, T., Desjardins, P., Greene, J.E. (2003). Mechanism for Epitaxial Breakdown During Low-Temperature Ge(001) Molecular Beam Epitaxy. Physical Review. B, Condensed Matter and Materials Physics, 67(12), p. 125322. 
76Chicoine, M., Roorda, S., Masut, R.A., Desjardins, P. (2003). Nanocavities in He Implanted InP. Journal of Applied Physics, 94(9), p. 6116-6121. 
77Foo, Y.L., Bratland, K.A., Cho, B., Desjardins, P., Greene, J.E. (2003). Si1-YCy/Si(001) Gas-Source Molecular Beam Epitaxy From Si2H6 and CH3SiH3: Surface Reaction Paths and Growth Kinetics. Journal of Applied Physics, 93, p. 3944-3950. 
78Malikova, L., Pollak, F.H., Masut, R.A., Desjardins, P., Mourokh, L.G. (2003). Temperature Dependent Contactless Electroreflectance Study of Intersubband Transitions in a Self-Assembled InAs/InP (001) Quantum Dot Structure. Journal of Applied Physics, 94(8), p. 4995-4998. 
79Shtinkov, N., Desjardins, P., Masut, R.A. (2003). Empirical Tight-Binding Model for the Electronic Structure of Dilute GaNAs Alloys. Physical Review. B, Condensed Matter and Materials Physics, 67(8), p. 81202-1. 
80Shtinkov, N., Desjardins, P., Masut, R.A. (2003). Lateral Confinement of Carriers in Ultrathin Semiconductor Quantum Wells. Microelectronics Journal: Low Dimensional Structures and Devices Conference (LDSD'2002), 8-13 Dec. 2002, 34(5-8), p. 459-462. 
81Spila, T., Desjardins, P., D'Arcy-Gall, J., Twesten, R.D., Greene, J.E. (2003). Effect of Steady-State Hydrogen Coverage on the Evolution of Crosshatch Morphology During Si1-XGex/Si(001) Growth From Hybride Precursors. Journal of Applied Physics, 93, p. 1918-1925. 
82Amassian, A., Larouche, S., Klemberg-Sapieha, J., Desjardins, P., Martinu, L. (2002). In Situ Ellipsometric Study of the Initial Growth Stages of a TiO2 by PECVD. Society of Vacuum Coaters : 45th Annual Technical Conference, p. 250-255. 
83Amassian, A., Larouche, S., Vernhes, R., Klemberg-Sapieha, J.E., Desjardins, P., Martinu, L. (2002). Analysis and Control of Optical Film Growth by in Situ Real-Time Spectroscopic Ellipsometry. Opto Canada. SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging.
84Foo, Y.L., Bratland, K.A., Cho, B., Soares, J.A.N.T., Desjardins, P., Greene, J.E. (2002). C Incorporation and Segregation During Si1-YCy/Si(001) Gas-Source Molecular Beam Epitaxy From Si2H6 and CH3SiH3. Surface Science, 513, p. 475-484. 
85Lavoie, C., Purtell, R., Coïa, C., Detavernier, C., Desjardins, P., Jordan-Sweet, J., Cabral, C.Jr., D'Heurle, F.M. (2002). In Situ Monitoring of Thin Film Reactions During Rapid Thermal Annealing: Nickel Silicide Formation. Rapid Thermal and Other Short-Time Processing Technologies III Electrochemical Society.
86Park, S.Y., D'arcy-Gall, J., Gall, D., Kim, Y.W., Desjardins, P., Greene, J.E. (2002). C Lattice Site Distributions in Metastable Ge1-YCy Alloys Grown on Ge(001) by Molecular-Beam Epitaxy. Journal of Applied Physics, 91(6), p. 3644-3652. 
87Park, S.Y., D'Arcy-Gall, J., Gall, D., Soares, J.A.N.T., Kim, Y.-W., Kim, H., Desjardins, P., Greene, J.E., Bishop, S.G. (2002). Carbon Incorporation Pathways and Lattice Sites in Si1-YCy Alloys Grown on Si(001) by Molecular-Beam Epitaxy. Journal of Applied Physics, 91(9), p. 5716-5727. 
88Shtinkov, N., Desjardins, P., Masut, R.A. (2002). Electronic States of Ultrathin InAs/InP (001) Quantum Wells: a Tight-Binding Study of the Effects of Band Offset, Strain, and Intermixing. Physical Review. B, Condensed Matter and Materials Physics, 66(19), p. 195303-1-8. 
89Spila, T., Desjardins, P., Vailionis, A., Kim, H., Taylor, N., Cahill, D.G., Greene, J.E., Guillon, S., Masut, R.A. (2002). Hydrogen-Mediated Quenching of Strain-Induced Surface Roughening During Gas-Source Molecular Beam Epitaxy of Fully-Coherent Si 0.7 Ge 0.3 Layers on Si(001). Journal of Applied Physics, 91(6), p. 3579-3588. 
90Tchebotareva, A., Brebner, J.L., Roorda, S., Desjardins, P., White, C.W. (2002). Structural Properties of InAs Nanocrystals Formed by Sequential Implantation of In and As Ions in the Si (100) Matrix. Journal of Applied Physics, 92(8), p. 4664-4671. 
91Chun, J.-S., Carlsson, J.R.A., Desjardins, P., Bergstrom, D.B., Petrov, I., Greene, J.E., Lavoie, C., Cabral, C.jr. (2001). Synchrotron X-Ray Diffraction and Transmission Electon Microscopy Studies of Interfacial Reaction Paths and Kinetics Annealing of Fully-002-Textured Al/TiN Bilayers. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures Processing, Measurement and Phenomena, 19(1), p. 182-191. 
92Chun, J.S., Desjardins, P., Lavoie, C., Petrov, I., Cabral, C., Greene, J.E. (2001). Interfacial Reaction Pathways and Kinetics During Annealing of 111-Textured Al-Tin Bilayers: a Synchrotron X-Ray Diffraction and Transmission Electron Microscopy Study. Journal of Vacuum Science and Technology. A, Vacuum, Surfaces, and Films, 19(5), p. 2207-2216. 
93Chun, J.S., Desjardins, P., Lavoie, C., Shin, C.S., Cabral, C., Petrov, I., Greene, J.E. (2001). Interfacial Reactions in Epitaxial Al/Tin(111) Model Diffusion Barriers: Formation of an Impervious Self-Limited Wurtzite- Structure Aln(0001) Blocking Layer. Journal of Applied Physics, 89(12), p. 7841-7845. 
94Chun, J.-S., Desjardins, P., Petrov, I., Greene, J.E., Lavoie, C., Cabral, C.Jr. (2001). Interfacial Reaction Pathways and Kinetics During Annealing of Epitaxial Al(001)/TiN(001) Model Diffusion Barrier Systems. Thin Solid Films, 391, p. 69-80. 
95D'Arcy-Gall, J., Gall, D., Petrov, I., Desjardins, P., Greene, J.E. (2001). Quantitative C Lattice Site Distributions in Epitaxial Ge1-YCy/Ge(001) Layers. Journal of Applied Physics, 90, p. 3910-3918. 
96Gall, D., Stadele, M., Jarrendahl, K., Petrov, I., Desjardins, P., Haasch, R.T., Lee, T.-Y., Greene, J.E. (2001). Electronic Structure of ScN Determined Using Optical Spectroscopy, Photoemission, Andabinitio Calculations. Physical Review, 63.
97Kim, H., Glass, G., Desjardins, P., Greene, J.E. (2001). Ultra-High Doped Si1-XGex(001):B Gas-Source Molecular Beam Epitaxy: Boron Surface Segregation and Its Effect on Film Growth Kinetics. Journal of Applied Physics., 89, p. 194-205. 
98Kim, H., Glass, G., Soares, J.A.N.T., Desjardins, P., Greene, J.E. (2001). Temperature-Modulated Si(001): As Gas-Source Molecular Beam Epitaxy: Growth Kinetics and As Incorporation. Applied Physics Letters, 79, p. 3263-3265. 
99Kodambaka, S., Petrova, V., Vailionis, A., Desjardins, P., Cahill, D.G., Petrov, I., Greene, J.E. (2001). TiN(001) and TiN(111) Island Coarsening Kinetics: In-Situ Scanning Tunneling Microscopy Studies. Thin Solid Films, 392, p. 164-168. 
100Raymond, S., Labrie, D., Girard, J.-F., Poirier, S., Awirothananon, S., Poole, P.J., Marchand, H., Desjardins, P., Masut, R.A. (2001). Tuning Og the Electronic Properties of Self-Assembled InAs/InP Quantum Dots by Rapid Thermal Annealing. Semiconductor Quantum Dots II, p. J9.6.1-J9.6.6. 
101Shin, C.-S., Gall, D., Kim, Y.-W., Desjardins, P., Petrov, I., Greene, J.E., Odén, M., Hultman, L. (2001). Epitaxial NaCl-Structure Delta-TaNx(001): Electronic Transport Properties, Elastic Modulus, and Hardness Vs. N/Ta Ratio. Journal of Applied Physics, 90, p. 2879-2895. 
102Veres, T., cai, M., Cochrane, R.W., Rouabhi, M., Roorda, S., Desjardins, P. (2001). MeV Si+ Irradiation of Ni/Fe Multilayers: Structural, Transport, and Magnetic Properties. Thin Solid Films, 382, p. 172-182. 
103Veres, T., Desjardins, P., Cochrane, R.W., Cai, M., Rouabhi, M., Cheng, L., Abdouche, R., Sutton, M. (2001). Mev Si+ Irradiation of Fe/Ni Bilayers: Influence of Microstructural and Interfacial Changes on Magnetic Properties. Thin Solid Films, 382(1-2), p. 164-171. 
104Beaudoin M., Desjardins P., Yip R.Y.F., Masut R.A. (2000). Optical and Structural Properties of InAsP/In(Ga)P Multilayers on InP(001): Strained-Layer Multiple Quantum Well Structures and Devices. InP and Related Compounds : Materials, Applications and Devices. Amsterdam: Gordon and Breach Publishing Group. 
105Beaudoin, M., Desjardins, P., Ait Ouali, A., Brebner, J.L., Yip, R.Y.F., Marchand, H., Isnard, L., Masut, R.A. (2000). Optical Properties and Heterojunction Band Alignment in Fully Coherent Strain-Compensated InAsxP1-x /GayIn1-YP Multilayers on InP(001). Journal of Applied Physics, 87(5), p. 2320-2326. 
106D'arcy Gall, J., Desjardins, P., Petrov, I., Greene, J.E., Paultre, J.E., Masut, R.A., Gujrathi, S.C., Roorda, S. (2000). Epitaxial Metastable Ge1-y Cy (y<=0.02) Alloys Grown on Ge(001) From Hyperthermal Beams: C Incorporation and Lattice Sites. Journal of Applied Physics, 88(1), p. 96-104. 
107D'Arcy-Gall, J., Gall, D., Desjardins, P., Petrov, I. (2000). Role of Fast Sputterred Particles During Sputter Deposition: Growth of Epitaxial Ge0.99C0.01/Ge(001). Physical Review. B, Condensed Matter, 62, p. 11203-11208. 
108Glass, G., Kim, H., Desjardins, P., Taylor, N., Spila, T., Lu, Q., Greene, J.E. (2000). Ultra-High B Doping (< 10^22 Cm-3) During Si(001) Gas-Source Molecular-Beam Epitaxy: B Incorporation, Electrical Activation, and Hole Transport. Physical Review, 61, p. 7628-7644. 
109Kim, H., Glass, G., Soares, J.A.N.T., Desjardins, P., Greene, J.E. (2000). Arsenic Incorporation During Si(001): As Gas-Source Molecular-Beam Epitaxy From Si2H6 and AsH3: Effects on Film Growth Kinetics. Journal of Applied Physics, 88, p. 7067-7078. 
110Kodambaka, S., Petrova, V., Vailionis, P., Desjardins, P., Cahill, D.G., Petrov, I., Greene, J.E. (2000). In-Situ High-Temperature Scanning Tunneling Microscopy Studies of Two-Dimensional Island Decay Kinetics on Atomically Flat Smooth TiN(001). Surface Review and Letters, 7, p. 589-593. 
111Taylor, N., Kim, H., Desjardins, P., Foo, Y.L., Greene, J.E. (2000). Si(001)16x2 Gas-Source Molecular-Beam Epitaxy: Growth Kinetics. Applied Physics Letters, 76, p. 2853-2855. 
112Vailionis, A., Cho, B., Glass, G., Desjardins, P., Cahill, D.G., Greene, J.E. (2000). Pathway for the Strain-Driven Two-Dimensional to Three-Dimensional Transition During Growth of Ge on Si(001). Physical Review Letters, 85(17), p. 3672-3675. 
113Desjardins, P., Spila, T., Gürdal, O., Taylor, N., Greene, J.E. (1999). Hybrid Surface Roughening Modes During Low-Temperature Heteroepitaxy: Growth of Fully-Strained Metastable Ge1-XSnx Alloys on Ge(001)2*1. Physical Review. B, Condensed Matter, 60(23), p. 15933-15998. 
114Soares, J.A.N.T., Kim, H., Glass, G., Desjardins, P., Greene, J.E. (1999). Arsenic-Doped Si(001) Gas-Source Molecular-Beam Epitaxy: Growth Kinetics and Transport Properties. Applied Physics Letters. 
115Taylor, N., Kim, H., Spila, T., Eades, J.A., Glass, G., Desjardins, P., Greene, J.E. (1999). Growth of Si1-XGex(011) on Si(011)16x2 by Gas-Source Molecular Beam Epitaxy: Growth Kinetics, Ge Incorporation, and Surface Phase Transitions. Journal of Applied Physics, 85(1), p. 501-511. 
116Desjardins, P., Isnard, L., Marchand, H., Masut, R.A. (1998). Competing Strain Relaxation Mechanisms in Organometallic Vapor Phase Epitaxy of Strain-Compensated GaInP/InAsP Multilayers on InP(001). Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(2), p. 776-780. 
117Guillon, S., Yip, R.Y.F., Desjardins, P., Chicoine, M., Bougrioua, Z., Beaudoin, M., Aït-Ouali, A., Masut, R.A. (1998). Low-Pressure Organometallic Vapor Phase Epitaxy of Coherent InGaAsP/InP and InGaAsP/InAsP Multilayers on InP(001). Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(2), p. 781-785. 
118Gujrathi, S.C., Roorda, S., D'Arcy, J.G., Pflueger, R.L., Desjardins, P., Petrov, I., Greene, J.E. (1998). Quantitative Compositional Depth Profiling of Si1-x-YGexCy Thin Films by Simultaneous Elastic Recoil Detection and Rutherford Backscattering Spectrometry. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 136-138, p. 654-660. 
119Gurdal, O., Desjardins, P., Carlsson, J.R.A., Taylor, N., Radamson, H.H., Sundgren, J.-E., Greene, J.E. (1998). Low-Temperature Growth and Critical Epitaxial Thickness of Fully-Strained Metastable Ge1-XSnx (x <0.26) Alloys on Ge(001)2x1. Journal of Applied Physics, 83(1), p. 162-170. 
120Kim, H., Desjardins, P., Abelson, J.R., Greene, J.E. (1998). Pathways for Hydrogen Desorption From Si1-XGex(001) During Gas-Source Molecular-Beam Epitaxy and Ultrahigh-Vacuum Chemical Vapor Deposition. Physical Review. B, Condensed Matter, 58(8), p. 4803-4808. 
121Rojas-López, M., Navarro-Contreras, H., Desjardins, P., Gurdal, O., Taylor, N., Carlsson, J.R.A., Greene, J.E. (1998). Raman Scattering From Fully Strained Ge1-XSnx (x<=0.22) Alloys Grown on Ge(001)2x1 by Low-Temperature Molecular Beam Epitaxy. Journal of Applied Physics, 84(4), p. 2219-2223. 
122Yip, R.Y.F., Desjardins, P., Isnard, L., Aït-Ouali, A., Bensaada, A., Marchand, H., Brebner, J.L., Currie, J.F., Masut, R.A. (1998). Band Alignment and Barrier Height Considerations for the Quantum-Confined Stark Effect. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(2), p. 801-804. 
123Ababou, Y., Desjardins, P., Chennouf, A., Masut, R.A., Yelon, A., Beaudoin, M., Bensaada, A., Leonelli, R., L'Espérance, G. (1997). Optical Absorption and Determination of Band Offset in Strain-Balanced GaInP/InAsP Multiple Quantum Wells Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy. Semiconductor Science and Technology, 12(5), p. 550-554. 
124Desjardins, P., Marchand, H., Isnard, L., Masut, R.A. (1997). Microstructure and Strain Relaxation in Organometallic Vapor Phase Epitaxy of Strain-Compensated GaInP/InAsP Multilayers on InP(001). Journal of Applied Physics, 81(8, pt. 1), p. 3501-3511. 
125Karr, B.W., Petrov, I., Desjardins, P., Cahill, D.G., Greene, J.E. (1997). In Situ Scanning Tunneling Microscopy Studies of the Evolution of Surface Morphology Ans Microstructure in Epitaxial TiN(001) Grown by Ultra-High-Vacuum Reactive Magnetron Sputtering. Surface and Coatings Technology, 94-95, p. 403-408. 
126Marchand, H., Desjardins, P., Guillon, S., Paultre, J.-E., Bougrioua, Z., Yip, R.Y.F., Masut, R.A. (1997). Growth of Self-Assembled InAs/InP(001) Nanometer-Sized Islands by Metalorganic Vapor Phase Epitaxy. Applied Physics Letters, 71(4), p. 527-529. 
127Marchand, H., Desjardins, P., Guillon, S., Paultre, J.-E., Bougrioua, Z., Yip, R.Y.F., Masut, R.A. (1997). Metalorganic Vapor Phase Epitaxial Growth and Structural Characterization of Self-Assembled InAs Nanometer-Sized Islands on InP(001). Journal of Electronic Materials, 26(10), p. 1205-1213. 
128Yip, R.Y.F., Aït-Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J.L., Currie, J.F., Masut, R.A. (1997). Strain and Relaxation Effects in InAsP/InP Multiple Quantum Well Optical Modulator Devices Grown by Metalorganic Vapor Phase Epitaxy. Journal of Applied Physics, 81(4), p. 1905-1915. 
129Yip, R.Y.F., Aït-Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J.L., Currie, J.F., Masut, R.A. (1997). Erratum: "Strain and Relaxation Effects in InAsP/InP Multiple Quantum Well Optical Modulator Devices Grown by Metalorganic Vapor Phase Epitaxy" [J. Appl. Phys. 81, 1905 (1997)]. Journal of Applied Physics, 82(12), p. 6372. 
130Ababou, Y., Desjardins, P., Chennouf, A., Leonelli, R., Hetherington, D., Yelon, A., L'Espérance, G., Masut, R.A. (1996). Structural and Optical Characterization of InP Grown on Si(111) by Metalorganic Vapor Phase Epitaxy Using Thermal Cycle Growth. Journal of Applied Physics, 80(9), p. 4997-5005. 
131Ababou, Y., Desjardins, P., Masut, R.A., Yelon, A., L'Espérance, G. (1996). Metalorganic Vapor Phase Epitaxy and Structural Characterization of InP on Si(111). Canadian Journal of Physics, 74(1), p. S108-S111. 
132Abadou, Y., Desjardins, P., Chennouf, A., Leonelli, R., Hetheringtin, A., Yelon, A., L'Espérance, G., Masut, R.A. (1996). Structural and Optical Charact. of InP Grown on Si(111) by Metalorganic Vapor Phase Epitaxy Using Thermal Cycle Growth. Journal of Applied Physics, 80(9), p. 499-505. 
133Beaudoin, M., Bensaada, A., Leonelli, R., Desjardins, P., Masut, R.A., Isnard, L., Chennouf, A., L'Espérance, G. (1996). Self-Consistent Determination of the Band Offsets in InAsxP1-x/InP Strained Layer Quantum Wells and the Bowing Parameter of Bulk InAsxP1-x. Physical Review. B, Condensed Matter, 53(4), p. 1990-1996. 
134Desjardins, P., Beaudoin, M., Leonelli, R., L'Espérance, G., Masut, R.A. (1996). Structural and Optical Properties of Strain-Relaxed InAsP/InP Heterostructures Grown by Metalorganic Vapor Phase Epitaxy on InP(001) Using Tertiarybutylarsine. Journal of Applied Physics, 80(2), p. 846-852. 
135Desjardins, P., Greene, J.E. (1996). Step-Flow Epitaxial-Growth on 2-Domain Surfaces. Journal of Applied Physics, 79(3), p. 1423-1434. 
136Desjardins, P., Greene, J.E. (1996). Step-Flow Epitaxial Growth on Two-Domain Surfaces. Journal of Applied Physics, 79(3), p. 1423-1434. 
137Desjardins, Patrick. (1996). Caractérisation et modélisation de la croissance épitaxiale et de la relaxation des contraintes dans les hétérostructures semi-conductrices. (Thèse de doctorat, École Polytechnique de Montréal). 273 p.
138Ababou, Y., Desjardins, P., Chennouf, A., Masut, R.A., Yelon, A., Leonelli, R., L'Espérance, G. (1995). Growth of Strain-Balanced GaInP/InAsP MQW by LP-MOVPE. Sixth European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Techniques.
139Beaudoin, M., Masut, R.A., Isnard, L., Desjardins, P., Bensaada, A., L'Espérance, G., Leonelli, R. (1995). Band Offsets of InAsxP1-x/InP Strained Layer Quantum Wells Grown by LP-MOVPE Using TBAs. Microcrystalline and Nanocrystalline Semiconductors : Symposium F of the 1994 Fall Meeting of the Materials Research Society, p. 1005-1010. 
140Bensaada, A., Suys, M., Beaudoin, M., Desjardins, P., Isnard, L., Masut, R.A., Cochrane, R.W., Currie, J.F., L'Espérance, G. (1995). LP-MOVPE Growth and Characterization of InxGa1-XAs/InP Epilayers and Multiple Quantum Wells Using Tertiarybutylarsine. Sixth European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques.
141Evoy, S., Bernier, M.-H., Desjardins, P., Izquierdo, R., Meunier, M., Sacher, E. (1994). Diode Laser-Induced Pyrolitic Decomposition of Spin-Coated Organometallic Thin Films. Laser-Assisted Fabrication of Thin Films and Microstructures, p. 63-70. 
142Meunier M., Desjardins P., Izquierdo R., Tabbal M., Suys M. (1994). Excimer Laser for in Situ Processing in Microelectronics. Excimer Lasers : The Tools, Fundamentals of Their Interactions With Matter, Field of Applications. Dordrecht: Kluwer Academic Publishers. p. 319-338.

 

© École Polytechnique de Montréal
Bottin | Plan du site | Recherche | Conditions