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Oussama Moutanabbir
Ph.D. INRS Énergie et Matériaux
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Associate Professor
Department of Engineering Physics
Phone: (514) 340-4711 Ext. 2587 Fax: (514) 340-3218 Room: J-4063
Areas of expertise
Condensed matter physics Surfaces, interfaces and thin films Electronic materials and components Semiconductor fabrication and packaging Physics Experimental methods and instrumentation Electronic properties of solids Semiconductors Microelectronics Energy conversion and distribution Photonic devices and networks
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Research interests and affiliations

Research interests

Our research is interdisciplinary encompassing fundamental scientific and technological activities in nanoscience and nanotechnology with focus on materials physics and engineering. The primary objective of our activities has been the development of processes for controlled nanoscale fabrication and manipulation of integrative and flexible semiconductor systems with actual or potential impact on electronics, photonics, optoelectronics, environmentally friendly energy conversion, and bio-integrated technologies. Particularly, we have been developing and employing unique combinations of nanofabrication and integration tools to enable a variety of novel complex and nanostructured materials thereby generating building blocks for scalable, high-performance, and multifunctional devices. For more details, visit our web page: http://www.polymtl.ca/nhl/en/

Affiliation(s)
Expertise type(s) (NSERC subjects)
  • 2000 MATERIALS SCIENCE AND TECHNOLOGY
  • 2002 Materials processing/fabrication
  • 2009 Semiconductors
  • 2010 Thin films/interfaces
  • 2014 Crystals
  • 3300 CONDENSED MATTERPHYSICS
  • 3303 Surfaces, interfaces and thin films
  • 3402 Surface and interfacial chemistry
  • 3407 Crystallography - physical chemistry

Publications

Recent publications
Journal article
Mukherjee, S., Nateghi, N., Jacobberger, R.M., Bouthillier, E., de la Mata, M., Arbiol, J., Coenen, T., Cardinal, D., Levesque, P., Desjardins, P., Martel, R., Arnold, M.S. & Moutanabbir, O. (2018). Growth and luminescence of polytypic InP on epitaxial graphene. Advanced Functional Materials, 28(8). Retrieved from https://doi.org/10.1002/adfm.201705592
Journal article
Jung, D., Faucher, J., Mukherjee, S., Akey, A., Ironside, D.J., Cabral, M., Sang, X., Lebeau, J., Bank, S.R., Buonassisi, T., Moutanabbir, O. & Lee, M.L. (2017). Highly tensile-strained Ge/InAlAs nanocomposites. Nature Communications, 8, 7 pages. Retrieved from https://doi.org/10.1038/ncomms14204
Journal article
Mukherjee, S., Kodali, N., Isheim, D., Wirths, S., Hartmann, J.M., Buca, D., Seidman, D.N. & Moutanabbir, O. (2017). Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors. Physical Review B, 95(16), 5 pages. Retrieved from https://doi.org/10.1103/PhysRevB.95.161402
Journal article
Fortin-Deschenes, M., Waller, O., Mentes, T.O., Locatelli, A., Mukherjee, S., Genuzio, F., Levesque, P.L., Hebert, A., Martel, R. & Moutanabbir, O. (2017). Synthesis of antimonene on germanium. Nano Letters, 17(8), 4970-4975. Retrieved from https://doi.org/10.1021/acs.nanolett.7b02111
See all publications (33)

Teaching

PHS2109: Cristallographie

PHS8302: Dispositifs Électroniques

PHS6910: Séminaires de Génie Physique

PHS2108: Mécanique Quantique I

PHS2114: Science et Génie des Matériaux

Supervision at Polytechnique

IN PROGRESS

  • Post-doctoral fellowship (6)

    • Mukherjee, Samik. Growth and characterization of group IV semiconductor quantum structures.
    • Jendi, Zeina. Modeling of semiconductor structures and devices for energy applications.
    • Bayram, Sirine. Metal-free plasmonics.
    • Waller, Olga. Growth and in situ Characterization of New 2D Materials.
    • Assali, Simone. Group IV Infrared Materials and Devices.
    • Phan, Duy-Thach. 2D materials and sensors.

  • Ph.D. (3)

    • Chagnon, Dany. Stability of materials in wafer-level hermetic packaging and 3D integration of IR cameras.
    • Nicolas, Jérôme. Growth of SiGeSn and GeSn materials and optoelectronic device structures.
    • Fortin-Deschênes, Matthieu. Epitaxial growth and in situ studies of group V 2D materials.

  • Master (thesis) (2)

    • Bouthiller, Étienne. Modeling and fabrication of SiGeSn nanowire-based optoelectronic devices.
    • Attiaoui, Anis. Band structure and phonons properties in SiGeSn nanowires.

COMPLETED

  • Ph.D. Thesis (1)

    • Mukherjee, S. (2017). Isotope Engineering and Lattice Disorder in Group IV Nanoscale and Quantum Semiconductors (Ph.D. Thesis, École Polytechnique de Montréal). Retrieved from http://publications.polymtl.ca/2678/

  • Master's Thesis (2)

    • Abboud, Z. (2016). In situ studies of volatile molecules trapping in zirconium alloy-based non-evaporable getter (Master's Thesis, École Polytechnique de Montréal). Retrieved from http://publications.polymtl.ca/2382/
    • Fournier-Lupien, J.-H. (2015). Les alliages germanium-étain et silicium-germanium-étain: croissance, propriétés structurales et stabilité thermique (Master's Thesis, École Polytechnique de Montréal). Retrieved from http://publications.polymtl.ca/1894/

Awards and honors

News about Oussama Moutanabbir

NEWS | February 15, 2017
Projects led by three Polytechnique Montréal professors awarded NSERC Strategic Partnership Grants | Read