Assali, S., Attiaoui, A., Vecchio, P.D., Mukherjee, S., Nicolas, J. & Moutanabbir, O. (2022). A Light-Hole Germanium Quantum Well on Silicon. Advanced Materials, 34(27), 11 pages. Tiré de https://doi.org/10.1002/adma.202201192
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Moutanabbir, Oussama

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Moutanabbir, Oussama
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Oussama Moutanabbir (125)
- Articles de revue (81)
- 2022
Article de revue Article de revue Burt, D., Joo, H.-J., Kim, Y., Jung, Y., Chen, M., Luo, M., Kang, D.-H., Assali, S., Zhang, L., Son, B., Fan, W., Moutanabbir, O., Ikonic, Z., Tan, C.S., Huang, Y.-C. & Nam, D. (2022). Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain. Applied Physics Letters, 120(20), 7 pages. Tiré de https://doi.org/10.1063/5.0087477Article de revue Attiaoui, A., Fettu, G., Mukherjee, S., Bauer, M. & Moutanabbir, O. (2022). Electronic signature of subnanometer interfacial broadening in heterostructures. Nano Letters, 22(17), 7080-7086. Tiré de https://doi.org/10.1021/acs.nanolett.2c02042Article de revue Badawy, G., Zhang, B., Rauch, T., Momand, J., Koelling, S., Jung, J., Gazibegovic, S., Moutanabbir, O., Kooi, B.J., Botti, S., Verheijen, M.A., Frolov, S.M. & Bakkers, E.P.A.M. (2022). Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires. Advanced Science, 8 pages. Tiré de https://doi.org/10.1002/advs.202105722Article de revue Kim, Y., Assali, S., Burt, D., Jung, Y., Joo, H.-J., Chen, M., Ikonic, Z., Moutanabbir, O. & Nam, D. (2022). Enhanced GeSn Microdisk Lasers Directly Released on Si. Advanced Optical Materials, 10(2), 7 pages. Tiré de https://doi.org/10.1002/adom.202101213Article de revue Luo, L., Assali, S., Atalla, M.R.M., Koelling, S., Attiaoui, A., Daligou, G., Martí, S., Arbiol, J. & Moutanabbir, O. (2022). Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires. ACS Photonics, 9(3), 914-921. Tiré de https://doi.org/10.1021/acsphotonics.1c01728Article de revue Carnio, B.N., Attiaoui, A., Assali, S., Moutanabbir, O. & Elezzabi, A.Y. (2022). Extracting the complex refractive index of an ultrathin layer at terahertz frequencies with no prior knowledge of substrate absorption loss. IEEE Transactions on Terahertz Science and Technology, 12(4), 385-391. Tiré de https://doi.org/10.1109/TTHZ.2021.3140196Article de revue Singh, S., Mukherjee, S., Mukherjee, S., Assali, S., Luo, L., Das, S., Moutanabbir, O. & Ray, S.K. (2022). Ge-Ge0.92Sn0.08 core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication. Applied Physics Letters, 120(17). Tiré de https://doi.org/10.1063/5.0087379Article de revue Schellingerhout, S.G., de Jong, E.J., Gomanko, M., Guan, X., Jiang, Y., Hoskam, M.S.M., Jung, J., Koelling, S., Moutanabbir, O., Verheijen, M.A., Frolov, S.M. & Bakkers, E.P.A.M. (2022). Growth of PbTe nanowires by molecular beam epitaxy. Materials for Quantum Technology, 2(1). Tiré de https://doi.org/10.1088/2633-4356/ac4fbaArticle de revue Atalla, M.R.M., Assali, S., Koelling, S., Attiaoui, A. & Moutanabbir, O. (2022). High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response. ACS Photonics, 9(4), 1425-1433. Tiré de https://doi.org/10.1021/acsphotonics.2c00260Article de revue Assali, S., Attiaoui, A., Koelling, S., Atalla, M.R.M., Kumar, A., Nicolas, J., Chowdhury, F.A., Lemieux-Leduc, C. & Moutanabbir, O. (2022). Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics. Journal of Applied Physics, 132(19), 11 pages. Tiré de https://doi.org/10.1063/5.0120505Article de revue Jung, Y., Burt, D., Zhang, L., Kim, Y., Joo, H.-J., Chen, M., Assali, S., Moutanabbir, O., Tan, C.S. & Nam, D. (2022). Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density. Photonics Research, 10(6), 6 pages. Tiré de https://doi.org/10.1364/PRJ.455443Article de revue Assali, S., Koelling, S., Abboud, Z., Nicolas, J., Attiaoui, A. & Moutanabbir, O. (2022). 500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon. Journal of Applied Physics, 132(17), 9 pages. Tiré de https://doi.org/10.1063/5.0119624Article de revue Abdi, S., Assali, S., Atalla, M.R.M., Koelling, S., Warrender, J.M. & Moutanabbir, O. (2022). Recrystallization and interdiffusion processes in laser-annealed strain-relaxed metastable Ge0.89Sn0.11. Journal of Applied Physics, 131(10), 9 pages. Tiré de https://doi.org/10.1063/5.0077331Article de revue Perla, P., Faustmann, A., Kolling, S., Zellekens, P., Deacon, R., Fonseka, H.A., Kolzer, J., Sato, Y., Sanchez, A.M., Moutanabbir, O., Ishibashi, K., Grutzmacher, D., Lepsa, M.I. & Schapers, T. (2022). Te-doped selective-area grown InAs nanowires for superconducting hybrid devices. Physical Review Materials, 6(2), 9 pages. Tiré de https://doi.org/10.1103/PhysRevMaterials.6.024602Article de revue Carnio, B.N., Zawilski, K.T., Schunemann, P.G., Moutanabbir, O. & Elezzabi, A.Y. (2022). The Coming Age of Pnictide and Chalcogenide Ternary Crystals in the Terahertz Frequency Regime. IEEE Transactions on Terahertz Science and Technology, 12(5), 433-445. Tiré de https://doi.org/10.1109/TTHZ.2022.3191840Article de revue Koelling, S., Stehouwer, L.E.A., Paquelet Wuetz, B., Scappucci, G. & Moutanabbir, O. (2022). Three-Dimensional Atomic-Scale Tomography of Buried Semiconductor Heterointerfaces. Advanced Materials Interfaces, 10 pages. Tiré de https://doi.org/10.1002/admi.202201189
- 2021
Article de revue Atalla, M.R.M., Assali, S., Attiaoui, A., Lemieux-Leduc, C., Kumar, A., Abdi, S. & Moutanabbir, O. (2021). All-Group IV Transferable Membrane Mid-Infrared Photodetectors. Advanced Functional Materials, 31(3), 9 pages. Tiré de https://doi.org/10.1002/adfm.202006329Article de revue Mukherjee, S., Assali, S. & Moutanabbir, O. (2021). Atomic Pathways of Solute Segregation in the Vicinity of Nanoscale Defects. Nano Letters, 21(23), 9882-9888. Tiré de https://doi.org/10.1021/acs.nanolett.1c02577Article de revue Groell, L., Attiaoui, A., Assali, S. & Moutanabbir, O. (2021). Combined iodine- and sulfur-based treatments for an effective passivation of GeSn surface. Journal of Physical Chemistry C, 125(17), 9516-9525. Tiré de https://doi.org/10.1021/acs.jpcc.1c01902Article de revue Rathore, J., Nanwani, A., Mukherjee, S., Das, S., Moutanabbir, O. & Mahapatra, S. (2021). Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn. Journal of Physics D: Applied Physics, 54(18), 10 pages. Tiré de https://doi.org/10.1088/1361-6463/abe1e8Article de revue Mukherjee, S., Wajs, M., De la Mata, M., Givan, U., Senz, S., Arbiol, J., Francoeur, S. & Moutanabbir, O. (2021). Disentangling phonon channels in nanoscale heat transport. Physical Review B, 104(7), 7 pages. Tiré de https://doi.org/10.1103/PhysRevB.104.075429Article de revue Joo, H.-J., Kim, Y., Burt, D., Jung, Y., Zhang, L., Chen, M., Parluhutan, S.J., Kang, D.-H., Lee, C., Assali, S., Ikonic, Z., Moutanabbir, O., Cho, Y.-H., Tan, C.S. & Nam, D. (2021). 1D photonic crystal direct bandgap GeSn-on-insulator laser. Applied Physics Letters, 119(20), 6 pages. Tiré de https://doi.org/10.1063/5.0066935Article de revue Attiaoui, A., Bouthillier, E., Daligou, G., Kumar, A., Assali, S. & Moutanabbir, O. (2021). Extended Short-Wave Infrared Absorption in Group-IV Nanowire Arrays. Physical Review Applied, 15(1), 11 pages. Tiré de https://doi.org/10.1103/PhysRevApplied.15.014034Article de revue Assali, S., Dijkstra, A., Attiaoui, A., Bouthillier, E., Haverkort, J.E.M. & Moutanabbir, O. (2021). Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge1-xSnx Semiconductors. Physical Review Applied, 15(2), 13 pages. Tiré de https://doi.org/10.1103/PhysRevApplied.15.024031Article de revue An, Q., Moutanabbir, O. & Guo, H. (2021). Moire patterns of twisted bilayer antimonene and their structural and electronic transition. Nanoscale, 132(31), 13427-13436. Tiré de https://doi.org/10.1039/d1nr02843jArticle de revue Moutanabbir, O., Assali, S., Gong, X., O'Reilly, E., Broderick, C.A., Marzban, B., Witzens, J., Du, W., Yu, S.Q., Chelnokov, A., Buca, D. & Nam, D. (2021). Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors. Applied Physics Letters, 118(11), 10 pages. Tiré de https://doi.org/10.1063/5.0043511
- 2020
Article de revue Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M. & De Seta, M. (2020). Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering. Physical Review Applied, 13(4), 14 pages. Tiré de https://doi.org/10.1103/PhysRevApplied.13.044062Article de revue Mukherjee, S., Attiaoui, A., Bauer, M. & Moutanabbir, O. (2020). 3D Atomic Mapping of Interfacial Roughness and Its Spatial Correlation Length in Sub-10 nm Superlattices. ACS Applied Materials and Interfaces, 12(1), 1728-1736. Tiré de https://doi.org/10.1021/acsami.9b13802Article de revue Bouthillier, É., Assali, S., Nicolas, J. & Moutanabbir, O. (2020). Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors. Semiconductor Science and Technology, 35(9), 9 pages. Tiré de https://doi.org/10.1088/1361-6641/ab9846Article de revue Nicolas, J., Assali, S., Mukherjee, S., Lotnyk, A. & Moutanabbir, O. (2020). Dislocation Pipe Diffusion and Solute Segregation during the Growth of Metastable GeSn. Crystal Growth and Design, 20(5), 3493-3498. Tiré de https://doi.org/10.1021/acs.cgd.0c00270Article de revue An, Q., Fortin-Deschênes, M., Yu, G., Moutanabbir, O. & Guo, H. (2020). Effects of short-range order and interfacial interactions on the electronic structure of two-dimensional antimony-arsenic alloys. Journal of Applied Physics, 127(2), 12 pages. Tiré de https://doi.org/10.1063/1.5131262Article de revue Fettu, G., Attiaoui, A., Samik, M., Bauer, M. & Moutanabbir, O. (2020). Electronic and Optical Properties of Short-Period Si/Sige Superlattices: Effects of Interfacial Atomic-Scale Roughness. ECS Meeting Abstracts, MA2020-01(G01 : Silicon compatible emerging materials, processes and technologies for advanced CMOS and post-CMOS applications 10), 1305-1305. Tiré de https://doi.org/10.1149/ma2020-01221305mtgabsArticle de revue Persichetti, L., Montanari, M., Ciano, C., Di Gaspare, L., Ortolani, M., Baldassarre, L., Zoellner, M., Mukherjee, S., Moutanabbir, O., Capellini, G., Virgilio, M. & De Seta, M. (2020). Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells. Crystals, 10(3), 13 pages. Tiré de https://doi.org/10.3390/cryst10030179Article de revue Fortin-Deschenes, M., Zschiesche, H., Mente, T.O., Locatelli, A., Jacobberger, R.M., Genuzio, F., Lagos, M.J., Biswas, D., Jozwiak, C., Miwa, J.A., Ulstrup, S., Bostwick, A., Rotenberg, E., Arnold, M.S., Botton, G.A. & Moutanabbir, O. (2020). Pnictogens allotropy and phase transformation during van der waals growth. Nano Letters, 20(11), 8258-8266. Tiré de https://doi.org/10.1021/acs.nanolett.0c03372Article de revue von den Driesch, N., Wirths, S., Troitsch, R., Mussler, G., Breuer, U., Moutanabbir, O., Grutzmacher, D. & Buca, D. (2020). Thermally activated diffusion and lattice relaxation in (Si)GeSn materials. Physical Review Materials, 4(3), 6 pages. Tiré de https://doi.org/10.1103/PhysRevMaterials.4.033604Article de revue Nateghi, N., Samik, M., Cardinal, D., Jacobberger, R.M., Way, A.J., de la Mata, M., Martel, R., Desjardins, P., Arbiol, J., Arnold, M.S. & Moutanabbir, O. (2020). Van Der Waals Growth of III-V Semiconductors on Graphene. ECS Meeting Abstracts, MA2020-01(B06 : 2D Layered Materials from Fundamental Science to Applications). Tiré de https://doi.org/10.1149/MA2020-0110835mtgabsArticle de revue Del Vecchio, P., Lodari, M., Sammak, A., Scappucci, G. & Moutanabbir, O. (2020). Vanishing Zeeman energy in a two-dimensional hole gas. Physical Review B, 102(11), 12 pages. Tiré de https://doi.org/10.1103/PhysRevB.102.115304
- 2019
Article de revue Jacobberger, R.M., Murray, E.A., Fortin-Deschênes, M., Göltl, F., Behn, W.A., Krebs, Z.J., Levesque, P.L., Savage, D.E., Smoot, C., Lagally, M.G., Desjardins, P., Martel, R., Brar, V., Moutanabbir, O., Mavrikakis, M. & Arnold, M.S. (2019). Alignment of semiconducting graphene nanoribbons on vicinal Ge(001). Nanoscale, 11(11), 4864-4875. Tiré de https://doi.org/10.1039/C9NR00713JArticle de revue Fortin-Deschênes, M., Waller, O., An, Q., Lagos, M.J., Botton, G.A., Guo, H. & Moutanabbir, O. (2019). 2D Antimony–Arsenic Alloys. Small, 16(3), 7 pages. Tiré de https://doi.org/10.1002/smll.201906540Article de revue Fortin-Deschênes, M., Jacobberger, R.M., Deslauriers, C.-A., Waller, O., Bouthillier, É., Arnold, M.S. & Moutanabbir, O. (2019). Dynamics of Antimonene-Graphene Van Der Waals Growth. Advanced Materials, 31(21), 7 pages. Tiré de https://doi.org/10.1002/adma.201900569Article de revue Assali, S., Nicolas, J. & Moutanabbir, O. (2019). Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation. Journal of Applied Physics, 125(2). Tiré de https://doi.org/10.1063/1.5050273Article de revue Ciano, C., Di Gaspare, L., Montanari, M., Persichetti, L., Baldassarre, L., Ortolani, M., Capellini, G., Skibitzki, O., Zöllner, M., Faist, J., Scalari, G., Stark, D., Paul, D.J., Rew, K., Moutanabbir, O., Mukherjee, S., Grange, T., Birner, S., Virgilio, M. & De Seta, M. (2019). n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser. ECS Transactions, 93(1), 63-66. Tiré de https://doi.org/10.1149/09301.0063ecstArticle de revue Assali, S., Elsayed, M., Nicolas, J., Liedke, M.O., Wagner, A., Butterling, M., Krause-Rehberg, R. & Moutanabbir, O. (2019). Vacancy complexes in nonequilibrium germanium-tin semiconductors. Applied Physics Letters, 114(25), 6 pages. Tiré de https://doi.org/10.1063/1.5108878
- 2018
Article de revue Assali, S., Nicolas, J., Mukherjee, S., Dijkstra, A. & Moutanabbir, O. (2018). Atomically uniform Sn-rich GeSn semiconductors with 3.0-3.5 µm room-temperature optical emission. Applied Physics Letters, 112(25), 5 pages. Tiré de https://doi.org/10.1063/1.5038644Article de revue Mamun, M.A., Tapily, K., Moutanabbir, O., Baumgart, H. & Elmustafa, A.A. (2018). Effect of hydrogen implantation on the mechanical properties of AlN throughout ion-induced splitting. ECS Journal of Solid State Science and Technology, 7(4), P180-P184. Tiré de https://doi.org/10.1149/2.0131804jssArticle de revue Attiaoui, A., Wirth, S., Blanchard-Dionne, A.-P., Meunier, M., Hartmann, J.M., Buca, D. & Moutanabbir, O. (2018). Extreme IR absorption in group IV-SiGeSn core-shell nanowires. Journal of Applied Physics, 123(22), 13 pages. Tiré de https://doi.org/10.1063/1.5021393Article de revue Mukherjee, S., Assali, S. & Moutanabbir, O. (2018). Group IV nanowires for carbon-free energy conversion. Semiconductors and Semimetals, 98, 151-229. Tiré de https://doi.org/10.1016/bs.semsem.2018.02.003Article de revue Mukherjee, S., Nateghi, N., Jacobberger, R.M., Bouthillier, E., de la Mata, M., Arbiol, J., Coenen, T., Cardinal, D., Levesque, P., Desjardins, P., Martel, R., Arnold, M.S. & Moutanabbir, O. (2018). Growth and luminescence of polytypic InP on epitaxial graphene. Advanced Functional Materials, 28(8). Tiré de https://doi.org/10.1002/adfm.201705592Article de revue Fortin-Deschenes, M. & Moutanabbir, O. (2018). Recovering the semiconductor properties of the epitaxial group V 2D materials antimonene and arsenene. Journal of Physical Chemistry C, 122(16), 9162-9168. Tiré de https://doi.org/10.1021/acs.jpcc.8b00044Article de revue Mukherjee, S., Givan, U., Senz, S., De la Mata, M., Arbiol, J. & Moutanabbir, O. (2018). Reduction of thermal conductivity in nanowires by combined engineering of crystal phase and isotope disorder. Nano Letters, 18(5), 3066-3075. Tiré de https://doi.org/10.1021/acs.nanolett.8b00612Article de revue Sahamir, S.R., Said, S.M., Sabri, M.F.M., Mahmood, M.S., Bin Kamarudin, M.A. & Moutanabbir, O. (2018). Studies on relation between columnar order and electrical conductivity in HAT6 discotic liquid crystals using temperature-dependent Raman spectroscopy and DFT calculations. Liquid Crystals, 45(4), 522-535. Tiré de https://doi.org/10.1080/02678292.2017.1359693Article de revue Assali, S., Attiaoui, A., Mukherjee, S., Nicolas, J. & Moutanabbir, O. (2018). TEOS layers for low temperature processing of group IV optoelectronic devices. Journal of Vacuum Science & Technology B, 36(6), 8 pages. Tiré de https://doi.org/10.1116/1.5047909
- 2017
Article de revue Jung, D., Faucher, J., Mukherjee, S., Akey, A., Ironside, D.J., Cabral, M., Sang, X., Lebeau, J., Bank, S.R., Buonassisi, T., Moutanabbir, O. & Lee, M.L. (2017). Highly tensile-strained Ge/InAlAs nanocomposites. Nature Communications, 8, 7 pages. Tiré de https://doi.org/10.1038/ncomms14204Article de revue Mukherjee, S., Kodali, N., Isheim, D., Wirths, S., Hartmann, J.M., Buca, D., Seidman, D.N. & Moutanabbir, O. (2017). Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors. Physical Review B, 95(16), 5 pages. Tiré de https://doi.org/10.1103/PhysRevB.95.161402Article de revue Fortin-Deschenes, M., Waller, O., Mentes, T.O., Locatelli, A., Mukherjee, S., Genuzio, F., Levesque, P.L., Hebert, A., Martel, R. & Moutanabbir, O. (2017). Synthesis of antimonene on germanium. Nano Letters, 17(8), 4970-4975. Tiré de https://doi.org/10.1021/acs.nanolett.7b02111Article de revue Abboud, Z. & Moutanabbir, O. (2017). Temperature-dependent in situ studies of volatile molecule trapping in low temperature-activated Zr alloy-based getters. Journal of Physical Chemistry C, 121(6), 3381-3396. Tiré de https://doi.org/10.1021/acs.jpcc.6b11426
- 2016
Article de revue Fortin-Deschenes, M., Levesque, P.L., Martel, R. & Moutanabbir, O. (2016). Dynamics and mechanisms of exfoliated black phosphorus sublimation. Journal of Physical Chemistry Letters, 7(9), 1667-1674. Tiré de https://doi.org/10.1021/acs.jpclett.6b00584Article de revue Moutanabbir, O., Isheim, D., Zugang, M. & Seidman, D.N. (2016). Evidence of sub-10 nm aluminum-oxygen precipitates in silicon. Nanotechnology, 27(20), 7 pages. Tiré de https://doi.org/10.1088/0957-4484/27/20/205706Article de revue Mukherjee, S., Watanabe, H., Isheim, D., Seidman, D.N. & Moutanabbir, O. (2016). Laser-assisted field evaporation and three-dimensional atom-by-atom mapping of diamond isotopic homojunctions. Nano Letters, 16(2), 1335-1344. Tiré de https://doi.org/10.1021/acs.nanolett.5b04728Article de revue Mukherjee, S., Isheim, D., Seidman, D.N. & Moutanabbir, O. (2016). Mapping isotopes in nanoscale and quantum materials using atom probe tomography. Microscopy and Microanalysis, 22(S3), 652-653. Tiré de https://doi.org/10.1017/S1431927616004116Article de revue Chagnon, D., Pippel, E., Senz, S. & Moutanabbir, O. (2016). Metal Seed Loss Throughout the Nanowire Growth: Bulk Trapping and Surface Mass Transport. Journal of Physical Chemistry C, 120(5), 2932-2940. Tiré de https://doi.org/10.1021/acs.jpcc.5b07361
- 2015
Article de revue Fournier-Lupien, J.H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J.M., Desjardins, P., Buca, D. & Moutanabbir, O. (2015). Erratum: Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 106(17). Tiré de https://doi.org/10.1063/1.4919130Article de revue Mukherjee, S., Givan, U., Senz, S., Bergeron, A., Francoeur, S., De La Mata, M., Arbiol, J., Sekiguchi, T., Itoh, K.M., Isheim, D., Seidman, D.N. & Moutanabbir, O. (2015). Phonon Engineering in Isotopically Disordered Silicon Nanowires. Nano Letters, 15(6), 3885-3893. Tiré de https://doi.org/10.1021/acs.nanolett.5b00708Article de revue Scheerschmidt, K. & Moutanabbir, O. (2015). Tracking atomic processes throughout the formation of heteroepitaxial interfaces. Crystal Research and Technology, 50(6), 490-498. Tiré de https://doi.org/10.1002/crat.201500061
- 2014
Article de revue Xiong, G., Moutanabbir, O., Reiche, M., Harder, R. & Robinson, I. (2014). Coherent X-ray diffraction imaging and characterization of strain in silicon-on-insulator nanostructures. Advanced Materials, 26(46), 7747-7763. Tiré de https://doi.org/10.1002/adma.201304511Article de revue Balois, M.V., Hayazawa, N., Tarun, A., Kawata, S., Reiche, M. & Moutanabbir, O. (2014). Direct optical mapping of anisotropic stresses in nanowires using transverse optical phonon splitting. Nano Letters, 14(7), 3793-3798. Tiré de https://doi.org/10.1021/nl500891fArticle de revue Dadwal, U., Kumar, P., Moutanabbir, O., Reiche, M. & Singh, R. (2014). Effect of implantation temperature on the H-induced microstructural damage in AlN. Journal of Alloys and Compounds, 588, 300-304. Tiré de https://doi.org/10.1016/j.jallcom.2013.10.227Article de revue Attiaoui, A. & Moutanabbir, O. (2014). Indirect-to-direct band gap transition in relaxed and strained Ge 1-x-ySixSny ternary alloys. Journal of Applied Physics, 116(6). Tiré de https://doi.org/10.1063/1.4889926Article de revue Lee, S.-M., Pippel, E., Moutanabbir, O., Kim, J.-H., Lee, H.-J. & Knez, M. (2014). In Situ Raman Spectroscopic Study of Al-Infiltrated Spider Dragline Silk under Tensile Deformation. ACS Applied Materials & Interfaces, 6(19), 16827-16834. Tiré de https://doi.org/10.1021/am5041797Article de revue Blumtritt, H., Isheim, D., Senz, S., Seidman, D.N. & Moutanabbir, O. (2014). Preparation of nanowire specimens for laser-assisted atom probe tomography. Nanotechnology, 25(43). Tiré de https://doi.org/10.1088/0957-4484/25/43/435704Article de revue Chen, P., Zhang, J.J., Feser, J.P., Pezzoli, F., Moutanabbir, O., Cecchi, S., Isella, G., Gemming, T., Baunack, S., Chen, G., Schmidt, O.G. & Rastelli, A. (2014). Thermal transport through short-period SiGe nanodot superlattices. Journal of Applied Physics, 115(4). Tiré de https://doi.org/10.1063/1.4863115
- 2013
Article de revue Moutanabbir, O., Isheim, D., Blumtritt, H., Senz, S., Pippel, E. & Seidman, D.N. (2013). Colossal injection of catalyst atoms into silicon nanowires. Nature, 496(7443), 78-82. Tiré de https://doi.org/10.1038/nature11999Article de revue Essig, S., Moutanabbir, O., Wekkeli, A., Nahme, H., Oliva, E., Bett, A.W. & Dimroth, F. (2013). Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity. Journal of Applied Physics, 113(20). Tiré de https://doi.org/10.1063/1.4807905Article de revue Fournier-Lupien, J.-H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J.M., Desjardins, P., Buca, D. & Moutanabbir, O. (2013). Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 103(26). Tiré de https://doi.org/10.1063/1.4855436Article de revue Tarun, A., Hayazawa, N., Balois, M.V., Kawata, S., Reiche, M. & Moutanabbir, O. (2013). Stress redistribution in individual ultrathin strained silicon nanowires: A high-resolution polarized Raman study. New Journal of Physics, 15(5). Tiré de https://doi.org/10.1088/1367-2630/15/5/053042
- 2012
Article de revue Qin, Y., Vogelgesang, R., Eßlinger, M., Sigle, W., Van Aken, P., Moutanabbir, O. & Knez, M. (2012). Bottom-up tailoring of plasmonic nanopeapods making use of the periodical topography of carbon nanocoil templates. Advanced Functional Materials, 22(24), 5157-5165. Tiré de https://doi.org/10.1002/adfm.201201791Article de revue Moutanabbir, O., Ratto, F., Heun, S., Scheerschmidt, K., Locatelli, A. & Rosei, F. (2012). Dynamic Probe of Atom Exchange During Monolayer Growth. Physical Review B, 85(20). Tiré de https://doi.org/10.1103/PhysRevB.85.201416Article de revue Tong, X., Qin, Y., Guo, X., Moutanabbir, O., Ao, X., Pippel, E., Zhang, L. & Knez, M. (2012). Enhanced catalytic activity for methanol electro-oxidation of uniformly dispersed nickel oxide nanoparticles-carbon nanotube hybrid materials. Small, 8(22), 3390-3395. Tiré de https://doi.org/10.1002/smll.201200839Article de revue Hahnel, A., Reiche, M., Moutanabbir, O., Blumtritt, H., Geisler, H., Hontschel, J. & Engelmann, H.-J. (2012). Improving accuracy and precision of strain analysis by energy-filtered nanobeam electron diffraction. Microscopy and Microanalysis, 18(1), 229-40. Tiré de https://doi.org/10.1017/S1431927611012657
- 2011
Article de revue Tarun, A., Hayazawa, N., Ishitobi, H., Kawata, S., Reiche, M. & Moutanabbir, O. (2011). Mapping the "forbidden" transverse-optical phonon in single strained silicon (100) nanowire. Nano Letters, 11(11), 4780-4788. Tiré de https://doi.org/10.1021/nl202599q
- 2022
- Communications de conférence (43)
- 2022
Communication de conférence Joo, H.-J., Kim, Y., Burt, D., Yung, Y., Zhang, L., Chen, M., Parluhutan, S.J., Kang, D.-H., Lee, C., Assali, S., Ikonic, Z., Moutanabbir, O., Cho, Y.-H., Tan, C.S. & Nam, D. (2022). 1D photonic crystal GeSn-on-insulator nanobeam laser. Communication présentée à Silicon Photonics XVII, San Francisco, CA, USA (9 pages). Tiré de https://doi.org/10.1117/12.2608589Communication de conférence Del Vecchio, P. & Moutanabbir, O. (2022). Electric-dipole spin resonance for light-holes in germanium quantum wel. Communication présentée à 2022 APS March Meeting, Chicago, Illinois.Communication de conférence Carnio, B.N., Attiaoui, A., Assali, S., Moutanabbir, O. & Elezzabi, A.Y. (2022). Extracting the linear terahertz properties of thin films using complementary transmission and reflection measurements: Applied to GeSn thin films. Communication présentée à International Conference on Ultrafast Phenomena (UP) 2022, Montreal, Quebec. Tiré de https://doi.org/10.1364/UP.2022.W4A.19Communication de conférence Attiaoui, A., Assali, S., Luo, L., Daligou, G., Atala, M., Koelling, S. & Moutanabbir, O. (2022). Group-IV GeSn nanophotonics. Communication présentée à IEEE Photonics Society Summer Topicals Meeting Series (SUM 2022), Cabo San Lucas, Mexico (2 pages). Tiré de https://doi.org/10.1109/SUM53465.2022.9858265Communication de conférence Kim, Y., Assali, S., Burt, D., Jung, Y., Joo, H.-J., Chen, M., Ikonic, Z., Moutanabbir, O. & Nam, D. (2022). Improved GeSn microdisk lasers directly sitting on Si. Communication présentée à Silicon Photonics XVII, San Francisco, CA, USA (7 pages). Tiré de https://doi.org/10.1117/12.2610599Communication de conférence Losert, M.P., Wuetz, B.P., Koelling, S., Stehouwer, L., Zwerver, A.-M.J., Philips, S.G., Madzik, M.G., Xue, X., Zheng, G., Lodari, M., Amitonov, S.V., Samkharadze, N., Sammak, A., Vanderspyen, L., Rahman, R., Coppersmith, S.N., Moutanabbir, O., Friesen, M.G. & Scappucci, G. (2022). Increasing the valley splitting in Si/SiGe heterostructures by exploiting atomic concentration fluctuations. Communication présentée à 2022 APS March Meeting, Chicago, Illinois. Tiré de https://meetings.aps.org/Meeting/MAR22/Session/D39.4Communication de conférence Chen, M., Jung, Y., Burt, D., Kim, Y., Joo, H.-J., Zhang, L., Assali, S., Moutanabbir, O., Tan, C.S. & Nam, D. (2022). Low-Threshold Lasing in GeSnOI Microdisk Lasers with Reduced Defect Density. Communication présentée à Conference on Lasers and Electro-Optics (CLEO 2022), San José, CA, USA (2 pages).Communication de conférence Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M. & De Seta, M. (2022). Microscopic modeling of interface roughness scattering and application to the simulation of quantum cascade lasers. Communication présentée à International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2022), Turin, Italy (p. 51-52). Tiré de https://doi.org/10.1109/NUSOD54938.2022.9894753Communication de conférence Atalla, M., Assali, S., Koelling, S., Daligou, G., Attiaoui, A., Luo, L., Lemieux-Leduc, C., Abdi, S. & Moutanabbir, O. (2022). Mid-infrared silicon-integrated high-bandwidth GeSn PIN photodetectors and LEDs. Communication présentée à Conference on Lasers and Electro-Optics (CLEO 2022), San José, CA, USA (2 pages).Communication de conférence Daligou, G., Assali, S., Attiaoui, A., Bouthillier, É. & Moutanabbir, O. (2022). Radiative carrier lifetime in GeSn mid-infrared emitters. Communication présentée à IEEE Photonics Society Summer Topicals Meeting Series (SUM 2022), Cabo San Lucas, Mexico (2 pages). Tiré de https://doi.org/10.1109/SUM53465.2022.9858226Communication de conférence Burt, D., Jooa, H.-J., Kim, Y., Jung, Y., Chen, M., Luo, M., Kang, D.-H., Assali, S., Zhang, L., Son, B., Fan, W., Moutanabbir, O., Ikonic, Z., Tan, C.S., Huang, Y.-C. & Nam, D. (2022). Tensile-strained direct bandgap GeSnOI micro/nanostructures by harnessing residual strain. Communication présentée à Silicon Photonics XVII. Tiré de https://doi.org/10.1117/12.2608742
- 2021
Communication de conférence Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., De Seta, M., Belyanin, A.A. & Smowton, P.M. (2021). Atomic-scale modeling of interface roughness scattering in quantum cascade lasers. Communication présentée à Novel In-Plane Semiconductor Lasers XX. Tiré de https://doi.org/10.1117/12.2585205Communication de conférence Atalla, M.R.M., Assali, S., Attiaoui, A., Lemieux-Leduc, C., Kumar, A., Abdi, S. & Moutanabbir, O. (2021). GeSn membrane mid-infrared photodetectors. Communication présentée à Conference on Lasers and Electro-Optics (CLEO 2021), San José, CA, USA (2 pages). Tiré de https://doi.org/10.1364/cleo_at.2021.atu1t.4Communication de conférence Attiaoui, A., Assali, S., Del-Vecchio, P., Nicolas, J. & Moutanabbir, O. (2021). Tuning Light-Hole Optical Transition in Highly Tensile Strained Germanium Quantum Wells. Communication présentée à Conference on Lasers and Electro-Optics (CLEO 2021), San José, CA, USA (2 pages).
- 2020
Communication de conférence Assali, S., Attiaoui, A., Atalla, M.R.M., Dijkstra, A., Aashish, K., Mukherjee, S., Abdi, S. & Moutanabbir, O. (2020). Epitaxial GeSn and its integration in MIR optoelectronics. Communication présentée à Science and Innovations 2020 (CLEO), Washington, D.C. Tiré de https://doi.org/10.1364/CLEO_SI.2020.SM3M.2Communication de conférence Fortin-Deschênes, M. & Moutanabbir, O. (2020). (Invited) Growth of Van Der Waals Materials: New Insights from Real-Time Studies [Résumé]. Communication présentée à 237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020), Montréal, Canada. (Publié dans ECS Meeting Abstracts, MA2020-01(B06 : 2D Layered Materials from Fundamental Science to Applications)). Tiré de https://doi.org/10.1149/MA2020-0110831mtgabsCommunication de conférence Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G. & Moutanabbir, O. (2020). Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale. Communication présentée à SiGe, Ge, and Related Compounds: Materials, Processing, and Devices (PRiME 2020). (Publié dans ECS Transactions, 98(5), 447-455). Tiré de https://doi.org/10.1149/09805.0447ecst
- 2019
Communication de conférence Persichetti, L., Ciano, C., Virgilio, M., Montanari, M., Di Gaspare, L., Ortolani, M., Baldassarre, L., Zoellner, M., Skibitzki, O., Stark, D., Scalari, G., Faist, J., Rew, K., Paul, D.J., Mukherjee, S., Moutanabbir, O., Scuderi, M., Nicotra, G., Grange, T., Birner, S., Capellini, G., De Seta, M., Congreve, D., Bronstein, H.A., Nielsen, C. & Deschler, F. (2019). Electron state coupling in asymmetric Ge/SiGe quantum wells (Conference Presentation) [Présentation orale]. Présenté à Physical Chemistry of Semiconductor Materials and Interfaces XVIII, San Diego, CA, USA. Tiré de https://doi.org/10.1117/12.2527666Communication de conférence Moutanabbir, O., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Nicolas, J., Mukherjee, S. & Assali, S. (2019). Germanium-tin semiconductors : a versatile silicon-compatible platform. Communication présentée à VII Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Kyoto, Japan. Tiré de https://dc.engconfintl.org/ulsic_tft_vii/36/Communication de conférence Assali, S., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Mukherjee, S., Nicolas, J. & Moutanabbir, O. (2019). Germanium-Tin Semiconductors for Silicon-Compatible Mid-Infrared Photonics. Communication présentée à Conference on Lasers and Electro-Optics, San Jose, California. Tiré de https://doi.org/10.1364/CLEO_SI.2019.STh4O.5Communication de conférence Montanari, M., Ciano, C., Persichetti, L., Gaspare, L.D., Virgilio, M., Capellini, G., Zoellner, M., Skibitzki, O., Stark, D., Scalari, G., Faist, J., Paul, D.J., Grange, T., Birner, S., Scuderi, M., Nicotra, G., Moutanabbir, O., Mukherjee, S., Baldassarre, L., Ortolani, M. & Seta, M.D. (2019). High-Quality n-Type Ge/SiGe Multilayers for THz Quantum Cascade Lasers. Communication présentée à 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019), Paris, France (2 pages). Tiré de https://doi.org/10.1109/IRMMW-THz.2019.8874294Communication de conférence Assali, S., Abdi, S., Atalla, M., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Groell, L., Kumar, A., Luo, L., Mukherjee, S., Nicolas, J. & Moutanabbir, O. (2019). (Si)GeSn Semiconductors for Integrated Optoelectronics, Quantum Electronics, and More [Résumé]. Communication présentée à 236th ECS Meeting, Atlanta, GA. (Publié dans ECS Meeting Abstracts, MA2019-02(25)). Tiré de https://doi.org/10.1149/MA2019-02/25/1162
- 2018
Communication de conférence Mukherjee, S., Bauer, M., Attiaoui, A. & Moutanabbir, O. (2018). Atomistic and Optical Properties of Group IV Ultrathin Superlattices [Résumé]. Communication présentée à AiMES 2018 Meeting, Cancun, Mexico. (Publié dans ECS Meeting Abstracts, MA2018-02(31)). Tiré de https://doi.org/10.1149/MA2018-02/31/1077Communication de conférence Bouthillier, É., Assali, S., Nicolas, J. & Moutanabbir, O. (2018). Decoupling Strain and Composition Effects on Ge1-YSny Lattice Vibrations [Résumé]. Communication présentée à AiMES 2018 Meeting, Cancun, Mexico. (Publié dans ECS Meeting Abstracts, MA2018-02(31)). Tiré de https://doi.org/10.1149/MA2018-02/31/1088Communication de conférence Abboud, Z., Chagnon, D., Assali, S., Fortin-Deschenes, M., Coia, C. & Moutanabbir, O. (2018). Hermetic Wafer-Level Packaging of Microbolometers for Uncooled Thermal Cameras [Résumé]. Communication présentée à AiMES 2018 Meeting, Cancun, Mexico. (Publié dans ECS Meeting Abstracts, MA2018-02(29)). Tiré de https://doi.org/10.1149/MA2018-02/29/976Communication de conférence Moutanabbir, O. & Mukherjee, S. (2018). Isotopically Programmed Group IV Semiconductors: A Versatile Platform for Quantum Technologies [Résumé]. Communication présentée à AiMES 2018 Meeting, Cancun, Mexico. (Publié dans ECS Meeting Abstracts, MA2018-02(31)). Tiré de https://doi.org/10.1149/MA2018-02/31/1083Communication de conférence Attiaoui, A., Assali, S., Nicolas, J. & Moutanabbir, O. (2018). Mapping Strain and Composition Effects on Gesn Band Structure Using Spectroscopic Ellipsometry [Résumé]. Communication présentée à AiMES 2018 Meeting, Cancun, Mexico. (Publié dans ECS Meeting Abstracts, MA2018-02(31)). Tiré de https://doi.org/10.1149/MA2018-02/31/1089Communication de conférence Assali, S., Nicolas, J., Mukherjee, S., Bouthillier, É., Attiaoui, A. & Moutanabbir, O. (2018). Structure and Optoelectronic Properties of Atomically Random Sn-Rich Gesn Semiconductors [Résumé]. Communication présentée à AiMES 2018 Meeting, Cancun, Mexico. (Publié dans ECS Meeting Abstracts, MA2018-02(31)). Tiré de https://doi.org/10.1149/MA2018-02/31/1024
- 2017
Communication de conférence Fortin-Deschênes, M., Waller, O., Hébert, A. & Moutanabbir, O. (2017). Epitaxial group V 2D materials : growth and electronic properties [Affiche]. Présenté à Materials Research Society Spring Meeting & Exhibit (MRS 2017), Phoenix, Arizona.Communication de conférence Chagnon, D., Abboud, Z. & Moutanabbir, O. (2017). In situ monitoring of microstructure and phase changes of AuSn solders for hermetic wafer-level packaging [Affiche]. Présenté à 18th Canadian Semiconductor Science and Technology Conference (CSSTC 2017), Waterloo, Ont. Tiré de http://www.eng.uwaterloo.ca/CSSTC/2017/Abstracts/CSSTC2017.0823.60.pdfCommunication de conférence Mukherjee, S., Nateghi, N., Jacobberger, R., Mata, M., Arbiol, J., Coenen, T., Way, A., Arnold, M. & Moutanabbir, O. (2017). Light emission from InP/graphene hybrid epitaxial structures [Affiche]. Présenté à Materials Research Society Spring Meeting & Exhibit (MRS 2017), Phoenix, Arizona.Communication de conférence Fortin-Deschênes, M., Lévesque, P., Martel, R. & Moutanabbir, O. (2017). Mechanisms and dynamics of two-dimensional black phosphorus sublimation [Affiche]. Présenté à Materials Research Society Spring Meeting & Exhibit (MRS 2017), Phoenix, Arizona.
- 2015
Communication de conférence Mukherjee, S., Attiaoui, A., Watanabe, H., Isheim, D., Seidman, D.N. & Moutanabbir, O. (2015). 3D atom-by-atom mapping of emerging group IV semiconductors [Affiche]. Présenté à 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec.Communication de conférence Collette, M., Moutanabbir, O. & Champagne, A.R. (2015). Electronic transport in silicon nanowires with ordered stacking faults [Affiche]. Présenté à 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec.Communication de conférence Nateghi, N., Mukherjee, S., Choubak, S., Nguyen, M., Lévesque, P., Martel, R., Desjardins, P. & Moutanabbir, O. (2015). Growth of III-V semiconductors on silicon oxide/silicon using graphene interlayer [Affiche]. Présenté à 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec.Communication de conférence Fournier-Lupien, J.-H., Chagnon, D., Lévesque, P., Wirths, S., Pippel, E., Mussler, G., Hartmann, J.M., Mantl, S., Desjardins, P., Buca, D. & Moutanabbir, O. (2015). In situ studies of germanium-tin and silicon-germanium-tin dynamics of phase separation [Affiche]. Présenté à 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec.Communication de conférence Lewis, J.B., Isheim, D., Moutanabbir, O., Floss, C. & Seidman, D.N. (2015). Standardization and correction of artifacts in atom-probe tomographic analysis of Allende nanodiamonds [Résumé]. Communication présentée à 78th Annual Meeting of the Meteoritical Society, Berkeley, Calif. (Publié dans Meteoritics & Planetary Science, 50(S1), 1 page). Tiré de https://onlinelibrary.wiley.com/doi/pdf/10.1111/maps.12501#page=188
- 2014
Communication de conférence Fournier-Lupien, J.H., Chagnon, D., Levesque, P., AlMutairi, A.A., Wirths, S., Pippel, E., Mussler, G., Hartmann, J.M., Mantl, S., Buca, D. & Moutanabbir, O. (2014). In situ studies of germanium-tin and silicon-germanium-tin thermal stability. Communication présentée à 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico (p. 903-911). Tiré de https://doi.org/10.1149/06406.0903ecstCommunication de conférence Chagnon, D., Isik, D., Levesque, P., Lewis, F., Caza, M.-E., Le, X.T., Poirier, J.-S., Michel, D., Larger, R. & Moutanabbir, O. (2014). Metal-assisted hermetic wafer-level packaging. Communication présentée à 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014, Tokyo, Japan (p. 60). Tiré de https://doi.org/10.1109/LTB-3D.2014.6886197Communication de conférence Attiaoui, A. & Moutanabbir, O. (2014). Optical and electronic properties of GeSn and GeSiSn heterostructures and nanowires. Communication présentée à 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico (p. 869-879). Tiré de https://doi.org/10.1149/06406.0869ecst
- 2012
Communication de conférence Baumgart, H. & Moutanabbir, O. (2012). Heterointegration of compound III-V semiconductors by wafer bonding and layer splitting for optoelectronic applications. Communication présentée à 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012, Tokyo, Japan (p. 209). Tiré de https://doi.org/10.1109/LTB-3D.2012.6238092Communication de conférence Wright, C., Mamun, M.A., Tapily, K., Moutanabbir, O., Gu, D., Baumgart, H. & Elmustafa, A.A. (2012). Nanomechanical properties of hydrogen implanted AIN for layer transfer by ion-induced splitting [Affiche]. Présenté à TMS 141st Annual Meeting and Exhibition, Orlando, Fl.Communication de conférence Senichev, A., Givan, U., Moutanabbir, O., Talalaev, V. & Werner, P. (2012). Near-field scanning optical microscopy of infrared emitting semiconductor nanostructures [Affiche]. Présenté à 76th Annual Meeting of the DPG and DPG Spring Meeting, Berlin, Germany.
- 2022
- Chapitres de livre (1)
- 2018
Chapitre de livre Xiong, G., Moutanabbir, O., Reiche, M., Harder, R. & Robinson, I. (2018). Investigating strain in silicon-on-insulator nanostructures by coherent X-ray diffraction. Dans C. Fan & Z. Zhao (édit.), Synchrotron radiation in materials science (p. 239-274). Wiley. Tiré de https://doi.org/10.1002/9783527697106.ch8
- 2018