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Oussama Moutanabbir (125)

  • Articles de revue (81)
    • 2022
      • Article de revue
        Assali, S., Attiaoui, A., Vecchio, P.D., Mukherjee, S., Nicolas, J. & Moutanabbir, O. (2022). A Light-Hole Germanium Quantum Well on Silicon. Advanced Materials, 34(27), 11 pages. Tiré de https://doi.org/10.1002/adma.202201192
      • Article de revue
        Burt, D., Joo, H.-J., Kim, Y., Jung, Y., Chen, M., Luo, M., Kang, D.-H., Assali, S., Zhang, L., Son, B., Fan, W., Moutanabbir, O., Ikonic, Z., Tan, C.S., Huang, Y.-C. & Nam, D. (2022). Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain. Applied Physics Letters, 120(20), 7 pages. Tiré de https://doi.org/10.1063/5.0087477
      • Article de revue
        Attiaoui, A., Fettu, G., Mukherjee, S., Bauer, M. & Moutanabbir, O. (2022). Electronic signature of subnanometer interfacial broadening in heterostructures. Nano Letters, 22(17), 7080-7086. Tiré de https://doi.org/10.1021/acs.nanolett.2c02042
      • Article de revue
        Badawy, G., Zhang, B., Rauch, T., Momand, J., Koelling, S., Jung, J., Gazibegovic, S., Moutanabbir, O., Kooi, B.J., Botti, S., Verheijen, M.A., Frolov, S.M. & Bakkers, E.P.A.M. (2022). Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires. Advanced Science, 8 pages. Tiré de https://doi.org/10.1002/advs.202105722
      • Article de revue
        Kim, Y., Assali, S., Burt, D., Jung, Y., Joo, H.-J., Chen, M., Ikonic, Z., Moutanabbir, O. & Nam, D. (2022). Enhanced GeSn Microdisk Lasers Directly Released on Si. Advanced Optical Materials, 10(2), 7 pages. Tiré de https://doi.org/10.1002/adom.202101213
      • Article de revue
        Luo, L., Assali, S., Atalla, M.R.M., Koelling, S., Attiaoui, A., Daligou, G., Martí, S., Arbiol, J. & Moutanabbir, O. (2022). Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires. ACS Photonics, 9(3), 914-921. Tiré de https://doi.org/10.1021/acsphotonics.1c01728
      • Article de revue
        Carnio, B.N., Attiaoui, A., Assali, S., Moutanabbir, O. & Elezzabi, A.Y. (2022). Extracting the complex refractive index of an ultrathin layer at terahertz frequencies with no prior knowledge of substrate absorption loss. IEEE Transactions on Terahertz Science and Technology, 12(4), 385-391. Tiré de https://doi.org/10.1109/TTHZ.2021.3140196
      • Article de revue
        Singh, S., Mukherjee, S., Mukherjee, S., Assali, S., Luo, L., Das, S., Moutanabbir, O. & Ray, S.K. (2022). Ge-Ge0.92Sn0.08 core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication. Applied Physics Letters, 120(17). Tiré de https://doi.org/10.1063/5.0087379
      • Article de revue
        Schellingerhout, S.G., de Jong, E.J., Gomanko, M., Guan, X., Jiang, Y., Hoskam, M.S.M., Jung, J., Koelling, S., Moutanabbir, O., Verheijen, M.A., Frolov, S.M. & Bakkers, E.P.A.M. (2022). Growth of PbTe nanowires by molecular beam epitaxy. Materials for Quantum Technology, 2(1). Tiré de https://doi.org/10.1088/2633-4356/ac4fba
      • Article de revue
        Atalla, M.R.M., Assali, S., Koelling, S., Attiaoui, A. & Moutanabbir, O. (2022). High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response. ACS Photonics, 9(4), 1425-1433. Tiré de https://doi.org/10.1021/acsphotonics.2c00260
      • Article de revue
        Assali, S., Attiaoui, A., Koelling, S., Atalla, M.R.M., Kumar, A., Nicolas, J., Chowdhury, F.A., Lemieux-Leduc, C. & Moutanabbir, O. (2022). Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics. Journal of Applied Physics, 132(19), 11 pages. Tiré de https://doi.org/10.1063/5.0120505
      • Article de revue
        Jung, Y., Burt, D., Zhang, L., Kim, Y., Joo, H.-J., Chen, M., Assali, S., Moutanabbir, O., Tan, C.S. & Nam, D. (2022). Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density. Photonics Research, 10(6), 6 pages. Tiré de https://doi.org/10.1364/PRJ.455443
      • Article de revue
        Assali, S., Koelling, S., Abboud, Z., Nicolas, J., Attiaoui, A. & Moutanabbir, O. (2022). 500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon. Journal of Applied Physics, 132(17), 9 pages. Tiré de https://doi.org/10.1063/5.0119624
      • Article de revue
        Abdi, S., Assali, S., Atalla, M.R.M., Koelling, S., Warrender, J.M. & Moutanabbir, O. (2022). Recrystallization and interdiffusion processes in laser-annealed strain-relaxed metastable Ge0.89Sn0.11. Journal of Applied Physics, 131(10), 9 pages. Tiré de https://doi.org/10.1063/5.0077331
      • Article de revue
        Perla, P., Faustmann, A., Kolling, S., Zellekens, P., Deacon, R., Fonseka, H.A., Kolzer, J., Sato, Y., Sanchez, A.M., Moutanabbir, O., Ishibashi, K., Grutzmacher, D., Lepsa, M.I. & Schapers, T. (2022). Te-doped selective-area grown InAs nanowires for superconducting hybrid devices. Physical Review Materials, 6(2), 9 pages. Tiré de https://doi.org/10.1103/PhysRevMaterials.6.024602
      • Article de revue
        Carnio, B.N., Zawilski, K.T., Schunemann, P.G., Moutanabbir, O. & Elezzabi, A.Y. (2022). The Coming Age of Pnictide and Chalcogenide Ternary Crystals in the Terahertz Frequency Regime. IEEE Transactions on Terahertz Science and Technology, 12(5), 433-445. Tiré de https://doi.org/10.1109/TTHZ.2022.3191840
      • Article de revue
        Koelling, S., Stehouwer, L.E.A., Paquelet Wuetz, B., Scappucci, G. & Moutanabbir, O. (2022). Three-Dimensional Atomic-Scale Tomography of Buried Semiconductor Heterointerfaces. Advanced Materials Interfaces, 10 pages. Tiré de https://doi.org/10.1002/admi.202201189
    • 2021
      • Article de revue
        Atalla, M.R.M., Assali, S., Attiaoui, A., Lemieux-Leduc, C., Kumar, A., Abdi, S. & Moutanabbir, O. (2021). All-Group IV Transferable Membrane Mid-Infrared Photodetectors. Advanced Functional Materials, 31(3), 9 pages. Tiré de https://doi.org/10.1002/adfm.202006329
      • Article de revue
        Mukherjee, S., Assali, S. & Moutanabbir, O. (2021). Atomic Pathways of Solute Segregation in the Vicinity of Nanoscale Defects. Nano Letters, 21(23), 9882-9888. Tiré de https://doi.org/10.1021/acs.nanolett.1c02577
      • Article de revue
        Groell, L., Attiaoui, A., Assali, S. & Moutanabbir, O. (2021). Combined iodine- and sulfur-based treatments for an effective passivation of GeSn surface. Journal of Physical Chemistry C, 125(17), 9516-9525. Tiré de https://doi.org/10.1021/acs.jpcc.1c01902
      • Article de revue
        Rathore, J., Nanwani, A., Mukherjee, S., Das, S., Moutanabbir, O. & Mahapatra, S. (2021). Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn. Journal of Physics D: Applied Physics, 54(18), 10 pages. Tiré de https://doi.org/10.1088/1361-6463/abe1e8
      • Article de revue
        Mukherjee, S., Wajs, M., De la Mata, M., Givan, U., Senz, S., Arbiol, J., Francoeur, S. & Moutanabbir, O. (2021). Disentangling phonon channels in nanoscale heat transport. Physical Review B, 104(7), 7 pages. Tiré de https://doi.org/10.1103/PhysRevB.104.075429
      • Article de revue
        Joo, H.-J., Kim, Y., Burt, D., Jung, Y., Zhang, L., Chen, M., Parluhutan, S.J., Kang, D.-H., Lee, C., Assali, S., Ikonic, Z., Moutanabbir, O., Cho, Y.-H., Tan, C.S. & Nam, D. (2021). 1D photonic crystal direct bandgap GeSn-on-insulator laser. Applied Physics Letters, 119(20), 6 pages. Tiré de https://doi.org/10.1063/5.0066935
      • Article de revue
        Attiaoui, A., Bouthillier, E., Daligou, G., Kumar, A., Assali, S. & Moutanabbir, O. (2021). Extended Short-Wave Infrared Absorption in Group-IV Nanowire Arrays. Physical Review Applied, 15(1), 11 pages. Tiré de https://doi.org/10.1103/PhysRevApplied.15.014034
      • Article de revue
        Assali, S., Dijkstra, A., Attiaoui, A., Bouthillier, E., Haverkort, J.E.M. & Moutanabbir, O. (2021). Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge1-xSnx Semiconductors. Physical Review Applied, 15(2), 13 pages. Tiré de https://doi.org/10.1103/PhysRevApplied.15.024031
      • Article de revue
        An, Q., Moutanabbir, O. & Guo, H. (2021). Moire patterns of twisted bilayer antimonene and their structural and electronic transition. Nanoscale, 132(31), 13427-13436. Tiré de https://doi.org/10.1039/d1nr02843j
      • Article de revue
        Moutanabbir, O., Assali, S., Gong, X., O'Reilly, E., Broderick, C.A., Marzban, B., Witzens, J., Du, W., Yu, S.Q., Chelnokov, A., Buca, D. & Nam, D. (2021). Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors. Applied Physics Letters, 118(11), 10 pages. Tiré de https://doi.org/10.1063/5.0043511
    • 2020
      • Article de revue
        Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M. & De Seta, M. (2020). Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering. Physical Review Applied, 13(4), 14 pages. Tiré de https://doi.org/10.1103/PhysRevApplied.13.044062
      • Article de revue
        Mukherjee, S., Attiaoui, A., Bauer, M. & Moutanabbir, O. (2020). 3D Atomic Mapping of Interfacial Roughness and Its Spatial Correlation Length in Sub-10 nm Superlattices. ACS Applied Materials and Interfaces, 12(1), 1728-1736. Tiré de https://doi.org/10.1021/acsami.9b13802
      • Article de revue
        Bouthillier, É., Assali, S., Nicolas, J. & Moutanabbir, O. (2020). Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors. Semiconductor Science and Technology, 35(9), 9 pages. Tiré de https://doi.org/10.1088/1361-6641/ab9846
      • Article de revue
        Nicolas, J., Assali, S., Mukherjee, S., Lotnyk, A. & Moutanabbir, O. (2020). Dislocation Pipe Diffusion and Solute Segregation during the Growth of Metastable GeSn. Crystal Growth and Design, 20(5), 3493-3498. Tiré de https://doi.org/10.1021/acs.cgd.0c00270
      • Article de revue
        An, Q., Fortin-Deschênes, M., Yu, G., Moutanabbir, O. & Guo, H. (2020). Effects of short-range order and interfacial interactions on the electronic structure of two-dimensional antimony-arsenic alloys. Journal of Applied Physics, 127(2), 12 pages. Tiré de https://doi.org/10.1063/1.5131262
      • Article de revue
        Fettu, G., Attiaoui, A., Samik, M., Bauer, M. & Moutanabbir, O. (2020). Electronic and Optical Properties of Short-Period Si/Sige Superlattices: Effects of Interfacial Atomic-Scale Roughness. ECS Meeting Abstracts, MA2020-01(G01 : Silicon compatible emerging materials, processes and technologies for advanced CMOS and post-CMOS applications 10), 1305-1305. Tiré de https://doi.org/10.1149/ma2020-01221305mtgabs
      • Article de revue
        Persichetti, L., Montanari, M., Ciano, C., Di Gaspare, L., Ortolani, M., Baldassarre, L., Zoellner, M., Mukherjee, S., Moutanabbir, O., Capellini, G., Virgilio, M. & De Seta, M. (2020). Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells. Crystals, 10(3), 13 pages. Tiré de https://doi.org/10.3390/cryst10030179
      • Article de revue
        Fortin-Deschenes, M., Zschiesche, H., Mente, T.O., Locatelli, A., Jacobberger, R.M., Genuzio, F., Lagos, M.J., Biswas, D., Jozwiak, C., Miwa, J.A., Ulstrup, S., Bostwick, A., Rotenberg, E., Arnold, M.S., Botton, G.A. & Moutanabbir, O. (2020). Pnictogens allotropy and phase transformation during van der waals growth. Nano Letters, 20(11), 8258-8266. Tiré de https://doi.org/10.1021/acs.nanolett.0c03372
      • Article de revue
        von den Driesch, N., Wirths, S., Troitsch, R., Mussler, G., Breuer, U., Moutanabbir, O., Grutzmacher, D. & Buca, D. (2020). Thermally activated diffusion and lattice relaxation in (Si)GeSn materials. Physical Review Materials, 4(3), 6 pages. Tiré de https://doi.org/10.1103/PhysRevMaterials.4.033604
      • Article de revue
        Nateghi, N., Samik, M., Cardinal, D., Jacobberger, R.M., Way, A.J., de la Mata, M., Martel, R., Desjardins, P., Arbiol, J., Arnold, M.S. & Moutanabbir, O. (2020). Van Der Waals Growth of III-V Semiconductors on Graphene. ECS Meeting Abstracts, MA2020-01(B06 : 2D Layered Materials from Fundamental Science to Applications). Tiré de https://doi.org/10.1149/MA2020-0110835mtgabs
      • Article de revue
        Del Vecchio, P., Lodari, M., Sammak, A., Scappucci, G. & Moutanabbir, O. (2020). Vanishing Zeeman energy in a two-dimensional hole gas. Physical Review B, 102(11), 12 pages. Tiré de https://doi.org/10.1103/PhysRevB.102.115304
    • 2019
      • Article de revue
        Jacobberger, R.M., Murray, E.A., Fortin-Deschênes, M., Göltl, F., Behn, W.A., Krebs, Z.J., Levesque, P.L., Savage, D.E., Smoot, C., Lagally, M.G., Desjardins, P., Martel, R., Brar, V., Moutanabbir, O., Mavrikakis, M. & Arnold, M.S. (2019). Alignment of semiconducting graphene nanoribbons on vicinal Ge(001). Nanoscale, 11(11), 4864-4875. Tiré de https://doi.org/10.1039/C9NR00713J
      • Article de revue
        Fortin-Deschênes, M., Waller, O., An, Q., Lagos, M.J., Botton, G.A., Guo, H. & Moutanabbir, O. (2019). 2D Antimony–Arsenic Alloys. Small, 16(3), 7 pages. Tiré de https://doi.org/10.1002/smll.201906540
      • Article de revue
        Fortin-Deschênes, M., Jacobberger, R.M., Deslauriers, C.-A., Waller, O., Bouthillier, É., Arnold, M.S. & Moutanabbir, O. (2019). Dynamics of Antimonene-Graphene Van Der Waals Growth. Advanced Materials, 31(21), 7 pages. Tiré de https://doi.org/10.1002/adma.201900569
      • Article de revue
        Assali, S., Nicolas, J. & Moutanabbir, O. (2019). Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation. Journal of Applied Physics, 125(2). Tiré de https://doi.org/10.1063/1.5050273
      • Article de revue
        Ciano, C., Di Gaspare, L., Montanari, M., Persichetti, L., Baldassarre, L., Ortolani, M., Capellini, G., Skibitzki, O., Zöllner, M., Faist, J., Scalari, G., Stark, D., Paul, D.J., Rew, K., Moutanabbir, O., Mukherjee, S., Grange, T., Birner, S., Virgilio, M. & De Seta, M. (2019). n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser. ECS Transactions, 93(1), 63-66. Tiré de https://doi.org/10.1149/09301.0063ecst
      • Article de revue
        Assali, S., Elsayed, M., Nicolas, J., Liedke, M.O., Wagner, A., Butterling, M., Krause-Rehberg, R. & Moutanabbir, O. (2019). Vacancy complexes in nonequilibrium germanium-tin semiconductors. Applied Physics Letters, 114(25), 6 pages. Tiré de https://doi.org/10.1063/1.5108878
    • 2018
      • Article de revue
        Assali, S., Nicolas, J., Mukherjee, S., Dijkstra, A. & Moutanabbir, O. (2018). Atomically uniform Sn-rich GeSn semiconductors with 3.0-3.5 µm room-temperature optical emission. Applied Physics Letters, 112(25), 5 pages. Tiré de https://doi.org/10.1063/1.5038644
      • Article de revue
        Mamun, M.A., Tapily, K., Moutanabbir, O., Baumgart, H. & Elmustafa, A.A. (2018). Effect of hydrogen implantation on the mechanical properties of AlN throughout ion-induced splitting. ECS Journal of Solid State Science and Technology, 7(4), P180-P184. Tiré de https://doi.org/10.1149/2.0131804jss
      • Article de revue
        Attiaoui, A., Wirth, S., Blanchard-Dionne, A.-P., Meunier, M., Hartmann, J.M., Buca, D. & Moutanabbir, O. (2018). Extreme IR absorption in group IV-SiGeSn core-shell nanowires. Journal of Applied Physics, 123(22), 13 pages. Tiré de https://doi.org/10.1063/1.5021393
      • Article de revue
        Mukherjee, S., Nateghi, N., Jacobberger, R.M., Bouthillier, E., de la Mata, M., Arbiol, J., Coenen, T., Cardinal, D., Levesque, P., Desjardins, P., Martel, R., Arnold, M.S. & Moutanabbir, O. (2018). Growth and luminescence of polytypic InP on epitaxial graphene. Advanced Functional Materials, 28(8). Tiré de https://doi.org/10.1002/adfm.201705592
      • Article de revue
        Fortin-Deschenes, M. & Moutanabbir, O. (2018). Recovering the semiconductor properties of the epitaxial group V 2D materials antimonene and arsenene. Journal of Physical Chemistry C, 122(16), 9162-9168. Tiré de https://doi.org/10.1021/acs.jpcc.8b00044
      • Article de revue
        Mukherjee, S., Givan, U., Senz, S., De la Mata, M., Arbiol, J. & Moutanabbir, O. (2018). Reduction of thermal conductivity in nanowires by combined engineering of crystal phase and isotope disorder. Nano Letters, 18(5), 3066-3075. Tiré de https://doi.org/10.1021/acs.nanolett.8b00612
      • Article de revue
        Sahamir, S.R., Said, S.M., Sabri, M.F.M., Mahmood, M.S., Bin Kamarudin, M.A. & Moutanabbir, O. (2018). Studies on relation between columnar order and electrical conductivity in HAT6 discotic liquid crystals using temperature-dependent Raman spectroscopy and DFT calculations. Liquid Crystals, 45(4), 522-535. Tiré de https://doi.org/10.1080/02678292.2017.1359693
      • Article de revue
        Assali, S., Attiaoui, A., Mukherjee, S., Nicolas, J. & Moutanabbir, O. (2018). TEOS layers for low temperature processing of group IV optoelectronic devices. Journal of Vacuum Science & Technology B, 36(6), 8 pages. Tiré de https://doi.org/10.1116/1.5047909
    • 2017
      • Article de revue
        Jung, D., Faucher, J., Mukherjee, S., Akey, A., Ironside, D.J., Cabral, M., Sang, X., Lebeau, J., Bank, S.R., Buonassisi, T., Moutanabbir, O. & Lee, M.L. (2017). Highly tensile-strained Ge/InAlAs nanocomposites. Nature Communications, 8, 7 pages. Tiré de https://doi.org/10.1038/ncomms14204
      • Article de revue
        Mukherjee, S., Kodali, N., Isheim, D., Wirths, S., Hartmann, J.M., Buca, D., Seidman, D.N. & Moutanabbir, O. (2017). Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors. Physical Review B, 95(16), 5 pages. Tiré de https://doi.org/10.1103/PhysRevB.95.161402
      • Article de revue
        Fortin-Deschenes, M., Waller, O., Mentes, T.O., Locatelli, A., Mukherjee, S., Genuzio, F., Levesque, P.L., Hebert, A., Martel, R. & Moutanabbir, O. (2017). Synthesis of antimonene on germanium. Nano Letters, 17(8), 4970-4975. Tiré de https://doi.org/10.1021/acs.nanolett.7b02111
      • Article de revue
        Abboud, Z. & Moutanabbir, O. (2017). Temperature-dependent in situ studies of volatile molecule trapping in low temperature-activated Zr alloy-based getters. Journal of Physical Chemistry C, 121(6), 3381-3396. Tiré de https://doi.org/10.1021/acs.jpcc.6b11426
    • 2016
      • Article de revue
        Fortin-Deschenes, M., Levesque, P.L., Martel, R. & Moutanabbir, O. (2016). Dynamics and mechanisms of exfoliated black phosphorus sublimation. Journal of Physical Chemistry Letters, 7(9), 1667-1674. Tiré de https://doi.org/10.1021/acs.jpclett.6b00584
      • Article de revue
        Moutanabbir, O., Isheim, D., Zugang, M. & Seidman, D.N. (2016). Evidence of sub-10 nm aluminum-oxygen precipitates in silicon. Nanotechnology, 27(20), 7 pages. Tiré de https://doi.org/10.1088/0957-4484/27/20/205706
      • Article de revue
        Mukherjee, S., Watanabe, H., Isheim, D., Seidman, D.N. & Moutanabbir, O. (2016). Laser-assisted field evaporation and three-dimensional atom-by-atom mapping of diamond isotopic homojunctions. Nano Letters, 16(2), 1335-1344. Tiré de https://doi.org/10.1021/acs.nanolett.5b04728
      • Article de revue
        Mukherjee, S., Isheim, D., Seidman, D.N. & Moutanabbir, O. (2016). Mapping isotopes in nanoscale and quantum materials using atom probe tomography. Microscopy and Microanalysis, 22(S3), 652-653. Tiré de https://doi.org/10.1017/S1431927616004116
      • Article de revue
        Chagnon, D., Pippel, E., Senz, S. & Moutanabbir, O. (2016). Metal Seed Loss Throughout the Nanowire Growth: Bulk Trapping and Surface Mass Transport. Journal of Physical Chemistry C, 120(5), 2932-2940. Tiré de https://doi.org/10.1021/acs.jpcc.5b07361
    • 2015
      • Article de revue
        Fournier-Lupien, J.H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J.M., Desjardins, P., Buca, D. & Moutanabbir, O. (2015). Erratum: Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 106(17). Tiré de https://doi.org/10.1063/1.4919130
      • Article de revue
        Mukherjee, S., Givan, U., Senz, S., Bergeron, A., Francoeur, S., De La Mata, M., Arbiol, J., Sekiguchi, T., Itoh, K.M., Isheim, D., Seidman, D.N. & Moutanabbir, O. (2015). Phonon Engineering in Isotopically Disordered Silicon Nanowires. Nano Letters, 15(6), 3885-3893. Tiré de https://doi.org/10.1021/acs.nanolett.5b00708
      • Article de revue
        Scheerschmidt, K. & Moutanabbir, O. (2015). Tracking atomic processes throughout the formation of heteroepitaxial interfaces. Crystal Research and Technology, 50(6), 490-498. Tiré de https://doi.org/10.1002/crat.201500061
    • 2014
      • Article de revue
        Xiong, G., Moutanabbir, O., Reiche, M., Harder, R. & Robinson, I. (2014). Coherent X-ray diffraction imaging and characterization of strain in silicon-on-insulator nanostructures. Advanced Materials, 26(46), 7747-7763. Tiré de https://doi.org/10.1002/adma.201304511
      • Article de revue
        Balois, M.V., Hayazawa, N., Tarun, A., Kawata, S., Reiche, M. & Moutanabbir, O. (2014). Direct optical mapping of anisotropic stresses in nanowires using transverse optical phonon splitting. Nano Letters, 14(7), 3793-3798. Tiré de https://doi.org/10.1021/nl500891f
      • Article de revue
        Dadwal, U., Kumar, P., Moutanabbir, O., Reiche, M. & Singh, R. (2014). Effect of implantation temperature on the H-induced microstructural damage in AlN. Journal of Alloys and Compounds, 588, 300-304. Tiré de https://doi.org/10.1016/j.jallcom.2013.10.227
      • Article de revue
        Attiaoui, A. & Moutanabbir, O. (2014). Indirect-to-direct band gap transition in relaxed and strained Ge 1-x-ySixSny ternary alloys. Journal of Applied Physics, 116(6). Tiré de https://doi.org/10.1063/1.4889926
      • Article de revue
        Lee, S.-M., Pippel, E., Moutanabbir, O., Kim, J.-H., Lee, H.-J. & Knez, M. (2014). In Situ Raman Spectroscopic Study of Al-Infiltrated Spider Dragline Silk under Tensile Deformation. ACS Applied Materials & Interfaces, 6(19), 16827-16834. Tiré de https://doi.org/10.1021/am5041797
      • Article de revue
        Blumtritt, H., Isheim, D., Senz, S., Seidman, D.N. & Moutanabbir, O. (2014). Preparation of nanowire specimens for laser-assisted atom probe tomography. Nanotechnology, 25(43). Tiré de https://doi.org/10.1088/0957-4484/25/43/435704
      • Article de revue
        Chen, P., Zhang, J.J., Feser, J.P., Pezzoli, F., Moutanabbir, O., Cecchi, S., Isella, G., Gemming, T., Baunack, S., Chen, G., Schmidt, O.G. & Rastelli, A. (2014). Thermal transport through short-period SiGe nanodot superlattices. Journal of Applied Physics, 115(4). Tiré de https://doi.org/10.1063/1.4863115
    • 2013
      • Article de revue
        Moutanabbir, O., Isheim, D., Blumtritt, H., Senz, S., Pippel, E. & Seidman, D.N. (2013). Colossal injection of catalyst atoms into silicon nanowires. Nature, 496(7443), 78-82. Tiré de https://doi.org/10.1038/nature11999
      • Article de revue
        Essig, S., Moutanabbir, O., Wekkeli, A., Nahme, H., Oliva, E., Bett, A.W. & Dimroth, F. (2013). Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity. Journal of Applied Physics, 113(20). Tiré de https://doi.org/10.1063/1.4807905
      • Article de revue
        Fournier-Lupien, J.-H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J.M., Desjardins, P., Buca, D. & Moutanabbir, O. (2013). Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 103(26). Tiré de https://doi.org/10.1063/1.4855436
      • Article de revue
        Tarun, A., Hayazawa, N., Balois, M.V., Kawata, S., Reiche, M. & Moutanabbir, O. (2013). Stress redistribution in individual ultrathin strained silicon nanowires: A high-resolution polarized Raman study. New Journal of Physics, 15(5). Tiré de https://doi.org/10.1088/1367-2630/15/5/053042
    • 2012
      • Article de revue
        Qin, Y., Vogelgesang, R., Eßlinger, M., Sigle, W., Van Aken, P., Moutanabbir, O. & Knez, M. (2012). Bottom-up tailoring of plasmonic nanopeapods making use of the periodical topography of carbon nanocoil templates. Advanced Functional Materials, 22(24), 5157-5165. Tiré de https://doi.org/10.1002/adfm.201201791
      • Article de revue
        Moutanabbir, O., Ratto, F., Heun, S., Scheerschmidt, K., Locatelli, A. & Rosei, F. (2012). Dynamic Probe of Atom Exchange During Monolayer Growth. Physical Review B, 85(20). Tiré de https://doi.org/10.1103/PhysRevB.85.201416
      • Article de revue
        Tong, X., Qin, Y., Guo, X., Moutanabbir, O., Ao, X., Pippel, E., Zhang, L. & Knez, M. (2012). Enhanced catalytic activity for methanol electro-oxidation of uniformly dispersed nickel oxide nanoparticles-carbon nanotube hybrid materials. Small, 8(22), 3390-3395. Tiré de https://doi.org/10.1002/smll.201200839
      • Article de revue
        Hahnel, A., Reiche, M., Moutanabbir, O., Blumtritt, H., Geisler, H., Hontschel, J. & Engelmann, H.-J. (2012). Improving accuracy and precision of strain analysis by energy-filtered nanobeam electron diffraction. Microscopy and Microanalysis, 18(1), 229-40. Tiré de https://doi.org/10.1017/S1431927611012657
    • 2011
      • Article de revue
        Tarun, A., Hayazawa, N., Ishitobi, H., Kawata, S., Reiche, M. & Moutanabbir, O. (2011). Mapping the "forbidden" transverse-optical phonon in single strained silicon (100) nanowire. Nano Letters, 11(11), 4780-4788. Tiré de https://doi.org/10.1021/nl202599q
  • Communications de conférence (43)
    • 2022
      • Communication de conférence
        Joo, H.-J., Kim, Y., Burt, D., Yung, Y., Zhang, L., Chen, M., Parluhutan, S.J., Kang, D.-H., Lee, C., Assali, S., Ikonic, Z., Moutanabbir, O., Cho, Y.-H., Tan, C.S. & Nam, D. (2022). 1D photonic crystal GeSn-on-insulator nanobeam laser. Communication présentée à Silicon Photonics XVII, San Francisco, CA, USA (9 pages). Tiré de https://doi.org/10.1117/12.2608589
      • Communication de conférence
        Del Vecchio, P. & Moutanabbir, O. (2022). Electric-dipole spin resonance for light-holes in germanium quantum wel. Communication présentée à 2022 APS March Meeting, Chicago, Illinois.
      • Communication de conférence
        Carnio, B.N., Attiaoui, A., Assali, S., Moutanabbir, O. & Elezzabi, A.Y. (2022). Extracting the linear terahertz properties of thin films using complementary transmission and reflection measurements: Applied to GeSn thin films. Communication présentée à International Conference on Ultrafast Phenomena (UP) 2022, Montreal, Quebec. Tiré de https://doi.org/10.1364/UP.2022.W4A.19
      • Communication de conférence
        Attiaoui, A., Assali, S., Luo, L., Daligou, G., Atala, M., Koelling, S. & Moutanabbir, O. (2022). Group-IV GeSn nanophotonics. Communication présentée à IEEE Photonics Society Summer Topicals Meeting Series (SUM 2022), Cabo San Lucas, Mexico (2 pages). Tiré de https://doi.org/10.1109/SUM53465.2022.9858265
      • Communication de conférence
        Kim, Y., Assali, S., Burt, D., Jung, Y., Joo, H.-J., Chen, M., Ikonic, Z., Moutanabbir, O. & Nam, D. (2022). Improved GeSn microdisk lasers directly sitting on Si. Communication présentée à Silicon Photonics XVII, San Francisco, CA, USA (7 pages). Tiré de https://doi.org/10.1117/12.2610599
      • Communication de conférence
        Losert, M.P., Wuetz, B.P., Koelling, S., Stehouwer, L., Zwerver, A.-M.J., Philips, S.G., Madzik, M.G., Xue, X., Zheng, G., Lodari, M., Amitonov, S.V., Samkharadze, N., Sammak, A., Vanderspyen, L., Rahman, R., Coppersmith, S.N., Moutanabbir, O., Friesen, M.G. & Scappucci, G. (2022). Increasing the valley splitting in Si/SiGe heterostructures by exploiting atomic concentration fluctuations. Communication présentée à 2022 APS March Meeting, Chicago, Illinois. Tiré de https://meetings.aps.org/Meeting/MAR22/Session/D39.4
      • Communication de conférence
        Chen, M., Jung, Y., Burt, D., Kim, Y., Joo, H.-J., Zhang, L., Assali, S., Moutanabbir, O., Tan, C.S. & Nam, D. (2022). Low-Threshold Lasing in GeSnOI Microdisk Lasers with Reduced Defect Density. Communication présentée à Conference on Lasers and Electro-Optics (CLEO 2022), San José, CA, USA (2 pages).
      • Communication de conférence
        Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M. & De Seta, M. (2022). Microscopic modeling of interface roughness scattering and application to the simulation of quantum cascade lasers. Communication présentée à International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2022), Turin, Italy (p. 51-52). Tiré de https://doi.org/10.1109/NUSOD54938.2022.9894753
      • Communication de conférence
        Atalla, M., Assali, S., Koelling, S., Daligou, G., Attiaoui, A., Luo, L., Lemieux-Leduc, C., Abdi, S. & Moutanabbir, O. (2022). Mid-infrared silicon-integrated high-bandwidth GeSn PIN photodetectors and LEDs. Communication présentée à Conference on Lasers and Electro-Optics (CLEO 2022), San José, CA, USA (2 pages).
      • Communication de conférence
        Daligou, G., Assali, S., Attiaoui, A., Bouthillier, É. & Moutanabbir, O. (2022). Radiative carrier lifetime in GeSn mid-infrared emitters. Communication présentée à IEEE Photonics Society Summer Topicals Meeting Series (SUM 2022), Cabo San Lucas, Mexico (2 pages). Tiré de https://doi.org/10.1109/SUM53465.2022.9858226
      • Communication de conférence
        Burt, D., Jooa, H.-J., Kim, Y., Jung, Y., Chen, M., Luo, M., Kang, D.-H., Assali, S., Zhang, L., Son, B., Fan, W., Moutanabbir, O., Ikonic, Z., Tan, C.S., Huang, Y.-C. & Nam, D. (2022). Tensile-strained direct bandgap GeSnOI micro/nanostructures by harnessing residual strain. Communication présentée à Silicon Photonics XVII. Tiré de https://doi.org/10.1117/12.2608742
    • 2021
      • Communication de conférence
        Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., De Seta, M., Belyanin, A.A. & Smowton, P.M. (2021). Atomic-scale modeling of interface roughness scattering in quantum cascade lasers. Communication présentée à Novel In-Plane Semiconductor Lasers XX. Tiré de https://doi.org/10.1117/12.2585205
      • Communication de conférence
        Atalla, M.R.M., Assali, S., Attiaoui, A., Lemieux-Leduc, C., Kumar, A., Abdi, S. & Moutanabbir, O. (2021). GeSn membrane mid-infrared photodetectors. Communication présentée à Conference on Lasers and Electro-Optics (CLEO 2021), San José, CA, USA (2 pages). Tiré de https://doi.org/10.1364/cleo_at.2021.atu1t.4
      • Communication de conférence
        Attiaoui, A., Assali, S., Del-Vecchio, P., Nicolas, J. & Moutanabbir, O. (2021). Tuning Light-Hole Optical Transition in Highly Tensile Strained Germanium Quantum Wells. Communication présentée à Conference on Lasers and Electro-Optics (CLEO 2021), San José, CA, USA (2 pages).
    • 2020
      • Communication de conférence
        Assali, S., Attiaoui, A., Atalla, M.R.M., Dijkstra, A., Aashish, K., Mukherjee, S., Abdi, S. & Moutanabbir, O. (2020). Epitaxial GeSn and its integration in MIR optoelectronics. Communication présentée à Science and Innovations 2020 (CLEO), Washington, D.C. Tiré de https://doi.org/10.1364/CLEO_SI.2020.SM3M.2
      • Communication de conférence
        Fortin-Deschênes, M. & Moutanabbir, O. (2020). (Invited) Growth of Van Der Waals Materials: New Insights from Real-Time Studies [Résumé]. Communication présentée à 237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020), Montréal, Canada. (Publié dans ECS Meeting Abstracts, MA2020-01(B06 : 2D Layered Materials from Fundamental Science to Applications)). Tiré de https://doi.org/10.1149/MA2020-0110831mtgabs
      • Communication de conférence
        Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G. & Moutanabbir, O. (2020). Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale. Communication présentée à SiGe, Ge, and Related Compounds: Materials, Processing, and Devices (PRiME 2020). (Publié dans ECS Transactions, 98(5), 447-455). Tiré de https://doi.org/10.1149/09805.0447ecst
    • 2019
      • Communication de conférence
        Persichetti, L., Ciano, C., Virgilio, M., Montanari, M., Di Gaspare, L., Ortolani, M., Baldassarre, L., Zoellner, M., Skibitzki, O., Stark, D., Scalari, G., Faist, J., Rew, K., Paul, D.J., Mukherjee, S., Moutanabbir, O., Scuderi, M., Nicotra, G., Grange, T., Birner, S., Capellini, G., De Seta, M., Congreve, D., Bronstein, H.A., Nielsen, C. & Deschler, F. (2019). Electron state coupling in asymmetric Ge/SiGe quantum wells (Conference Presentation) [Présentation orale]. Présenté à Physical Chemistry of Semiconductor Materials and Interfaces XVIII, San Diego, CA, USA. Tiré de https://doi.org/10.1117/12.2527666
      • Communication de conférence
        Moutanabbir, O., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Nicolas, J., Mukherjee, S. & Assali, S. (2019). Germanium-tin semiconductors : a versatile silicon-compatible platform. Communication présentée à VII Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Kyoto, Japan. Tiré de https://dc.engconfintl.org/ulsic_tft_vii/36/
      • Communication de conférence
        Assali, S., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Mukherjee, S., Nicolas, J. & Moutanabbir, O. (2019). Germanium-Tin Semiconductors for Silicon-Compatible Mid-Infrared Photonics. Communication présentée à Conference on Lasers and Electro-Optics, San Jose, California. Tiré de https://doi.org/10.1364/CLEO_SI.2019.STh4O.5
      • Communication de conférence
        Montanari, M., Ciano, C., Persichetti, L., Gaspare, L.D., Virgilio, M., Capellini, G., Zoellner, M., Skibitzki, O., Stark, D., Scalari, G., Faist, J., Paul, D.J., Grange, T., Birner, S., Scuderi, M., Nicotra, G., Moutanabbir, O., Mukherjee, S., Baldassarre, L., Ortolani, M. & Seta, M.D. (2019). High-Quality n-Type Ge/SiGe Multilayers for THz Quantum Cascade Lasers. Communication présentée à 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019), Paris, France (2 pages). Tiré de https://doi.org/10.1109/IRMMW-THz.2019.8874294
      • Communication de conférence
        Assali, S., Abdi, S., Atalla, M., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Groell, L., Kumar, A., Luo, L., Mukherjee, S., Nicolas, J. & Moutanabbir, O. (2019). (Si)GeSn Semiconductors for Integrated Optoelectronics, Quantum Electronics, and More [Résumé]. Communication présentée à 236th ECS Meeting, Atlanta, GA. (Publié dans ECS Meeting Abstracts, MA2019-02(25)). Tiré de https://doi.org/10.1149/MA2019-02/25/1162
    • 2018
      • Communication de conférence
        Mukherjee, S., Bauer, M., Attiaoui, A. & Moutanabbir, O. (2018). Atomistic and Optical Properties of Group IV Ultrathin Superlattices [Résumé]. Communication présentée à AiMES 2018 Meeting, Cancun, Mexico. (Publié dans ECS Meeting Abstracts, MA2018-02(31)). Tiré de https://doi.org/10.1149/MA2018-02/31/1077
      • Communication de conférence
        Bouthillier, É., Assali, S., Nicolas, J. & Moutanabbir, O. (2018). Decoupling Strain and Composition Effects on Ge1-YSny Lattice Vibrations [Résumé]. Communication présentée à AiMES 2018 Meeting, Cancun, Mexico. (Publié dans ECS Meeting Abstracts, MA2018-02(31)). Tiré de https://doi.org/10.1149/MA2018-02/31/1088
      • Communication de conférence
        Abboud, Z., Chagnon, D., Assali, S., Fortin-Deschenes, M., Coia, C. & Moutanabbir, O. (2018). Hermetic Wafer-Level Packaging of Microbolometers for Uncooled Thermal Cameras [Résumé]. Communication présentée à AiMES 2018 Meeting, Cancun, Mexico. (Publié dans ECS Meeting Abstracts, MA2018-02(29)). Tiré de https://doi.org/10.1149/MA2018-02/29/976
      • Communication de conférence
        Moutanabbir, O. & Mukherjee, S. (2018). Isotopically Programmed Group IV Semiconductors: A Versatile Platform for Quantum Technologies [Résumé]. Communication présentée à AiMES 2018 Meeting, Cancun, Mexico. (Publié dans ECS Meeting Abstracts, MA2018-02(31)). Tiré de https://doi.org/10.1149/MA2018-02/31/1083
      • Communication de conférence
        Attiaoui, A., Assali, S., Nicolas, J. & Moutanabbir, O. (2018). Mapping Strain and Composition Effects on Gesn Band Structure Using Spectroscopic Ellipsometry [Résumé]. Communication présentée à AiMES 2018 Meeting, Cancun, Mexico. (Publié dans ECS Meeting Abstracts, MA2018-02(31)). Tiré de https://doi.org/10.1149/MA2018-02/31/1089
      • Communication de conférence
        Assali, S., Nicolas, J., Mukherjee, S., Bouthillier, É., Attiaoui, A. & Moutanabbir, O. (2018). Structure and Optoelectronic Properties of Atomically Random Sn-Rich Gesn Semiconductors [Résumé]. Communication présentée à AiMES 2018 Meeting, Cancun, Mexico. (Publié dans ECS Meeting Abstracts, MA2018-02(31)). Tiré de https://doi.org/10.1149/MA2018-02/31/1024
    • 2017
      • Communication de conférence
        Fortin-Deschênes, M., Waller, O., Hébert, A. & Moutanabbir, O. (2017). Epitaxial group V 2D materials : growth and electronic properties [Affiche]. Présenté à Materials Research Society Spring Meeting & Exhibit (MRS 2017), Phoenix, Arizona.
      • Communication de conférence
        Chagnon, D., Abboud, Z. & Moutanabbir, O. (2017). In situ monitoring of microstructure and phase changes of AuSn solders for hermetic wafer-level packaging [Affiche]. Présenté à 18th Canadian Semiconductor Science and Technology Conference (CSSTC 2017), Waterloo, Ont. Tiré de http://www.eng.uwaterloo.ca/CSSTC/2017/Abstracts/CSSTC2017.0823.60.pdf
      • Communication de conférence
        Mukherjee, S., Nateghi, N., Jacobberger, R., Mata, M., Arbiol, J., Coenen, T., Way, A., Arnold, M. & Moutanabbir, O. (2017). Light emission from InP/graphene hybrid epitaxial structures [Affiche]. Présenté à Materials Research Society Spring Meeting & Exhibit (MRS 2017), Phoenix, Arizona.
      • Communication de conférence
        Fortin-Deschênes, M., Lévesque, P., Martel, R. & Moutanabbir, O. (2017). Mechanisms and dynamics of two-dimensional black phosphorus sublimation [Affiche]. Présenté à Materials Research Society Spring Meeting & Exhibit (MRS 2017), Phoenix, Arizona.
    • 2015
      • Communication de conférence
        Mukherjee, S., Attiaoui, A., Watanabe, H., Isheim, D., Seidman, D.N. & Moutanabbir, O. (2015). 3D atom-by-atom mapping of emerging group IV semiconductors [Affiche]. Présenté à 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec.
      • Communication de conférence
        Collette, M., Moutanabbir, O. & Champagne, A.R. (2015). Electronic transport in silicon nanowires with ordered stacking faults [Affiche]. Présenté à 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec.
      • Communication de conférence
        Nateghi, N., Mukherjee, S., Choubak, S., Nguyen, M., Lévesque, P., Martel, R., Desjardins, P. & Moutanabbir, O. (2015). Growth of III-V semiconductors on silicon oxide/silicon using graphene interlayer [Affiche]. Présenté à 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec.
      • Communication de conférence
        Fournier-Lupien, J.-H., Chagnon, D., Lévesque, P., Wirths, S., Pippel, E., Mussler, G., Hartmann, J.M., Mantl, S., Desjardins, P., Buca, D. & Moutanabbir, O. (2015). In situ studies of germanium-tin and silicon-germanium-tin dynamics of phase separation [Affiche]. Présenté à 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec.
      • Communication de conférence
        Lewis, J.B., Isheim, D., Moutanabbir, O., Floss, C. & Seidman, D.N. (2015). Standardization and correction of artifacts in atom-probe tomographic analysis of Allende nanodiamonds [Résumé]. Communication présentée à 78th Annual Meeting of the Meteoritical Society, Berkeley, Calif. (Publié dans Meteoritics & Planetary Science, 50(S1), 1 page). Tiré de https://onlinelibrary.wiley.com/doi/pdf/10.1111/maps.12501#page=188
    • 2014
      • Communication de conférence
        Fournier-Lupien, J.H., Chagnon, D., Levesque, P., AlMutairi, A.A., Wirths, S., Pippel, E., Mussler, G., Hartmann, J.M., Mantl, S., Buca, D. & Moutanabbir, O. (2014). In situ studies of germanium-tin and silicon-germanium-tin thermal stability. Communication présentée à 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico (p. 903-911). Tiré de https://doi.org/10.1149/06406.0903ecst
      • Communication de conférence
        Chagnon, D., Isik, D., Levesque, P., Lewis, F., Caza, M.-E., Le, X.T., Poirier, J.-S., Michel, D., Larger, R. & Moutanabbir, O. (2014). Metal-assisted hermetic wafer-level packaging. Communication présentée à 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014, Tokyo, Japan (p. 60). Tiré de https://doi.org/10.1109/LTB-3D.2014.6886197
      • Communication de conférence
        Attiaoui, A. & Moutanabbir, O. (2014). Optical and electronic properties of GeSn and GeSiSn heterostructures and nanowires. Communication présentée à 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico (p. 869-879). Tiré de https://doi.org/10.1149/06406.0869ecst
    • 2012
      • Communication de conférence
        Baumgart, H. & Moutanabbir, O. (2012). Heterointegration of compound III-V semiconductors by wafer bonding and layer splitting for optoelectronic applications. Communication présentée à 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012, Tokyo, Japan (p. 209). Tiré de https://doi.org/10.1109/LTB-3D.2012.6238092
      • Communication de conférence
        Wright, C., Mamun, M.A., Tapily, K., Moutanabbir, O., Gu, D., Baumgart, H. & Elmustafa, A.A. (2012). Nanomechanical properties of hydrogen implanted AIN for layer transfer by ion-induced splitting [Affiche]. Présenté à TMS 141st Annual Meeting and Exhibition, Orlando, Fl.
      • Communication de conférence
        Senichev, A., Givan, U., Moutanabbir, O., Talalaev, V. & Werner, P. (2012). Near-field scanning optical microscopy of infrared emitting semiconductor nanostructures [Affiche]. Présenté à 76th Annual Meeting of the DPG and DPG Spring Meeting, Berlin, Germany.
  • Chapitres de livre (1)
    • 2018
      • Chapitre de livre
        Xiong, G., Moutanabbir, O., Reiche, M., Harder, R. & Robinson, I. (2018). Investigating strain in silicon-on-insulator nanostructures by coherent X-ray diffraction. Dans C. Fan & Z. Zhao (édit.), Synchrotron radiation in materials science (p. 239-274). Wiley. Tiré de https://doi.org/10.1002/9783527697106.ch8