Répertoire des expertises

Moutanabbir, Oussama

Répertoire des expertises

Moutanabbir, Oussama

Répertoire des expertises

Publications par type

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Oussama Moutanabbir (163)

Articles de revue (110)
- 2023
  - Carnio, B. N., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2023). CdSiP2: An emerging crystal for electro-optic sampling from terahertz to the infrared. ACS Applied Optical Materials, 1(5), 997-1003.
  - Atalla, M. R. M., Assali, S., Koelling, S., Attiaoui, A., & Moutanabbir, O. (2023). Dark current in monolithic extended-SWIR GeSn PIN photodetectors. Applied Physics Letters, 122(3), 031103 (6 pages).
  - Carnio, B. N., Zhang, M., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2023). Emission and sensing of high-frequency terahertz electric fields using a GaSe crystal. Optics Express, 31(2), 3304-3314.
  - Atalla, M. R. M., Kim, Y., Assali, S., Burt, D., Nam, D., & Moutanabbir, O. (2023). Extended-SWIR GeSn LEDs with reduced footprint and efficient operation power. ACS Photonics, 10(5), 1649-1653.
  - Carnio, B. N., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2023). Generation of 1732 THz radiation from a CdSiP2 crystal. Optics Letters, 48(5), 1200-1203.
  - Daligou, G., Soref, R., Attiaoui, A., Hossain, J., Atalla, M. R. M., Vecchio, P. D., & Moutanabbir, O. (2023). Group IV Mid-Infrared Thermophotovoltaic Cells on Silicon. IEEE Journal of Photovoltaics, 13(5), 728-735.
  - Carnio, B. N., Zhang, M., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2023). Intra-pulse difference frequency generation in ZnGeP2 for high-frequency terahertz radiation generation. Scientific Reports, 13(1), 8 pages.
  - Del Vecchio, P., & Moutanabbir, O. (2023). Light-hole gate-defined spin-orbit qubit. Physical Review B, 107(16), L161406 (6 pages).
  - Carnio, B. N., Moutanabbir, O., & Elezzabi, A. Y. (2023). Methodology for computing Fourier-transform infrared spectroscopy interferograms. Applied Optics, 62(17), 4518-4523.
  - Fettu, G., Sipe, J. E., & Moutanabbir, O. (2023). Mid-infrared optical spin injection and coherent control. Physical Review B, 107(16), 165202 (8 pages).
  - Carnio, B. N., Moutanabbir, O., & Elezzabi, A. Y. (2023). Nonlinear Photonic Waveguides: A Versatile Platform for Terahertz Radiation Generation (a Review). Laser & Photonics Reviews, 17(4), 19 pages.
  - Attiaoui, A., Daligou, G., Assali, S., Skibitzki, O., Schroeder, T., & Moutanabbir, O. (2023). Polarization-tuned fano resonances in all-dielectric short-wave infrared metasurface. Advanced Materials, 35(28), 2300595 (9 pages).
  - Kim, Y., Assali, S., Joo, H.-J., Koelling, S., Chen, M., Luo, L., Shi, X., Burt, D., Ikonic, Z., Nam, D., & Moutanabbir, O. (2023). Short-wave infrared cavity resonances in a single GeSn nanowire. Nature Communications, 14(1), 4393 (7 pages).
  - Koelling, S., Stehouwer, L. E. A., Paquelet Wuetz, B., Scappucci, G., & Moutanabbir, O. (2023). Three-dimensional atomic-scale tomography of buried semiconductor heterointerfaces. Advanced Materials: Interfaces, 10(3), 2201189.
- 2022
  - Assali, S., Attiaoui, A., Vecchio, P. D., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2022). A Light-Hole Germanium Quantum Well on Silicon. Advanced Materials, 34(27), e2201192 (11 pages).
  - Paquelet Wuetz, B., Losert, M. P., Koelling, S., Stehouwer, L. E. A., Zwerver, A.-M. J., Philips, S. G. J., Mądzik, M. T., Xue, X., Zheng, G., Lodari, M., Amitonov, S. V., Samkharadze, N., Sammak, A., Vandersypen, L. M. K., Rahman, R., Coppersmith, S. N., Moutanabbir, O., Friesen, M., & Scappucci, G. (2022). Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots. Nature Communications, 13(1), 7730 (8 pages).
  - Burt, D., Joo, H.-J., Kim, Y., Jung, Y., Chen, M., Luo, M., Kang, D.-H., Assali, S., Zhang, L., Son, B., Fan, W., Moutanabbir, O., Ikonic, Z., Tan, C. S., Huang, Y.-C., & Nam, D. (2022). Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain. Applied Physics Letters, 120(20), 7 pages.
  - Attiaoui, A., Fettu, G., Mukherjee, S., Bauer, M., & Moutanabbir, O. (2022). Electronic signature of subnanometer interfacial broadening in heterostructures. Nano Letters, 22(17), 7080-7086.
  - Badawy, G., Zhang, B., Rauch, T., Momand, J., Koelling, S., Jung, J., Gazibegovic, S., Moutanabbir, O., Kooi, B. J., Botti, S., Verheijen, M. A., Frolov, S. M., & Bakkers, E. P. A. M. (2022). Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires. Advanced Science, 9(12), 2105722 (8 pages).
  - Kim, Y., Assali, S., Burt, D., Jung, Y., Joo, H.-J., Chen, M., Ikonic, Z., Moutanabbir, O., & Nam, D. (2022). Enhanced GeSn Microdisk Lasers Directly Released on Si. Advanced Optical Materials, 10(2), 2101213 (7 pages).
  - Kim, Y.-M., Assali, S., Jung, Y., Burt, D., Zhang, L., Joo, H.-J., Koelling, S., Chen, M., Luo, L., Atalla, M. R. M., Ikonic, Z., Tan, C. S., Moutanabbir, O., & Nam, D. (2022). Evolution of Gesn Lasers Towards Photonic Integration into Practical Applications. Meeting abstracts, MA2022-02(32), 1167-1167.
  - Luo, L., Assali, S., Atalla, M. R. M., Koelling, S., Attiaoui, A., Daligou, G., Martí, S., Arbiol, J., & Moutanabbir, O. (2022). Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires. ACS Photonics, 9(3), 914-921.
  - Carnio, B. N., Attiaoui, A., Assali, S., Moutanabbir, O., & Elezzabi, A. Y. (2022). Extracting the complex refractive index of an ultrathin layer at terahertz frequencies with no prior knowledge of substrate absorption loss. IEEE Transactions on Terahertz Science and Technology, 12(4), 385-391.
  - Singh, S., Mukherjee, S., Mukherjee, S., Assali, S., Luo, L., Das, S., Moutanabbir, O., & Ray, S. K. (2022). Ge-Ge0.92Sn0.08 core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication. Applied Physics Letters, 120(17).
  - Tan, J. Z. J., Burt, D., Kim, Y.-M., Joo, H.-J., Chen, M., Shi, X., Zhang, L., Tan, C. S., Lim, K. Y. T., Quek, E., Huang, Y.-C., Assali, S., Moutanabbir, O., & Nam, D. (2022). Gesn Bonding Technology for Integrated Laser-on-Chip Photonics. Meeting abstracts, MA2022-02(32), 1177-1177.
  - Joo, H.-J., Kim, Y., Burt, D., Jung, Y., Zhang, L., Chen, M., Luo, M., Parluhutan, S. J., Kang, D.-H., Lee, C., Assali, S., Son, B., Ikonic, Z., Moutanabbir, O., Cho, Y.-H., Tan, C. S., Huang, Y.-C., & Nam, D. (2022). Gesnoi Laser Technology for Photonic-Integrated Circuits. ECS Meeting Abstracts, MA2022-02(32), 1168-1168.
  - Schellingerhout, S. G., de Jong, E. J., Gomanko, M., Guan, X., Jiang, Y., Hoskam, M. S. M., Jung, J., Koelling, S., Moutanabbir, O., Verheijen, M. A., Frolov, S. M., & Bakkers, E. P. A. M. (2022). Growth of PbTe nanowires by molecular beam epitaxy. Materials for Quantum Technology, 2(1), 015001.
  - Atalla, M. R. M., Assali, S., Koelling, S., Attiaoui, A., & Moutanabbir, O. (2022). High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response. ACS Photonics, 9(4), 1425-1433.
  - Moutanabbir, O., Del Vecchio, P., Attiaoui, A., Fettu, G., Rotaru, N., & Assali, S. (2022). (Invited) Optoelectronic Quantum Information Processing: An All-Group IV Integrated Platform. ECS Meeting Abstracts, MA2022-02(32), 1207-1207.
  - Moutanabbir, O., & Fortin-Deschênes, M. (2022). (Invited) Van Der Waals Growth and in Situ Studies of Two-Dimensional Pnictogens. Meeting abstracts, MA2022-01(12), 853-853.
  - Assali, S., Attiaoui, A., Koelling, S., Atalla, M. R. M., Kumar, A., Nicolas, J., Chowdhury, F. A., Lemieux-Leduc, C., & Moutanabbir, O. (2022). Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics. Journal of Applied Physics, 132(19), 11 pages.
  - Jung, Y., Burt, D., Zhang, L., Kim, Y., Joo, H.-J., Chen, M., Assali, S., Moutanabbir, O., Tan, C. S., & Nam, D. (2022). Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density. Photonics Research, 10(6), 6 pages.
  - Assali, S., Koelling, S., Abboud, Z., Nicolas, J., Attiaoui, A., & Moutanabbir, O. (2022). 500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon. Journal of Applied Physics, 132(17), 175304 (9 pages).
  - Abdi, S., Assali, S., Atalla, M. R. M., Koelling, S., Warrender, J. M., & Moutanabbir, O. (2022). Recrystallization and interdiffusion processes in laser-annealed strain-relaxed metastable Ge0.89Sn0.11. Journal of Applied Physics, 131(10), 105304 (9 pages).
  - Andelic, M., Pofelski, A., Assali, S., Koelling, S., Luo, L., Moutanabbir, O., & Botton, G. A. (2022). Structural and Chemical Characterization of Ge/GeSn Core/Shell Nanowires. Microscopy and Microanalysis, 28(S1), 2430-2431.
  - Perla, P., Faustmann, A., Kolling, S., Zellekens, P., Deacon, R., Fonseka, H. A., Kolzer, J., Sato, Y., Sanchez, A. M., Moutanabbir, O., Ishibashi, K., Grutzmacher, D., Lepsa, M. I., & Schapers, T. (2022). Te-doped selective-area grown InAs nanowires for superconducting hybrid devices. Physical Review Materials, 6(2), 024602 (9 pages).
  - Carnio, B. N., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2022). The Coming Age of Pnictide and Chalcogenide Ternary Crystals in the Terahertz Frequency Regime. IEEE Transactions on Terahertz Science and Technology, 12(5), 433-445.
- 2021
  - Atalla, M. R. M., Assali, S., Attiaoui, A., Lemieux-Leduc, C., Kumar, A., Abdi, S., & Moutanabbir, O. (2021). All-Group IV Transferable Membrane Mid-Infrared Photodetectors. Advanced Functional Materials, 31(3), 9 pages.
  - Mukherjee, S., Assali, S., & Moutanabbir, O. (2021). Atomic Pathways of Solute Segregation in the Vicinity of Nanoscale Defects. Nano Letters, 21(23), 9882-9888.
  - Groell, L., Attiaoui, A., Assali, S., & Moutanabbir, O. (2021). Combined iodine- and sulfur-based treatments for an effective passivation of GeSn surface. Journal of Physical Chemistry C, 125(17), 9516-9525.
  - Rathore, J., Nanwani, A., Mukherjee, S., Das, S., Moutanabbir, O., & Mahapatra, S. (2021). Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn. Journal of Physics D: Applied Physics, 54(18), 185105 (10 pages).
  - Mukherjee, S., Wajs, M., De la Mata, M., Givan, U., Senz, S., Arbiol, J., Francoeur, S., & Moutanabbir, O. (2021). Disentangling phonon channels in nanoscale heat transport. Physical Review B, 104(7), 075429 (7 pages).
  - Joo, H.-J., Kim, Y., Burt, D., Jung, Y., Zhang, L., Chen, M., Parluhutan, S. J., Kang, D.-H., Lee, C., Assali, S., Ikonic, Z., Moutanabbir, O., Cho, Y.-H., Tan, C. S., & Nam, D. (2021). 1D photonic crystal direct bandgap GeSn-on-insulator laser. Applied Physics Letters, 119(20), 201101 (6 pages).
  - Attiaoui, A., Bouthillier, E., Daligou, G., Kumar, A., Assali, S., & Moutanabbir, O. (2021). Extended Short-Wave Infrared Absorption in Group-IV Nanowire Arrays. Physical Review Applied, 15(1), 014034 (11 pages).
  - Moutanabbir, O., & Fortin-Deschênes, M. (2021). (Invited) Two-Dimensional Pnictogens: Van Der Waals Growth, Stability, and Phase Transformation. ECS Meeting Abstracts, MA2021-01(14), 655-655.
  - Assali, S., Dijkstra, A., Attiaoui, A., Bouthillier, É., Haverkort, J. E. M., & Moutanabbir, O. (2021). Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge1-xSnx Semiconductors. Physical Review Applied, 15(2), 13 pages.
  - An, Q., Moutanabbir, O., & Guo, H. (2021). Moire patterns of twisted bilayer antimonene and their structural and electronic transition. Nanoscale, 132(31), 13427-13436.
  - Moutanabbir, O., Assali, S., Gong, X., O'Reilly, E., Broderick, C. A., Marzban, B., Witzens, J., Du, W., Yu, S. Q., Chelnokov, A., Buca, D., & Nam, D. (2021). Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors. Applied Physics Letters, 118(11), 110502 (10 pages).
- 2020
  - Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., & De Seta, M. (2020). Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering. Physical Review Applied, 13(4), 14 pages.
  - Mukherjee, S., Attiaoui, A., Bauer, M., & Moutanabbir, O. (2020). 3D Atomic Mapping of Interfacial Roughness and Its Spatial Correlation Length in Sub-10 nm Superlattices. ACS Applied Materials and Interfaces, 12(1), 1728-1736.
  - Bouthillier, É., Assali, S., Nicolas, J., & Moutanabbir, O. (2020). Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors. Semiconductor Science and Technology, 35(9), 9 pages.
  - Nicolas, J., Assali, S., Mukherjee, S., Lotnyk, A., & Moutanabbir, O. (2020). Dislocation Pipe Diffusion and Solute Segregation during the Growth of Metastable GeSn. Crystal Growth and Design, 20(5), 3493-3498.
  - An, Q., Fortin-Deschênes, M., Yu, G., Moutanabbir, O., & Guo, H. (2020). Effects of short-range order and interfacial interactions on the electronic structure of two-dimensional antimony-arsenic alloys. Journal of Applied Physics, 127(2), 12 pages.
  - Fettu, G., Attiaoui, A., Samik, M., Bauer, M., & Moutanabbir, O. (2020). Electronic and Optical Properties of Short-Period Si/Sige Superlattices: Effects of Interfacial Atomic-Scale Roughness. ECS Meeting Abstracts, MA2020-01(G01 : Sili), 1305-1305.
  - Persichetti, L., Montanari, M., Ciano, C., Di Gaspare, L., Ortolani, M., Baldassarre, L., Zoellner, M., Mukherjee, S., Moutanabbir, O., Capellini, G., Virgilio, M., & De Seta, M. (2020). Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells. Crystals, 10(3), 179 (13 pages).
  - Cousineau, É., Mukherjee, S., Simone, A., Nicolas, J., & Moutanabbir, O. (2020). Lattice Vibrational Modes in Epitaxial Metastable Germanium-Tin Semiconductors. ECS Meeting Abstracts, MA2020-01(22), 1320-1320.
  - Fortin-Deschenes, M., Zschiesche, H., Mente, T. O., Locatelli, A., Jacobberger, R. M., Genuzio, F., Lagos, M. J., Biswas, D., Jozwiak, C., Miwa, J. A., Ulstrup, S., Bostwick, A., Rotenberg, E., Arnold, M. S., Botton, G. A., & Moutanabbir, O. (2020). Pnictogens allotropy and phase transformation during van der waals growth. Nano Letters, 20(11), 8258-8266.
  - von den Driesch, N., Wirths, S., Troitsch, R., Mussler, G., Breuer, U., Moutanabbir, O., Grutzmacher, D., & Buca, D. (2020). Thermally activated diffusion and lattice relaxation in (Si)GeSn materials. Physical Review Materials, 4(3), 033604 (6 pages).
  - Abdi, S., Atalla, M., Assali, S., Kumar, A., Groell, L., Koelling, S., & Moutanabbir, O. (2020). Towards Ultra-Low Specific Contact Resistance on P-Type and N-Type Narrow Bandgap GeSn Semiconductors. ECS Meeting Abstracts, MA2020-01(22), 1322-1322.
  - Luo, L., Assali, S., Atalla, M. R. M., Koelling, S., & Moutanabbir, O. (2020). Tunable Shortwave Infrared and Midwave Infrared Optoelectronics in Germanium/Germanium Tin Core/Shell Nanowires. Meeting abstracts, MA2020-01(22), 1321-1321.
  - Nateghi, N., Samik, M., Cardinal, D., Jacobberger, R. M., Way, A. J., de la Mata, M., Martel, R., Desjardins, P., Arbiol, J., Arnold, M. S., & Moutanabbir, O. (2020). Van Der Waals Growth of III-V Semiconductors on Graphene. ECS Meeting Abstracts, MA2020-01(B06 : 2D L), 835-835.
  - Del Vecchio, P., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. (2020). Vanishing Zeeman energy in a two-dimensional hole gas. Physical Review B, 102(11), 12 pages.
- 2019
  - Jacobberger, R. M., Murray, E. A., Fortin-Deschênes, M., Göltl, F., Behn, W. A., Krebs, Z. J., Levesque, P. L., Savage, D. E., Smoot, C., Lagally, M. G., Desjardins, P., Martel, R., Brar, V., Moutanabbir, O., Mavrikakis, M., & Arnold, M. S. (2019). Alignment of semiconducting graphene nanoribbons on vicinal Ge(001). Nanoscale, 11(11), 4864-4875.
  - Fortin-Deschênes, M., Waller, O., An, Q., Lagos, M. J., Botton, G. A., Guo, H., & Moutanabbir, O. (2019). 2D Antimony–Arsenic Alloys. Small, 16(3), 7 pages.
  - Fortin-Deschênes, M., Jacobberger, R. M., Deslauriers, C.-A., Waller, O., Bouthillier, É., Arnold, M. S., & Moutanabbir, O. (2019). Dynamics of Antimonene-Graphene Van Der Waals Growth. Advanced Materials, 31(21), e1900569 (7 pages).
  - Assali, S., Nicolas, J., & Moutanabbir, O. (2019). Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation. Journal of Applied Physics, 125(2).
  - Ciano, C., Di Gaspare, L., Montanari, M., Persichetti, L., Baldassarre, L., Ortolani, M., Capellini, G., Skibitzki, O., Zöllner, M., Faist, J., Scalari, G., Stark, D., Paul, D. J., Rew, K., Moutanabbir, O., Mukherjee, S., Grange, T., Birner, S., Virgilio, M., & De Seta, M. (2019). n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser. ECS Transactions, 93(1), 63-66.
  - Assali, S., Elsayed, M., Nicolas, J., Liedke, M. O., Wagner, A., Butterling, M., Krause-Rehberg, R., & Moutanabbir, O. (2019). Vacancy complexes in nonequilibrium germanium-tin semiconductors. Applied Physics Letters, 114(25), 6 pages.
- 2018
  - Assali, S., Nicolas, J., Mukherjee, S., Dijkstra, A., & Moutanabbir, O. (2018). Atomically uniform Sn-rich GeSn semiconductors with 3.0-3.5 µm room-temperature optical emission. Applied Physics Letters, 112(25), 5 pages.
  - Mamun, M. A., Tapily, K., Moutanabbir, O., Baumgart, H., & Elmustafa, A. A. (2018). Effect of hydrogen implantation on the mechanical properties of AlN throughout ion-induced splitting. ECS Journal of Solid State Science and Technology, 7(4), P180-P184.
  - Attiaoui, A., Wirth, S., Blanchard-Dionne, A.-P., Meunier, M., Hartmann, J. M., Buca, D., & Moutanabbir, O. (2018). Extreme IR absorption in group IV-SiGeSn core-shell nanowires. Journal of Applied Physics, 123(22), 13 pages.
  - Mukherjee, S., Assali, S., & Moutanabbir, O. (2018). Group IV nanowires for carbon-free energy conversion. Semiconductors and Semimetals, 98, 151-229.
  - Mukherjee, S., Nateghi, N., Jacobberger, R. M., Bouthillier, E., de la Mata, M., Arbiol, J., Coenen, T., Cardinal, D., Levesque, P., Desjardins, P., Martel, R., Arnold, M. S., & Moutanabbir, O. (2018). Growth and luminescence of polytypic InP on epitaxial graphene. Advanced Functional Materials, 28(8), 1705592.
  - Fortin-Deschenes, M., & Moutanabbir, O. (2018). Recovering the semiconductor properties of the epitaxial group V 2D materials antimonene and arsenene. Journal of Physical Chemistry C, 122(16), 9162-9168.
  - Mukherjee, S., Givan, U., Senz, S., De la Mata, M., Arbiol, J., & Moutanabbir, O. (2018). Reduction of thermal conductivity in nanowires by combined engineering of crystal phase and isotope disorder. Nano Letters, 18(5), 3066-3075.
  - Sahamir, S. R., Said, S. M., Sabri, M. F. M., Mahmood, M. S., Bin Kamarudin, M. A., & Moutanabbir, O. (2018). Studies on relation between columnar order and electrical conductivity in HAT6 discotic liquid crystals using temperature-dependent Raman spectroscopy and DFT calculations. Liquid Crystals, 45(4), 522-535.
  - Assali, S., Attiaoui, A., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2018). TEOS layers for low temperature processing of group IV optoelectronic devices. Journal of Vacuum Science & Technology B, 36(6), 8 pages.
- 2017
  - Jung, D., Faucher, J., Mukherjee, S., Akey, A., Ironside, D. J., Cabral, M., Sang, X., Lebeau, J., Bank, S. R., Buonassisi, T., Moutanabbir, O., & Lee, M. L. (2017). Highly tensile-strained Ge/InAlAs nanocomposites. Nature Communications, 8(1), 14204 (7 pages).
  - Mukherjee, S., Kodali, N., Isheim, D., Wirths, S., Hartmann, J. M., Buca, D., Seidman, D. N., & Moutanabbir, O. (2017). Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors. Physical Review B, 95(16), 5 pages.
  - Fortin-Deschenes, M., Waller, O., Mentes, T. O., Locatelli, A., Mukherjee, S., Genuzio, F., Levesque, P. L., Hebert, A., Martel, R., & Moutanabbir, O. (2017). Synthesis of antimonene on germanium. Nano Letters, 17(8), 4970-4975.
  - Abboud, Z., & Moutanabbir, O. (2017). Temperature-dependent in situ studies of volatile molecule trapping in low temperature-activated Zr alloy-based getters. Journal of Physical Chemistry C, 121(6), 3381-3396.
- 2016
  - Fortin-Deschenes, M., Levesque, P. L., Martel, R., & Moutanabbir, O. (2016). Dynamics and mechanisms of exfoliated black phosphorus sublimation. Journal of Physical Chemistry Letters, 7(9), 1667-1674.
  - Moutanabbir, O., Isheim, D., Zugang, M., & Seidman, D. N. (2016). Evidence of sub-10 nm aluminum-oxygen precipitates in silicon. Nanotechnology, 27(20), 7 pages.
  - Mukherjee, S., Watanabe, H., Isheim, D., Seidman, D. N., & Moutanabbir, O. (2016). Laser-assisted field evaporation and three-dimensional atom-by-atom mapping of diamond isotopic homojunctions. Nano Letters, 16(2), 1335-1344.
  - Mukherjee, S., Isheim, D., Seidman, D. N., & Moutanabbir, O. (2016). Mapping isotopes in nanoscale and quantum materials using atom probe tomography. Microscopy and Microanalysis, 22(S3), 652-653.
  - Chagnon, D., Pippel, E., Senz, S., & Moutanabbir, O. (2016). Metal Seed Loss Throughout the Nanowire Growth: Bulk Trapping and Surface Mass Transport. Journal of Physical Chemistry C, 120(5), 2932-2940.
- 2015
  - Fournier-Lupien, J. H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J. M., Desjardins, P., Buca, D., & Moutanabbir, O. (2015). Erratum: Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 106(17).
  - Mukherjee, S., Givan, U., Senz, S., Bergeron, A., Francoeur, S., De La Mata, M., Arbiol, J., Sekiguchi, T., Itoh, K. M., Isheim, D., Seidman, D. N., & Moutanabbir, O. (2015). Phonon Engineering in Isotopically Disordered Silicon Nanowires. Nano Letters, 15(6), 3885-3893.
  - Scheerschmidt, K., & Moutanabbir, O. (2015). Tracking atomic processes throughout the formation of heteroepitaxial interfaces. Crystal Research and Technology, 50(6), 490-498.
- 2014
  - Xiong, G., Moutanabbir, O., Reiche, M., Harder, R., & Robinson, I. (2014). Coherent X-ray diffraction imaging and characterization of strain in silicon-on-insulator nanostructures. Advanced Materials, 26(46), 7747-7763.
  - Balois, M. V., Hayazawa, N., Tarun, A., Kawata, S., Reiche, M., & Moutanabbir, O. (2014). Direct optical mapping of anisotropic stresses in nanowires using transverse optical phonon splitting. Nano Letters, 14(7), 3793-3798.
  - Dadwal, U., Kumar, P., Moutanabbir, O., Reiche, M., & Singh, R. (2014). Effect of implantation temperature on the H-induced microstructural damage in AlN. Journal of Alloys and Compounds, 588, 300-304.
  - Attiaoui, A., & Moutanabbir, O. (2014). Indirect-to-direct band gap transition in relaxed and strained Ge 1-x-ySixSny ternary alloys. Journal of Applied Physics, 116(6).
  - Lee, S.-M., Pippel, E., Moutanabbir, O., Kim, J.-H., Lee, H.-J., & Knez, M. (2014). In Situ Raman Spectroscopic Study of Al-Infiltrated Spider Dragline Silk under Tensile Deformation. ACS Applied Materials & Interfaces, 6(19), 16827-16834.
  - Fournier-Lupien, J.-H., Chagnon, D., Lévesque, P., AlMutairi, A.A. A., Wirths, S., Pippel, E., Mussler, G., Hartmann, J.-M., Mantl, S., Buca, D., & Moutanabbir, O. (2014). In Situ Studies of Germanium-Tin and Silicon-Germanium-Tin Thermal Stability. ECS Meeting Abstracts, MA2014-02(35), 1846-1846.
  - Moutanabbir, O. (2014). Invited: Heterointegration of Semiconductors: Challenges and Opportunities. Meeting abstracts, MA2014-02(34), 1719-1719.
  - Chagnon, D., Isik, D., Levesque, P. L., Lewis, F., Caza, M.-È., Le, X. T., Poirier, J.-S., Michel, D., Larger, R., & Moutanabbir, O. (2014). Materials Issues in Hermetic Wafer Level Packaging Using Au Thermocompression and Au-Sn Transient Liquid Phase Bonding. Meeting abstracts, MA2014-02(34), 1741-1741.
  - Attiaoui, A., & Moutanabbir, O. (2014). Optical and Electronic Properties of GeSn and GeSiSn Heterostructures and Nanowires. ECS Meeting Abstracts, MA2014-02(35), 1843-1843.
  - Blumtritt, H., Isheim, D., Senz, S., Seidman, D. N., & Moutanabbir, O. (2014). Preparation of nanowire specimens for laser-assisted atom probe tomography. Nanotechnology, 25(43).
  - Chen, P., Zhang, J. J., Feser, J. P., Pezzoli, F., Moutanabbir, O., Cecchi, S., Isella, G., Gemming, T., Baunack, S., Chen, G., Schmidt, O. G., & Rastelli, A. (2014). Thermal transport through short-period SiGe nanodot superlattices. Journal of Applied Physics, 115(4).
- 2013
  - Moutanabbir, O., Isheim, D., Blumtritt, H., Senz, S., Pippel, E., & Seidman, D. N. (2013). Colossal injection of catalyst atoms into silicon nanowires. Nature, 496(7443), 78-82.
  - Essig, S., Moutanabbir, O., Wekkeli, A., Nahme, H., Oliva, E., Bett, A. W., & Dimroth, F. (2013). Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity. Journal of Applied Physics, 113(20).
  - Fournier-Lupien, J.-H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J. M., Desjardins, P., Buca, D., & Moutanabbir, O. (2013). Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 103(26).
  - Tarun, A., Hayazawa, N., Balois, M. V., Kawata, S., Reiche, M., & Moutanabbir, O. (2013). Stress redistribution in individual ultrathin strained silicon nanowires: a high-resolution polarized Raman study. New Journal of Physics, 15(5).
- 2012
  - Qin, Y., Vogelgesang, R., Eßlinger, M., Sigle, W., Van Aken, P., Moutanabbir, O., & Knez, M. (2012). Bottom-up tailoring of plasmonic nanopeapods making use of the periodical topography of carbon nanocoil templates. Advanced Functional Materials, 22(24), 5157-5165.
  - Moutanabbir, O., Ratto, F., Heun, S., Scheerschmidt, K., Locatelli, A., & Rosei, F. (2012). Dynamic Probe of Atom Exchange During Monolayer Growth. Physical Review B, 85(20).
  - Tong, X., Qin, Y., Guo, X., Moutanabbir, O., Ao, X., Pippel, E., Zhang, L., & Knez, M. (2012). Enhanced catalytic activity for methanol electro-oxidation of uniformly dispersed nickel oxide nanoparticles-carbon nanotube hybrid materials. Small, 8(22), 3390-3395.
  - Hahnel, A., Reiche, M., Moutanabbir, O., Blumtritt, H., Geisler, H., Hontschel, J., & Engelmann, H.-J. (2012). Improving accuracy and precision of strain analysis by energy-filtered nanobeam electron diffraction. Microscopy and Microanalysis, 18(1), 229-40.
- 2011
  - Moutanabbir, O. (2011). Group-IV Epitaxial Quantum Dots: Growth Subtleties Unveiled Through Stable Isotope Nanoengineering. Science of Advanced Materials, 3(3), 312-321.
  - Tarun, A., Hayazawa, N., Ishitobi, H., Kawata, S., Reiche, M., & Moutanabbir, O. (2011). Mapping the "forbidden" transverse-optical phonon in single strained silicon (100) nanowire. Nano Letters, 11(11), 4780-4788.
Communications de conférence (52)
- 2023
  - Carnio, B. N., Zhang, M., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (juillet 2023). High terahertz frequency generation and detection using crystals exhibiting second-order nonlinear effects [Communication écrite]. Optica Nonlinear Optics Topical Meeting 2023, Honolulu, Hawaii.
  - Andelic, M., Pofelski, A., Koelling, S., Assali, S., Luo, L., Moutanabbir, O., & Botton, G. (avril 2023). Local Bandgap Measurement of Core/Shell Ge/GeSn Nanowires Employing Electron Energy Loss Spectroscopy in Scanning Transmission Electron Microscopy [Communication écrite]. MRS Spring Meeting, San Francisco, California.
- 2022
  - Carnio, B. N., Attiaoui, A., Assali, S., Moutanabbir, O., Elezzabi, A. Y., Sadwick, L. P., & Yang, T. (janvier 2022). A method based on complementary transmission and reflection measurements for extracting the optical properties of a thin film [Communication écrite]. Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XV, San Francisco, California, United States.
  - Joo, H.-J., Kim, Y., Burt, D., Yung, Y., Zhang, L., Chen, M., Parluhutan, S. J., Kang, D.-H., Lee, C., Assali, S., Ikonic, Z., Moutanabbir, O., Cho, Y.-H., Tan, C. S., & Nam, D. (janvier 2022). 1D photonic crystal GeSn-on-insulator nanobeam laser [Communication écrite]. Silicon Photonics XVII, San Francisco, CA, USA (9 pages).
  - Del Vecchio, P., & Moutanabbir, O. (mars 2022). Electric-dipole spin resonance for light-holes in germanium quantum well [Communication écrite]. 2022 APS March Meeting, Chicago, Illinois.
  - Del Vecchio, P., & Moutanabbir, O. (mai 2022). Electric-Dipole Spin Resonance for Light-Holes in Germanium Quantum Well [Présentation]. Dans MRS Spring Meeting, En ligne / Online.
  - Carnio, B. N., Attiaoui, A., Assali, S., Moutanabbir, O., & Elezzabi, A. Y. (juillet 2022). Extracting the linear terahertz properties of thin films using complementary transmission and reflection measurements: Applied to GeSn thin films [Communication écrite]. International Conference on Ultrafast Phenomena (UP) 2022, Montreal, Quebec.
  - Attiaoui, A., Assali, S., Luo, L., Daligou, G., Atala, M., Koelling, S., & Moutanabbir, O. (juillet 2022). Group-IV GeSn nanophotonics [Communication écrite]. IEEE Photonics Society Summer Topicals Meeting Series (SUM 2022), Cabo San Lucas, Mexico (2 pages).
  - Kim, Y., Assali, S., Burt, D., Jung, Y., Joo, H.-J., Chen, M., Ikonic, Z., Moutanabbir, O., & Nam, D. (janvier 2022). Improved GeSn microdisk lasers directly sitting on Si [Communication écrite]. Silicon Photonics XVII, San Francisco, CA, USA (7 pages).
  - Losert, M. P., Wuetz, B. P., Koelling, S., Stehouwer, L., Zwerver, A.-M. J., Philips, S. G., Madzik, M. G., Xue, X., Zheng, G., Lodari, M., Amitonov, S. V., Samkharadze, N., Sammak, A., Vanderspyen, L., Rahman, R., Coppersmith, S. N., Moutanabbir, O., Friesen, M. G., & Scappucci, G. (mars 2022). Increasing the valley splitting in Si/SiGe heterostructures by exploiting atomic concentration fluctuations [Communication écrite]. 2022 APS March Meeting, Chicago, Illinois.
  - Chen, M., Jung, Y., Burt, D., Kim, Y., Joo, H.-J., Zhang, L., Assali, S., Moutanabbir, O., Tan, C. S., & Nam, D. (mai 2022). Low-Threshold Lasing in GeSnOI Microdisk Lasers with Reduced Defect Density [Communication écrite]. Conference on Lasers and Electro-Optics (CLEO 2022), San José, CA, USA (2 pages).
  - Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., & De Seta, M. (septembre 2022). Microscopic modeling of interface roughness scattering and application to the simulation of quantum cascade lasers [Communication écrite]. International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2022), Turin, Italy.
  - Atalla, M., Assali, S., Koelling, S., Daligou, G., Attiaoui, A., Luo, L., Lemieux-Leduc, C., Abdi, S., & Moutanabbir, O. (mai 2022). Mid-infrared silicon-integrated high-bandwidth GeSn PIN photodetectors and LEDs [Communication écrite]. Conference on Lasers and Electro-Optics (CLEO 2022), San José, CA, USA (2 pages).
  - Luo, L., Atalla, M. R. M., Assali, S., Koelling, S., Attiaoui, A., & Moutanabbir, O. (novembre 2022). Photodetection from SWIR to MWIR with Ge/GeSn core/shell nanowires [Communication écrite]. IEEE Photonics Conference (IPC 2022), Vancouver, BC, Canada (2 pages).
  - Daligou, G., Assali, S., Attiaoui, A., Bouthillier, É., & Moutanabbir, O. (juillet 2022). Radiative carrier lifetime in GeSn mid-infrared emitters [Communication écrite]. IEEE Photonics Society Summer Topicals Meeting Series (SUM 2022), Cabo San Lucas, Mexico (2 pages).
  - Burt, D., Jooa, H.-J., Kim, Y., Jung, Y., Chen, M., Luo, M., Kang, D.-H., Assali, S., Zhang, L., Son, B., Fan, W., Moutanabbir, O., Ikonic, Z., Tan, C. S., Huang, Y.-C., & Nam, D. (janvier 2022). Tensile-strained direct bandgap GeSnOI micro/nanostructures by harnessing residual strain [Communication écrite]. Silicon Photonics XVII.
- 2021
  - Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., De Seta, M., Belyanin, A. A., & Smowton, P. M. (mars 2021). Atomic-scale modeling of interface roughness scattering in quantum cascade lasers [Communication écrite]. Novel In-Plane Semiconductor Lasers XX.
  - Atalla, M. R. M., Assali, S., Attiaoui, A., Lemieux-Leduc, C., Kumar, A., Abdi, S., & Moutanabbir, O. (mai 2021). GeSn membrane mid-infrared photodetectors [Communication écrite]. Conference on Lasers and Electro-Optics (CLEO 2021), San José, CA, USA (2 pages).
  - Fettu, G., Sipe, J. E., Moutanabbir, O., Agio, M., Soci, C., & Sheldon, M. T. (août 2021). Optical injection of spin current in direct bandgap GeSn [Présentation]. Dans SPIE Nanoscience + Engineering, San Diego, California, United States.
  - Attiaoui, A., Assali, S., Del-Vecchio, P., Nicolas, J., & Moutanabbir, O. (mai 2021). Tuning Light-Hole Optical Transition in Highly Tensile Strained Germanium Quantum Wells [Communication écrite]. Conference on Lasers and Electro-Optics (CLEO 2021), San José, CA, USA (2 pages).
- 2020
  - Assali, S., Attiaoui, A., Atalla, M., Alain, D., Kumar, A., Mukherjee, S., Nicolas, J., Koelling, S., & Moutanabbir, O. (octobre 2020). Engineering SiGeSn Semiconductors for MIR and THz Opto-electronic Devices [Communication écrite]. ECS Meeting Abstracts.
  - Assali, S., Attiaoui, A., Atalla, M. R. M., Dijkstra, A., Aashish, K., Mukherjee, S., Abdi, S., & Moutanabbir, O. (mai 2020). Epitaxial GeSn and its integration in MIR optoelectronics [Communication écrite]. Science and Innovations 2020 (CLEO), Washington, D.C..
  - Groell, L., Abdi, S., Assali, S., Atalla, M., Attiaoui, A., & Moutanabbir, O. (mai 2020). Germanium Tin Surface Passivation and Its Effect on the Optoelectronic Performances [Communication écrite]. 237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020), Montreal, Canada.
  - Fortin-Deschênes, M., & Moutanabbir, O. (mai 2020). (Invited) Growth of Van Der Waals Materials: New Insights from Real-Time Studies [Résumé]. 237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020), Montréal, Canada. Publié dans ECS Meeting Abstracts, MA2020-01(B06 : 2D L).
  - Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. (octobre 2020). (Invited) Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale [Communication écrite]. SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9, Honolulu, Hawaii, USA.
  - Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale [Communication écrite]. SiGe, Ge, and Related Compounds: Materials, Processing, and Devices (PRiME 2020). Publié dans ECS Transactions, 98(5).
- 2019
  - Persichetti, L., Ciano, C., Virgilio, M., Montanari, M., Di Gaspare, L., Ortolani, M., Baldassarre, L., Zoellner, M., Skibitzki, O., Stark, D., Scalari, G., Faist, J., Rew, K., Paul, D. J., Mukherjee, S., Moutanabbir, O., Scuderi, M., Nicotra, G., Grange, T., ... Deschler, F. (août 2019). Electron state coupling in asymmetric Ge/SiGe quantum wells (Conference Presentation) [Présentation]. Dans Physical Chemistry of Semiconductor Materials and Interfaces XVIII, San Diego, CA, USA.
  - Moutanabbir, O., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Nicolas, J., Mukherjee, S., & Assali, S. (mai 2019). Germanium-tin semiconductors : a versatile silicon-compatible platform [Communication écrite]. VII Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Kyoto, Japan.
  - Assali, S., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (mai 2019). Germanium-Tin Semiconductors for Silicon-Compatible Mid-Infrared Photonics [Communication écrite]. Conference on Lasers and Electro-Optics, San Jose, California.
  - Montanari, M., Ciano, C., Persichetti, L., Di Gaspare, L., Virgilio, M., Capellini, G., Zoellner, M., Skibitzki, O., Stark, D., Scalari, G., Faist, J., Paul, D. J., Grange, T., Birner, S., Scuderi, M., Nicotra, G., Moutanabbir, O., Mukherjee, S., Baldassarre, L., ... De Seta, M. (septembre 2019). High-Quality n-Type Ge/SiGe Multilayers for THz Quantum Cascade Lasers [Communication écrite]. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019), Paris, France (2 pages).
  - Assali, S., Abdi, S., Atalla, M., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Groell, L., Kumar, A., Luo, L., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (octobre 2019). (Si)GeSn Semiconductors for Integrated Optoelectronics, Quantum Electronics, and More [Résumé]. 236th ECS Meeting, Atlanta, GA. Publié dans ECS Meeting Abstracts, MA2019-02(25).
- 2018
  - Mukherjee, S., Bauer, M., Attiaoui, A., & Moutanabbir, O. (septembre 2018). Atomistic and Optical Properties of Group IV Ultrathin Superlattices [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31).
  - Bouthillier, É., Assali, S., Nicolas, J., & Moutanabbir, O. (septembre 2018). Decoupling Strain and Composition Effects on Ge₁₋YSny Lattice Vibrations [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31).
  - Abboud, Z., Chagnon, D., Assali, S., Fortin-Deschenes, M., Coia, C., & Moutanabbir, O. (septembre 2018). Hermetic Wafer-Level Packaging of Microbolometers for Uncooled Thermal Cameras [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(29).
  - Moutanabbir, O., & Mukherjee, S. (septembre 2018). Isotopically Programmed Group IV Semiconductors: A Versatile Platform for Quantum Technologies [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31).
  - Attiaoui, A., Assali, S., Nicolas, J., & Moutanabbir, O. (septembre 2018). Mapping Strain and Composition Effects on Gesn Band Structure Using Spectroscopic Ellipsometry [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31).
  - Assali, S., Nicolas, J., Mukherjee, S., Bouthillier, É., Attiaoui, A., & Moutanabbir, O. (septembre 2018). Structure and Optoelectronic Properties of Atomically Random Sn-Rich Gesn Semiconductors [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31).
- 2017
  - Fortin-Deschênes, M., Waller, O., Hébert, A., & Moutanabbir, O. (avril 2017). Epitaxial group V 2D materials : growth and electronic properties [Affiche]. Materials Research Society Spring Meeting & Exhibit (MRS 2017), Phoenix, Arizona.
  - Chagnon, D., Abboud, Z., & Moutanabbir, O. (août 2017). In situ monitoring of microstructure and phase changes of AuSn solders for hermetic wafer-level packaging [Affiche]. 18th Canadian Semiconductor Science and Technology Conference (CSSTC 2017), Waterloo, Ont..
  - Mukherjee, S., Nateghi, N., Jacobberger, R., Mata, M., Arbiol, J., Coenen, T., Way, A., Arnold, M., & Moutanabbir, O. (avril 2017). Light emission from InP/graphene hybrid epitaxial structures [Affiche]. Materials Research Society Spring Meeting & Exhibit (MRS 2017), Phoenix, Arizona.
  - Fortin-Deschênes, M., Lévesque, P., Martel, R., & Moutanabbir, O. (avril 2017). Mechanisms and dynamics of two-dimensional black phosphorus sublimation [Affiche]. Materials Research Society Spring Meeting & Exhibit (MRS 2017), Phoenix, Arizona.
- 2015
  - Mukherjee, S., Attiaoui, A., Watanabe, H., Isheim, D., Seidman, D. N., & Moutanabbir, O. (mai 2015). 3D atom-by-atom mapping of emerging group IV semiconductors [Affiche]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec.
  - Collette, M., Moutanabbir, O., & Champagne, A. R. (mai 2015). Electronic transport in silicon nanowires with ordered stacking faults [Affiche]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec.
  - Nateghi, N., Mukherjee, S., Choubak, S., Nguyen, M., Lévesque, P., Martel, R., Desjardins, P., & Moutanabbir, O. (mai 2015). Growth of III-V semiconductors on silicon oxide/silicon using graphene interlayer [Affiche]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec.
  - Fournier-Lupien, J.-H., Chagnon, D., Lévesque, P., Wirths, S., Pippel, E., Mussler, G., Hartmann, J. M., Mantl, S., Desjardins, P., Buca, D., & Moutanabbir, O. (mai 2015). In situ studies of germanium-tin and silicon-germanium-tin dynamics of phase separation [Affiche]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec.
  - Lewis, J. B., Isheim, D., Moutanabbir, O., Floss, C., & Seidman, D. N. (juillet 2015). Standardization and correction of artifacts in atom-probe tomographic analysis of Allende nanodiamonds [Résumé]. 78th Annual Meeting of the Meteoritical Society, Berkeley, Calif. (1 page). Publié dans Meteoritics & Planetary Science, 50(S1).
- 2014
  - Fournier-Lupien, J. H., Chagnon, D., Levesque, P., AlMutairi, A. A., Wirths, S., Pippel, E., Mussler, G., Hartmann, J. M., Mantl, S., Buca, D., & Moutanabbir, O. (octobre 2014). In situ studies of germanium-tin and silicon-germanium-tin thermal stability [Communication écrite]. 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico.
  - Chagnon, D., Isik, D., Levesque, P., Lewis, F., Caza, M.-E., Le, X. T., Poirier, J.-S., Michel, D., Larger, R., & Moutanabbir, O. (juillet 2014). Metal-assisted hermetic wafer-level packaging [Communication écrite]. 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014, Tokyo, Japan.
  - Attiaoui, A., & Moutanabbir, O. (octobre 2014). Optical and electronic properties of GeSn and GeSiSn heterostructures and nanowires [Communication écrite]. 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico.
- 2012
  - Baumgart, H., & Moutanabbir, O. (mai 2012). Heterointegration of compound III-V semiconductors by wafer bonding and layer splitting for optoelectronic applications [Communication écrite]. 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012, Tokyo, Japan.
  - Wright, C., Mamun, M. A., Tapily, K., Moutanabbir, O., Gu, D., Baumgart, H., & Elmustafa, A. A. (mars 2012). Nanomechanical properties of hydrogen implanted AIN for layer transfer by ion-induced splitting [Affiche]. TMS 141st Annual Meeting and Exhibition, Orlando, Fl..
  - Senichev, A., Givan, U., Moutanabbir, O., Talalaev, V., & Werner, P. (mars 2012). Near-field scanning optical microscopy of infrared emitting semiconductor nanostructures [Affiche]. 76th Annual Meeting of the DPG and DPG Spring Meeting, Berlin, Germany.
Chapitres de livre (1)
- 2018
  - Xiong, G., Moutanabbir, O., Reiche, M., Harder, R., & Robinson, I. (2018). Investigating strain in silicon-on-insulator nanostructures by coherent X-ray diffraction. Dans Fan, C., & Zhao, Z. (édit.), Synchrotron radiation in materials science (239-274).

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Moutanabbir, Oussama

Répertoire des expertises

Moutanabbir, Oussama

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Oussama Moutanabbir (163)