Publications à Polytechnique

Ces données sont extraites du Répertoire des publications de l'École Polytechnique de Montréal. La liste ci-dessous contient seulement les publications auxquelles a participé le professeur ou le chercheur depuis son entrée en fonction à l’École. De plus, certaines publications ne sont pas dans cette liste, notamment les notes de cours et les rapports techniques internes plus d'information...
1	Vasilevskiy, D., Masut, R.A., Turenne, S. (2012). Thermoelectric and Mechanical Properties of Novel Hot-Extruded Pbte N-Type Material. Journal of Electronic Materials, 41(6), p. 1057-1061.
2	Kashi, S., Keshavarz, M.K., Vasilevskiy, D., Masut, R.A., Turenne, S. (2012). Effect of Surface Preparation on Mechanical Properties of Ni Contacts on Polycrystalline (Bi(1-X)Sbx)(2)(Te1-Y Se-Y)(3) Alloys. Journal of Electronic Materials, 41(6), p. 1227-1231.
3	Turcotte, S., Beaudry, J.N., Masut, R.A., Desjardins, P., Bentoumi, G., Leonelli, R. (2012). Abnormal Broadening of the Optical Transitions in (Ga,As)N/Gaas Quantum Wells. Physical Review B, 85(3).
4	de Andres, A., Espinosa, A., Prieto, C., Garcia-Hernandez, M., Ramirez-Jimenez, R., Lambert-Milot, S., Masut, R.A. (2011). MnP Films and MnP Nanocrystals Embedded in GaP Epilayers Grown on GaP(001): Magnetic Properties and Local Bonding Structure. Journal of Applied Physics, 109(11), p. 113910.
5	De Andres, A., Ramrez-Jimenez, R., Garcia-Hernandez, M., Lambert-Milot, S., Masut, R.A. (2011). Confinement Effects on the Low Temperature Magnetic Structure of MnP Nanocrystals. Applied Physics Letters, 99(18).
6	Levesque, A., Desjardins, P., Leonelli, R., Masut, R.A. (2011). Temperature Dependence of the Photoluminescence Spectra From InAs(P)/InP Multilayers Containing Thick Quantum Dots: Dot-Size-Dependent Carrier Dynamics. Physical Review. B, Condensed Matter and Materials Physics, 83(23), p. 235304.
7	Andre, C., Vasilevskiy, D., Turenne, S., Masut, R.A. (2011). Increase in the Density of States in N-Type Extruded (Bi(1-x)Sbx)2(Te(1-y)Sey)3 Thermoelectric Alloys. Journal of Physics D: Applied Physics, 44(23), p. 235401.
8	Vasilevskiy, D., Bourbia, O., Gosselin, S., Turenne, S., Masut, R.A. (2011). Nanostructure Characterization of Bismuth Telluride-Based Powders and Extruded Alloys by Various Experimental Methods. Journal of Electronic Materials, 40, p. 1046-1051.
9	Turenne, S., Clin, Th., Vasilevskiy, D., Masut, R.A. (2010). Finite Element Thermomechanical Modeling of Large Area Thermoelectric Generators Based on Bismuth Telluride Alloys. Journal of Electronic Materials, 39(9), p. 1926-1933.
10	Vasilevskiy, D., Dawood, M.S., Masse, J.-P., Turenne, S., Masut, R.A. (2010). Generation of Nanosized Particles During Mechanical Alloying and Their Evolution Through the Hot Extrusion Process in Bismuth-Telluride-Based Alloys. Journal of Electronic Materials, 39(9), p. 1890-1896.
11	Gelinas, G., Lanacer, A., Leonelli, R., Masut, R.A., Poole, P.J. (2010). Carrier Thermal Escape in Families of InAs/InP Self-Assembled Quantum Dots. Physical Review. B, Condensed Matter and Materials Physics, 81(23), p. 235426.
12	Turcotte, S., Larouche, S., Beaudry, J.-N., Martinu, L., Masut, R.A., Desjardins, P., Leonelli, R. (2009). Evidence of Valence Band Perturbations in GaAsN/GaAs(001): Combined Variable-Angle Spectroscopic Ellipsometry and Modulated Photoreflectance Investigation. Physical Review. B, Condensed Matter and Materials Physics, 80(8), p. 085203.
13	Clin, Th., Turenne, S., Vasilevskiy, D., Masut, R.A. (2009). Numerical Simulation of the Thermomechanical Behavior of Extruded Bismuth Telluride Alloy Module. Journal of Electronic Materials, 38(7), p. 994-1001.
14	Andre, C., Vasilevskiy, D., Turenne, S., Masut, R.A. (2009). Extruded Bismuth-Telluride-Based N-Type Alloys for Waste Heat Thermoelectric Recovery Applications. Journal of Electronic Materials, 38(7), p. 1061-1067.
15	Lacroix, C., Lambert-Milot, S., Desjardins, P., Masut, R.A., Menard, D. (2009). Adjusting the Magnetic Properties of Semiconductor Epilayers by the Crystallographic Orientation of Embedded Highly Anisotropic Magnetic Nanoclusters. Journal of Applied Physics, 105(7), p. 07-119.
16	Lambert-Milot, S., Lacroix, C., Menard, D., Masut, R.A., Desjardins, P., Garcia-Hernandez, M., De Andres, A. (2008). Metal-Organic Vapor Phase Epitaxy of Crystallographically Oriented Mnp Magnetic Nanoclusters Embedded in Gap(001). Journal of Applied Physics, 104(8).
17	Turcotte, S., Beaudry, J.N., Masut, R.A., Desjardins, P., Bentoumi, G., Leonelli, R. (2008). Experimental Investigation of the Variation of the Absorption Coefficient With Nitrogen Content in Gaasn and Gainasn Grown on GaAs (001). Journal of Applied Physics, 104(8), p. 083511.
18	Turcotte, S., Larouche, S., Beaudry, J.-N., Martinu, L., Masut, R.A., Desjardins, P., Leonelli, R. (2008). Evidence of Valence Band Perturbations in GaAsN/GaAs(001): a Combined Variable-Angle Spectroscopic Ellipsometry and Modulated Photoreflectance Investigation. ArXiv.Org.
19	Lacroix, C., Lambert-Milot, S., Desjardins, P., Masut, R.A., Menard, D. (2008). Magnetic Anisotropy in Gap(001) Epilayers Containing Mnp Nanoclusters Observed by Angle Dependent Ferromagnetic Resonance Measurements. Journal of Applied Physics, 103(7).
20	Beaudry, J.N., Masut, R.A., Desjardins, P. (2008). Gaas1-Xnx on Gaas(001): Nitrogen Incorporation Kinetics From Trimethylgallium, Tertiarybutylarsine, and 1,1-Dimethylhydrazine Organometallic Vapor-Phase Epitaxy. Journal of Crystal Growth, 310(6), p. 1040-1048.
21	Bentoumi, G., Yaiche, Z., Leonelli, R., Beaudry, J.N., Desjardins, P., Masut, R.A. (2008). Low-Temperature Emission in Dilute Gaasn Alloys Grown by Metalorganic Vapor Phase Epitaxy. Journal of Applied Physics, 103(6).
22	Levesque, A., Shtinkov, N., Masut, R.A., Desjardins, P. (2008). Self-Organization of Inas/Inp Quantum Dot Multilayers: Pseudophase Diagram Describing the Transition From Aligned to Antialigned Structures. Physical Review Letters, 100(4).
23	Vasilevskiy, D., Turenne, S., Masut, R.A. (2008). Thermoelectric Extruded Alloys for Module Manufacturing : 10 Years of Development at École Polytechnique De Montréal. 5th European Conference on Thermoelectrics.
24	Lanacer, A., Shtinkov, N., Desjardins, P., Masut, R.A., Leonelli, R. (2007). Optical Emission From Inas/Inp Self-Assembled Quantum Dots: Evidence for As/P Intermixing. Semiconductor Science and Technology, 22(12), p. 1282-1286.
25	Beaudry, J., Shtinkov, N., Masut, R.A., Desjardins, P., Rioboo, R.J.J. (2007). Compositional Dependence of the Elastic Constants of Dilute GaAs1-XNx Alloys. Journal of Applied Physics, 101(11), p. 113507-1.
26	Timoshevskii, V., Cote, M., Gilbert, G., Leonelli, R., Turcotte, S., Beaudry, J.N., Desjardins, P., Larouche, S., Martinu, L., Masut, R.A. (2006). Experimental and Theoretical Studies of the E+ Optical Transition in Gaasn Alloys. Physical Review B, 74(16).
27	Shtinkov, N., Desjardins, P., Masut, R.A., Côté, M. (2006). Nitrogen Incorporation and Lattice Constant of Strained Dilute GaAs1-Xnx Layers on GaAs (001): an Ab Initio Study. Physical Review B, 7403(3), p. 5211.
28	Shtinkov, N., Desjardins, P., Masut, R.A., Cote, M. (2006). Nitrogen Incorporation and Lattice Constant of Strained Dilute GaAs1-XNx Layers on GaAs (001): an Ab Initio Study. Physical Review. B, Condensed Matter and Materials Physics, 74(3), p. 352111-352118.
29	Vasilevskiy, D., Roy, F., Renaud, E., Masut, R.A., Turenne, S. (2006). Mechanical Properties of the Interface Between Nickel Contact and Extruded (Bi1-XSbx)2(Te1-YSey)3. 25th International Conference on Thermoelectrics, p. 666-669.
30	Lanacer, A., Chabot, J., Côté, M., Leonelli, R., Frankland, D., Masut, R.A. (2005). Raman Study of Optical Phonons in Ultrathin Inas/Inp Single Strained Quantum Wells. Physical Review. B, Condensed Matter and Materials Physics, 7207(7).
31	Cova, P., Poulin, S., Masut, R.A. (2005). X-Ray Photoelectron Spectroscopy and Structural Analysis of Amorphous SiOxNy Films Deposited at Low Temperatures. Journal of Applied Physics, 98(9).
32	Vasilevskiy, D., Frechette, P., Turenne, S., Masut, R.A. (2005). Thermoelectric Properties and Transport Phenomena in (Bi1-XSbx)2(Te1-YSey)3 Quaternary N-Type Alloys Produced by Powder Metallurgy and Extrusion. 2005 24th International Conference on Thermoelectrics (ICT), p. 399-402.
33	Bergeron, D., Shtinkov, N., Masut, R.A., Desjardins, P. (2005). Green's Function Matching Method for One- and Zero-Dimensional Heterostructures. Physical Review. B, Condensed Matter and Materials Physics, 72(24), p. 245308-1.
34	Cova, P., Poulin, S., Grenier, O., Masut, R.A. (2005). A Method for the Analysis of Multiphase Bonding Structures in Amorphous SiOxNy Films. Journal of Applied Physics, 97(7).
35	Chicoine, M., Beaudoin, C., Roorda, S., Masut, R.A., Desjardins, P. (2005). III-V Compliant Substrates Implemented by Nanocavities Introduced by Ion Implantation. Journal of Applied Physics, 97(6).
36	Beaudry, J.-N., Masut, R.A., Desjardins, P., Wei, P., Chicoine, M., Bentoumi, G., Leonelli, R., Schiettekatte, F., Guillon, S. (2004). Organometallic Vapor Phase Epitaxy of GaAs1-XNx Alloy Layers on GaAs(001): Nitrogen Incorporation and Lattice Parameter Variation. Journal of Vacuum Science and Technology. A, Vacuum, Surfaces, and Films, 22(3), p. 771-775.
37	Bentoumi, G., Timoshevskii, V., Madini, N., Cote, M., Leonelli, R., Beaudry, J.N., Desjardins, P., Masut, R. (2004). Evidence for Large Configuration-Induced Band-Gap Fluctuations in GaAs1-XNx Alloys. Physical Review. B, Condensed Matter and Materials Physics, 70(3), p. 35315.1-35315.5.
38	Shtinkiv, N., Desjardins, P., Masut, R.A. (2004). Localized and Extended States in Semiconductor Quantum Wells With Wire-Like Interface Islands. 27th International Conference on the Physics of Semiconductors, p. 953-954.
39	Shtinkov, N., Desjardins, P., Masut, R.A., Vlaev, S.J. (2004). Lateral Confinement and Band Mixing in Ultrathin Semiconductor Quantum Wells With Steplike Interfaces. Physical Review. B, Condensed Matter and Materials Physics, 70(15), p. 155302-1.
40	Shtinkov, N., Turcotte, S., Beaudry, J.N., Desjardins, P., Masut, R.A. (2004). Electronic and Optical Properties of Gaasn/Gaas Quantum Wells: a Tight-Binding Study. Journal of Vacuum Science and Technology. A, Vacuum, Surfaces, and Films, 22(4), p. 1606-1609.
41	Turcotte, S., Shtinkov, N., Desjardins, P., Masut, R.A., Leonelli, R. (2004). Empirical Tight-Binding Calculations of the Electronic Structure of Dilute Iii-V-N Semiconductor Alloys. Journal of Vacuum Science and Technology. A, Vacuum, Surfaces, and Films, 22(3), p. 776-780.
42	Wei, P., Chicoine, M., Gujrathi, S., Schiettekatte, F., Beaudry, J.N., Masut, R., Desjardins, P. (2004). Characterization of GaAs1-XNx Epitaxial Layers by Ion Beam Analysis. Journal of Vacuum Science and Technology. A, Vacuum, Surfaces, and Films, 22(3), p. 908-911.
43	Chicoine, M., Roorda, S., Masut, R.A., Desjardins, P. (2003). Nanocavities in He Implanted InP. Journal of Applied Physics, 94(9), p. 6116-6121.
44	Malikova, L., Pollak, F.H., Masut, R.A., Desjardins, P., Mourokh, L.G. (2003). Temperature Dependent Contactless Electroreflectance Study of Intersubband Transitions in a Self-Assembled InAs/InP (001) Quantum Dot Structure. Journal of Applied Physics, 94(8), p. 4995-4998.
45	Shtinkov, N., Desjardins, P., Masut, R.A. (2003). Empirical Tight-Binding Model for the Electronic Structure of Dilute GaNAs Alloys. Physical Review. B, Condensed Matter and Materials Physics, 67(8), p. 81202-1.
46	Shtinkov, N., Desjardins, P., Masut, R.A. (2003). Lateral Confinement of Carriers in Ultrathin Semiconductor Quantum Wells. Microelectronics Journal: Low Dimensional Structures and Devices Conference (LDSD'2002), 8-13 Dec. 2002, 34(5-8), p. 459-462.
47	Cova, P., Masut, R.A., Grenier, O., Poulin, S. (2002). Effect of Unintentionally Introduced Oxygen on the Electron-Cyclotron Resonance Chemical-Vapor Deposition of SiNx Films. Journal of Applied Physics, 92(1), p. 129-138.
48	Frankland, D., Masut, R.A., Leonelli, R. (2002). Growth and Characterization of InAs on (100) InP Ultrathin Single Quantum Wells Using Tertiarybutylarsine and Tertiarybutylphosphine. Journal of Vacuum Science & Technology. A, Vacuum Surfaces and Films, 20(3), p. 1132-1134.
49	Shtinkov, N., Desjardins, P., Masut, R.A. (2002). Electronic States of Ultrathin InAs/InP (001) Quantum Wells: a Tight-Binding Study of the Effects of Band Offset, Strain, and Intermixing. Physical Review. B, Condensed Matter and Materials Physics, 66(19), p. 195303-1-8.
50	Spila, T., Desjardins, P., Vailionis, A., Kim, H., Taylor, N., Cahill, D.G., Greene, J.E., Guillon, S., Masut, R.A. (2002). Hydrogen-Mediated Quenching of Strain-Induced Surface Roughening During Gas-Source Molecular Beam Epitaxy of Fully-Coherent Si 0.7 Ge 0.3 Layers on Si(001). Journal of Applied Physics, 91(6), p. 3579-3588.
51	Vasilevskiy, D., Sami, A., Simard, J.-M., Masut, R.A. (2002). Influence of Se on the Electron Mobility in Extruded Bi2(Te1-XSex)3 (x <= 0.125) Thermoelectric Alloys. Journal of Applied Physics, 92(5), p. 2610-2613.
52	Raymond, S., Labrie, D., Girard, J.-F., Poirier, S., Awirothananon, S., Poole, P.J., Marchand, H., Desjardins, P., Masut, R.A. (2001). Tuning Og the Electronic Properties of Self-Assembled InAs/InP Quantum Dots by Rapid Thermal Annealing. Semiconductor Quantum Dots II, p. J9.6.1-J9.6.6.
53	Beaudoin M., Desjardins P., Yip R.Y.F., Masut R.A. (2000). Optical and Structural Properties of InAsP/In(Ga)P Multilayers on InP(001): Strained-Layer Multiple Quantum Well Structures and Devices. InP and Related Compounds : Materials, Applications and Devices. Amsterdam: Gordon and Breach Publishing Group.
54	Allard, M., Masut, R.A., Boudreau, M. (2000). Temperature Determination in Optoelectronic Waveguide Modulators. Journal of Lightwave Technology, 18(6), p. 813-818.
55	Beaudoin, M., Desjardins, P., Ait Ouali, A., Brebner, J.L., Yip, R.Y.F., Marchand, H., Isnard, L., Masut, R.A. (2000). Optical Properties and Heterojunction Band Alignment in Fully Coherent Strain-Compensated InAsxP1-x /GayIn1-YP Multilayers on InP(001). Journal of Applied Physics, 87(5), p. 2320-2326.
56	D'arcy Gall, J., Desjardins, P., Petrov, I., Greene, J.E., Paultre, J.E., Masut, R.A., Gujrathi, S.C., Roorda, S. (2000). Epitaxial Metastable Ge1-y Cy (y<=0.02) Alloys Grown on Ge(001) From Hyperthermal Beams: C Incorporation and Lattice Sites. Journal of Applied Physics, 88(1), p. 96-104.
57	Paki, P., Leonelli, R., Isnard, L., Masut, R.A. (2000). Excitons in Ultrathin Inas/Inp Quantum Wells: Interplay Between Extended and Localized States. Journal of Vacuum Science and Technology. A, Vacuum, Surfaces, and Films, 18(3), p. 956-959.
58	Ait Ouali, A., Brebner, J.L., Yip, R.Y.F., Masut, R.A. (1999). Analysis of the Stokes Shift in InAsP/InP and InGaP/InP Multiple Quantum Wells. Journal of Applied Physics, 86(12), p. 6803-6809.
59	Cova, P., Singh, A., Masut, R.A. (1999). Simultaneous Analysis of Current-Voltage and Capacitance- Voltage Characteristics of Metal-Insulator-Semiconductor Diodes With a High Mid-Gap Trap Density. Journal of Applied Physics, 85(9), p. 6530-6538.
60	Paki, P., Leonelli, R., Isnard, L., Masut, R.A. (1999). Exciton Resonances in Ultrathin Inas/Inp Quantum Wells. Applied Physics Letters, 74(10), p. 1445-1447.
61	Paki, P., Leonelli, R., Isnard, L., Masut, R.A. (1999). Optical Properties of Submonolayer Inas/Inp Quantum Dots on Vicinal Surfaces. Journal of Applied Physics, 86(12), p. 6789-6792.
62	Ababou, Y., Masut, R.A., Yelon, A. (1998). Low-Pressure Metalorganic Vapor Phase Epitaxy of Inp on (111) Substrates. Journal of Vacuum Science and Technology. A, Vacuum, Surfaces, and Films, 16(2), p. 790-793.
63	Ait-Ouali, A., Chennouf, A., Yip, R.Y.F., Brebner, J.L., Leonelli, R., Masut, R.A. (1998). Localization of Excitons by Potential Fluctuations and Its Effect on the Stokes Shift in Ingap/Inp Quantum Confined Heterostructures. Journal of Applied Physics, 84(10), p. 5639-5642.
64	Ait-Ouali, A., Yip, R.Y.F., Brebner, J.L., Masut, R.A. (1998). Strain Relaxation and Exciton Localization Effects on the Stokes Shift in Inasxp1-X/Inp Multiple Quantum Wells. Journal of Applied Physics, 83(6), p. 3153-3160.
65	Allard, M., Boudreau, M., Masut, R.a. (1998). Thermal Modelling and Temperature Measurements in Optoelectronic Waveguide Devices. ICAPT '98 : Applications of Photonic Technology 3 :Closing the Gap Between Theory, Development, and Application, p. 478-481.
66	Cova, P., Singh, A., Medina, A., Masut, R.A. (1998). Effect of Doping on the Forward Current-Transport Mechanisms in a Metal-Insulator-Semiconductor Contact to Inp : Zn Grown by Metal Organic Vapor Phase Epitaxy. Solid-State Electronics, 42(4), p. 477-485.
67	Desjardins, P., Isnard, L., Marchand, H., Masut, R.A. (1998). Competing Strain Relaxation Mechanisms in Organometallic Vapor Phase Epitaxy of Strain-Compensated GaInP/InAsP Multilayers on InP(001). Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(2), p. 776-780.
68	Fafard, S., Mccaffrey, J., Feng, Y., Allen, C.N., Marchand, H., Isnard, L., Desjardins, P., Guillon, S., Masut, R.a. (1998). Towards Quantum Dot Laser Diodes Emitting at 1.5 Microns. ICAPT '98 : Applications of Photonic Technology 3 :Closing the Gap Between Theory, Development, and Application, p. 271-276.
69	Guillon, S., Yip, R.Y.F., Desjardins, P., Chicoine, M., Bougrioua, Z., Beaudoin, M., Aït-Ouali, A., Masut, R.A. (1998). Low-Pressure Organometallic Vapor Phase Epitaxy of Coherent InGaAsP/InP and InGaAsP/InAsP Multilayers on InP(001). Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(2), p. 781-785.
70	Yip, R.Y.F., Desjardins, P., Isnard, L., Aït-Ouali, A., Bensaada, A., Marchand, H., Brebner, J.L., Currie, J.F., Masut, R.A. (1998). Band Alignment and Barrier Height Considerations for the Quantum-Confined Stark Effect. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(2), p. 801-804.
71	Yip, R.Y.F., Desjardins, P., Isnard, L., Ait-Ouali, A., Marchand, H., Brebner, J.L., Currie, J.F., Masut, R.A. (1998). Band Alignment Engineering for High Speed, Low Drive Field Quantum-Confined Stark Effect Devices. Journal of Applied Physics, 83(3), p. 1758-1769.
72	Zhao, Y.G., Qin, Y.D., Huang, X.L., Wang, J.J., Zou, Y.H., Masut, R.A., Beaudoin, M. (1998). Photoexcited Carrier Diffusion Dependence of Differential Reflection Dynamics in Inasxp1-X/Inp (X <= 0.35) Strained- Multiple-Quantum Wells. Solid State Communications, 105(6), p. 393-397.
73	Zhao, Y.G., Zou, Y.H., Huang, X.L., Wang, J.J., Qin, Y.D., Masut, R.A., Beaudoin, M. (1998). Differential Reflection Dynamics in Inasxp1-X/Inp (X <= 0.35) Strained-Multiple-Quantum Wells. Journal of Applied Physics, 83(8), p. 4430-4435.
74	Zhao, Y.G., Zou, Y.H., Wang, J.J., Qin , Y.D., Huang, X.L., Masut, R.a., Bensaada, a. (1998). Effect of Interface Roughness and Well Width on Differential Reflection Dynamics in InGaAs/InP Quantum Wells. Applied Physics Letters, 72(1), p. 97-99.
75	Ababou, Y., Desjardins, P., Chennouf, A., Masut, R.A., Yelon, A., Beaudoin, M., Bensaada, A., Leonelli, R., L'Espérance, G. (1997). Optical Absorption and Determination of Band Offset in Strain-Balanced GaInP/InAsP Multiple Quantum Wells Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy. Semiconductor Science and Technology, 12(5), p. 550-554.
76	Chicoine, M., Roorda, S., Cliche, L., Masut, R.A. (1997). Directional Effects During Ion Implantation: Lateral Mass Transport and Anisotropic Growth. Physical Review. B, Condensed Matter, 56(3), p. 1551-1560.
77	Cova, P., Singh, A., Masut, R.A. (1997). A Self-Consistent Technique for the Analysis of the Temperature Dependence of Current-Voltage and Capacitance-Voltage Characteristics of a Tunnel Metal-Insulator-Semiconductor Structure. Journal of Applied Physics, 82(10), p. 5217-5226.
78	Desjardins, P., Marchand, H., Isnard, L., Masut, R.A. (1997). Microstructure and Strain Relaxation in Organometallic Vapor Phase Epitaxy of Strain-Compensated GaInP/InAsP Multilayers on InP(001). Journal of Applied Physics, 81(8, pt. 1), p. 3501-3511.
79	Marchand, H., Desjardins, P., Guillon, S., Paultre, J.-E., Bougrioua, Z., Yip, R.Y.F., Masut, R.A. (1997). Growth of Self-Assembled InAs/InP(001) Nanometer-Sized Islands by Metalorganic Vapor Phase Epitaxy. Applied Physics Letters, 71(4), p. 527-529.
80	Marchand, H., Desjardins, P., Guillon, S., Paultre, J.-E., Bougrioua, Z., Yip, R.Y.F., Masut, R.A. (1997). Metalorganic Vapor Phase Epitaxial Growth and Structural Characterization of Self-Assembled InAs Nanometer-Sized Islands on InP(001). Journal of Electronic Materials, 26(10), p. 1205-1213.
81	Marchand, H., Desjardins, P., Guillon, S., Paultre, J.E., Bougrioua, Z., Yip, R.Y.F., Masut, R.A. (1997). Metalorganic Vapor Phase Epitaxy of Coherent Self-Assembled Inas Nanometer-Sized Islands in Inp(001). Applied Physics Letters, 71(4), p. 527-529.
82	Nazareno, H.N., Masut, R.A. (1997). Bloch Oscillations in a Boltzmann Transport Equation Formalism Under the Relaxation Time Approximation. Solid State Communications, 101(11), p. 819-823.
83	Yip, R.Y.F., Ait Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J.L., Currie, J.F., Masut, R.A. (1997). Erratum: Strain and Relaxation Effects in InAsP/InP Multiple Quantum Well Optical Modulator Devices Grown by Metal-Organic Vapor Phase Epitaxy. Journal of Applied Physics, 82(12), p. 6372.
84	Yip, R.Y.F., Aït-Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J.L., Currie, J.F., Masut, R.A. (1997). Strain and Relaxation Effects in InAsP/InP Multiple Quantum Well Optical Modulator Devices Grown by Metalorganic Vapor Phase Epitaxy. Journal of Applied Physics, 81(4), p. 1905-1915.
85	Yip, R.Y.F., Aït-Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J.L., Currie, J.F., Masut, R.A. (1997). Erratum: "Strain and Relaxation Effects in InAsP/InP Multiple Quantum Well Optical Modulator Devices Grown by Metalorganic Vapor Phase Epitaxy" [J. Appl. Phys. 81, 1905 (1997)]. Journal of Applied Physics, 82(12), p. 6372.
86	Yip, R.Y.F., Masut, R.A. (1997). Band Alignment Strategy for Efficient Optical Modulation in Quantum-Confined Stark Effect Devices. Journal of Applied Physics, 82(4), p. 1976-1978.
87	Ababou, Y., Desjardins, P., Chennouf, A., Leonelli, R., Hetherington, D., Yelon, A., L'Espérance, G., Masut, R.A. (1996). Structural and Optical Characterization of InP Grown on Si(111) by Metalorganic Vapor Phase Epitaxy Using Thermal Cycle Growth. Journal of Applied Physics, 80(9), p. 4997-5005.
88	Ababou, Y., Desjardins, P., Masut, R.A., Yelon, A., L'Espérance, G. (1996). Metalorganic Vapor Phase Epitaxy and Structural Characterization of InP on Si(111). Canadian Journal of Physics, 74(1), p. S108-S111.
89	Abadou, Y., Desjardins, P., Chennouf, A., Leonelli, R., Hetheringtin, A., Yelon, A., L'Espérance, G., Masut, R.A. (1996). Structural and Optical Charact. of InP Grown on Si(111) by Metalorganic Vapor Phase Epitaxy Using Thermal Cycle Growth. Journal of Applied Physics, 80(9), p. 499-505.
90	Beaudoin, M., Bensaada, A., Leonelli, R., Desjardins, P., Masut, R.A., Isnard, L., Chennouf, A., L'Espérance, G. (1996). Self-Consistent Determination of the Band Offsets in InAsxP1-x/InP Strained Layer Quantum Wells and the Bowing Parameter of Bulk InAsxP1-x. Physical Review. B, Condensed Matter, 53(4), p. 1990-1996.
91	Cleton, F., Sieber, B., Lefebvre, A., Bensaada, A., Masut, R.A., Bonard, J.M., Ganiere, J.D., Ambri, M. (1996). Transmission Electron-Microscopy and Cathodoluminescence of Tensile-Strained Gaxin1-Xp/Inp Heterostructures .1. Spatial Variations of the Tensile-Stress Relaxation. Journal of Applied Physics, 80(2), p. 827-836.
92	Cleton, F., Sieber, B., Masut, R.A., Isnard, L., Bonard, J.M., Ganiere, J.D. (1996). Photon Recycling As the Dominant Process of Luminescence Generation in an Electron-Beam Excited N-Inp Epilayer Grown on an N(+)-Inp Substrate. Semiconductor Science and Technology, 11(5), p. 726-734.
93	Cliche, L., Roorda, S., Kajrys, G.E., Masut, R.A. (1996). A Comparison of Annealing Kinetics in Crystalline and Amorphous InP. Journal of Applied Physics, 79(4), p. 2142-2144.
94	Desjardins, P., Beaudoin, M., Leonelli, R., L'Espérance, G., Masut, R.A. (1996). Structural and Optical Properties of Strain-Relaxed InAsP/InP Heterostructures Grown by Metalorganic Vapor Phase Epitaxy on InP(001) Using Tertiarybutylarsine. Journal of Applied Physics, 80(2), p. 846-852.
95	Singh, A., Masut, R.A., Bensaada, A. (1996). Characterization of Interface States in Thin Epitaxial Film In0.75Ga0.25P/Ag Diodes. AIP Conference Proceedings, 378(1), p. 391-394.
96	Sundararaman, C.S., Tazlauanu, M., Mihelich, P., Bensaada, A., Masut, R.A. (1996). 1-10 GHz Interface Engineered SiNx/InP/InGaAs HIGFET Technology. Proceedings of the 1996 8th International Conference on Indium Phosphide and Related Materials, p. 697-700.
97	Zhao, Y.G., Jing, R., Zou, Y.H., Xia, Z.J., Huang, X.L., Chen, W.X., Masut, R.A. (1996). Alloy Composition Dependence of Photoexcited Carrier Dynamics in Gaxin1-Xp/Inp-Fe(x-Less-Than-0.18). Applied Physics Letters, 68(5), p. 696-698.
98	Ababou, Y., Desjardins, P., Chennouf, A., Masut, R.A., Yelon, A., Leonelli, R., L'Espérance, G. (1995). Growth of Strain-Balanced GaInP/InAsP MQW by LP-MOVPE. Sixth European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Techniques.
99	Ababou, Y., Masut, R.A., Yelon, A., Poulin, S. (1995). Low Temperature Heteroepitaxy of InP on Si(111) Substrates Treated With Buffered HF Solution. Applied Physics Letters, 66(24), p. 3352-3354.
100	Beaudoin, M., Masut, R.A., Isnard, L., Desjardins, P., Bensaada, A., L'Espérance, G., Leonelli, R. (1995). Band Offsets of InAsxP1-x/InP Strained Layer Quantum Wells Grown by LP-MOVPE Using TBAs. Microcrystalline and Nanocrystalline Semiconductors : Symposium F of the 1994 Fall Meeting of the Materials Research Society, p. 1005-1010.
101	Bensaada, A., Suys, M., Beaudoin, M., Desjardins, P., Isnard, L., Masut, R.A., Cochrane, R.W., Currie, J.F., L'Espérance, G. (1995). LP-MOVPE Growth and Characterization of InxGa1-XAs/InP Epilayers and Multiple Quantum Wells Using Tertiarybutylarsine. Sixth European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques.
102	Cleton, F., Sieber, B., Isnard, L., Masut, R., Bonard, J.M., Ganiere, J.D. (1995). Band-to-Band Recombination in N+ Inp Substrate - Evidence of Photon Recycling. Institute of Physics Conference Series, 146, p. 745-750.
103	Cliche, L., Roorda, S., Chicoine, M., Masut, R.A. (1995). Beam-Solid Interactions: Directional Mass Transport by Momentum Transfer. Ninth International Conference on Ion Beam Modification of Materials. Book of Abstracts, p. 16005.
104	Cliche, L., Roorda, S., Chicoine, M., Masut, R.A. (1995). Directional Mass Transport by Momentum Transfer From Ion Beam to Solid. Physical Review Letters, 75(12), p. 2348-2351.
105	Cliche, L., Roorda, S., Masut, R.A. (1995). Viscosity of Amorphous Inp During Room-Temperature Structural Relaxation. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 96(1-2), p. 319-322.
106	Masut, R.A., Tran, C.A., Beaudoin, M., Leonelli, R. (1995). Strained InAs/InP Quantum Wells and Quantum Dots for Optoelectronic Device Applications. Circular-Grating Light-Emitting Sources, p. 116-124.
107	Roorda, S., Cliche, L., Chicoine, M., Masut, R.A. (1995). Novel Beam Effect - Mass-Transport Due to the Lateral Component of the Ion Momentum. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 106(1-4), p. 80-83.
108	Bensaada, A., Chennouf , A., Cochrane, R.W., Graham, J.T., Leonelli, R., Masut, R.A. (1994). Misfit Strain, Relaxation, and Band-Gap Shift in GaxIn1-XP/InP Epitaxial Layers. Journal of Applied Physics, 75(6), p. 3024-3029.
109	Bensaada, A., Graham, J.T., Brebner, J.L., Chennouf, A., Cochrane, R.W., Leonelli, R., Masut, R.A. (1994). Band Alignment in Gaxin1-Xp Inp Heterostructures. Applied Physics Letters, 64(3), p. 273-275.
110	Cliche, L., Roorda, S., Masut, R.A. (1994). Persistent Room-Temperature Relaxation of InP Amorphized and Compacted by MeV Ion Beams. Applied Physics Letters, 65(14), p. 1754-1756.
111	Cova, P., Masut, R.A., Tran, C.A., Bensaada, A., Currie, J.F. (1994). Combustion of Effluent Gases From a Metal-Organic Vapor Phase Epitaxy System. Combustion Science and Technology, 97(1-3), p. 1-11.
112	Singh, A., Cova, P., Masut, R.A. (1994). Reverse Iv and C-v Characteristics of Schottky-Barrier Type Diodes on Zn Doped Inp Epilayers Grown by Metalorganic Vapor-Phase Epitaxy. Journal of Applied Physics, 76(4), p. 2336-2342.
113	Sundararaman, C.S., Milhelich, P., Masut, R.A., Currie, J.F. (1994). Conductance Study of Silicon Nitride/InP Capacitors With an In2S3 Interface Control Layer. Applied Physics Letters, 64(17), p. 2279-2281.
114	Tran, C.A., Brebner, J.L., Leonelli, R., Jouanne, M., Masut, R.A. (1994). E(1)-Gap Resonant Enhancement of the Raman-Scattering From Highly Strained Inas Inp Short-Period Superlattices. Superlattices and Microstructures, 15(4), p. 391-397.
115	Tran, C.A., Brebner, J.L., Leonelli, R., Jouanne, M., Masut, R.A. (1994). Optical Phonons in Strained Single InAs/InP Quantum Wells: A Raman Study. Physical Review. B, Condensed Matter, 49(16), p. 11268-11271.
116	Tran, C.A., Graham, J.T., Brebner, J.L., Masut, R.A. (1994). Interfaces of Inasp/Inp Multiple Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy. Journal of Electronic Materials, 23(12), p. 1291-1296.
117	Tran, C.A., Masut, R.A., Brebner, J.L., Jouanne, M. (1994). Atomic Layer Epitaxy and Structural Characterization of InP and InAs/InP Heterostructures. Journal of Applied Physics, 75(5), p. 2398-2405.
118	Tran, C.A., Masut, R.A., Brebner, J.L., Jouanne, M., Salamancariba, L., Shen, C.C., Sieber, B., Miri, A. (1994). Atomic Layer Epitaxy and Characterization of Inp and Inas/Inp Heterostructures. Journal of Crystal Growth, 145(1-4), p. 332-337.
119	Watkins, S.P., Ares, R., Masut, R.A., Tran, C.A., Brebner, J.L. (1994). Strain Effects in High-Purity InP Epilayers Grown on Slightly Mismatched Substrates. Journal of Applied Physics, 75(5), p. 2460-2465.
120	Zhao, Y.G., Masut, R.A., Brebner, J.L., Tran, C.A., Graham, J.T. (1994). Temperature Dependence of Photoluminescence in InAsP/InP Strained Multiple Quantum Wells. Journal of Applied Physics, 76(10), p. 5921-5926.