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Masut, Rémo A.

Directory of Experts

Masut, Rémo A.

Directory of Experts

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Journal article (126) Conference paper (29) Book Book chapter (1) Patent Report Thesis Dataset Teaching resource Image Audio recording Video recording Other

Rémo Masut (156)

Journal articles (126)
- 2024
  - Masut, R. A. (2024). Low temperature heat transport in crystalline bismuth telluride. AIP Advances, 14(12).
  - Vasilevskiy, D., Turenne, S., & Masut, R. A. (2024). Self-contained calibration samples and measurements of the thermoelectric figure of merit: A method to improve accuracy. Journal of Applied Physics, 135(11), 0200082 (11 pages).
- 2023
  - Masut, R. A. (2023). Heat Transport in Hot Extruded Bulk Polycrystalline Thermoelectric Alloys Based on Bi₂Te₃. Journal of Electronic Materials, 52(10), 6929-6942.
  - Masut, R. A. (2023). Poisson's equation in semiconductors: impact of charge depletion on Hall effect measurements. Canadian Journal of Physics, 101(3), 141-149.
- 2022
  - Masut, R. A. (2022). Highlighting non-parabolic bands in semiconductors. European Journal of Physics, 43(1), 15 pages.
  - Masut, R. A., André, C., & Vasilevskiy, D. (2022). Hot Extruded Bulk Polycrystalline (Bi₁-ₓSbₓ)₂(Te₁-ySey)₃ Alloys: Electron Transport and Lattice Thermal Conductivity. Journal of Electronic Materials, 52(1), 707-717.
  - Daoust, P., Desjardins, P., Masut, R. A., & Côté, M. (2022). Longitudinal piezoelectric, elastic, and dielectric properties of rare-earth aluminum nitride alloys determined by density-functional perturbation theory. Physical Review Materials, 6(3), 13 pages.
  - Schmidt, N., Nateghi, N., Lacroix, C., Ménard, D., & Masut, R. A. (2022). Manganese phosphide nano-clusters embedded in a polystyrene matrix. Journal of Magnetism and Magnetic Materials, 562, 169705 (10 pages).
  - Nateghi, N., & Masut, R. A. (2022). Manganese phosphide nanoclusters embedded in epitaxial gallium phosphide grown from the vapor phase: Non-negligible role of Mn diffusion in growth kinetics. Journal of Vacuum Science & Technology A, 40(5), 9 pages.
  - Masut, R. A. (2022). Role of deep defects on the transport properties of polycrystalline thermoelectric alloys and composites. Journal of Electronic Materials, 51(9), 4816-4823.
  - Masut, R. A. (2022). Ubiquity of the kinetic compensation effect: A consequence of the existence of a maximum in energy dissipation. Journal of Applied Physics, 132(8), 11 pages.
- 2021
  - Masut, R. A., Vasilevskiy, D., & Keshavarz, M. K. (2021). Elastic modulus and internal friction of thermoelectric composites: Enthalpy–entropy compensation. Journal of Applied Physics, 129(24), 11 pages.
  - Daoust, P., Côté, M., Desjardins, P., & Masut, R. A. (2021). Impact of applied biaxial stress on the piezoelectric, elastic, and dielectric properties of scandium aluminum nitride alloys determined by density functional perturbation theory. AIP Advances, 11(9), 15 pages.
- 2020
  - Py-Renaudie, A., Daoust, P., Côté, M., Desjardins, P., & Masut, R. A. (2020). Ab initio piezoelectric properties of wurtzite ZnO-based alloys: Impact of the c/a cell ratio. Physical Review Materials, 4(5), 053601 (9 pages).
  - Masut, R. A., André, C., Vasilevskiy, D., & Turenne, S. (2020). Charge transport anisotropy in hot extruded bismuth telluride: Scattering by acoustic phonons. Journal of Applied Physics, 128(11), 10 pages.
  - Nateghi, N., Lambert-Milot, S., & Masut, R. A. (2020). Epitaxial to axiotaxial texture evolution in endotaxial MnP films grown on GaP (100). Journal of Vacuum Science & Technology A, 38(3), 8 pages.
- 2018
  - Vasilevskiy, D., Masut, R. A., & Turenne, S. (2018). A Phenomenological Model of Unconventional Heat Transport Induced by Phase Transition in Cu2−xSe. Journal of Electronic Materials, 48(4), 1883-1888.
  - Vasilevskiy, D., Keshavarz, M. K., Simard, J.-M., Masut, R. A., Turenne, S., & Snyder, G. J. (2018). Assessing the thermal conductivity of Cu2xSe alloys undergoing a phase transition via the simultaneous measurement of thermoelectric parameters by a Harman-based setup. Journal of Electronic Materials, 47(6), 3314-3319.
  - Masut, R. A. (2018). Incorporation of Si during vapor phase epitaxy of III-V compounds: evidence of an enthalpy-entropy compensation effect. Journal of Applied Physics, 124(9), 7 pages.
  - Verdier, P., Vasilevskiy, D., Turenne, S., & Masut, R. A. (2018). Microstructure and Thermoelectric Properties of Hot Extruded Sb-Doped Mg₂Si Using MoS₂ Nano-particles as Lubricant. Journal of Electronic Materials, 47(11), 6833-6841.
- 2017
  - Daoust, P., Desjardins, P., Masut, R. A., Gosselin, V., & Côté, M. (2017). Ab initio piezoelectric properties of Al₀.₅ Sc₀.₅ N : impact of alloy configuration on the d₃₃,f piezoelectric strain coefficient. Physical Review Materials, 1(5), 5 pages.
- 2016
  - Vasilevskiy, D., Simard, J. M., Caillat, T., Masut, R. A., & Turenne, S. (2016). Consistency of ZT-Scanner for Thermoelectric Measurements from 300 K to 700 K: A Comparative Analysis Using Si₈₀Ge₂₀ Polycrystalline Alloys. Journal of Electronic Materials, 45(3), 1540-1547.
  - Bercegol, A., Christophe, V., Keshavarz, M. K., Vasilevskiy, D., Turenne, S., & Masut, R. A. (2016). Hot extruded polycrystalline Mg₂Si with embedded XS₂ nano-particles (X: Mo, W). Journal of Electronic Materials, 46(5), 2668-2675.
  - Nateghi, N., Lambert-Milot, S., Ménard, D., & Masut, R. A. (2016). Manganese phosphide thin films and nanorods grown on gallium phosphide and on glass substrates. Journal of Crystal Growth, 442, 75-80.
  - Keshavarz, M. K., Vasilevskiy, D., Masut, R. A., & Turenne, S. (2016). Mechanical properties of bismuth telluride based alloys with embedded MoS2nano-particles. Materials & Design, 103, 114-121.
  - Vasilevskiy, D., Simard, J. M., Masut, R. A., & Turenne, S. (2016). Reduction of Specimen Size for the Full Simultaneous Characterization of Thermoelectric Performance. Journal of Electronic Materials, 46(5), 3007-3011.
  - Lacroix, C., Lambert-Milot, S., Desjardins, P., Masut, R. A., & Ménard, D. (2016). Surface induced magnetization reversal of MnP nanoclusters embedded in GaP. Journal of Applied Physics, 119(10).
- 2015
  - Vasilevskiy, D., Simard, J. M., Masut, R. A., & Turenne, S. (2015). System for Simultaneous Harman-Based Measurement of All Thermoelectric Properties, from 240 to 720 K, by Use of a Novel Calibration Procedure. Journal of Electronic Materials, 44(6), 1733-1742.
- 2014
  - Nateghi, S. N., Ménard, D., & Masut, R. A. (2014). Large interface diffusion in endotaxial growth of MnP films on GaP substrates. Journal of Applied Physics, 116(13), 133512-133512.
  - Keshavarz, M. K., Vasilevskiy, D., Masut, R. A., & Turenne, S. (2014). Synthesis and characterization of bismuth telluride-based thermoelectric nanocomposites containing MoS2 nano-inclusions. Materials Characterization, 95, 44-49.
- 2013
  - Lacroix, C., Lambert-Milot, S., Masut, R. A., Desjardins, P., & Ménard, D. (2013). Ferromagnetic resonance measurements of GaP epilayers with embedded MnP nanoclusters grown on GaP(001). Physical Review B, 87(2), 024412 (10 pages).
- 2012
  - Turcotte, S., Beaudry, J.-N., Masut, R. A., Desjardins, P., Bentoumi, G., & Leonelli, R. (2012). Abnormal Broadening of the Optical Transitions in (Ga,As)N/GaAs Quantum Wells. Physical Review B, 85(3), 033304 (4 pages).
  - Lambert-Milot, S., Gaudet, S., Lacroix, C., Ménard, D., Masut, R. A., Lavoie, C., & Desjardins, P. (2012). MnP nanoclusters embedded in GaP epitaxial films grown by organometallic vapor-phase epitaxy: A reciprocal space mapping and transmission electron microscopy study. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 30(6), 22-22.
  - Monette, G., Nateghi, S. N., Masut, R. A., Francoeur, S., & Ménard, D. (2012). Plasmonic enhancement of the magneto-optical response of MnP nanoclusters embedded in GaP epilayers. Physical Review B, 86(24), 245312 (12 pages).
- 2011
  - De Andrés, A., Ramírez-Jiménez, R., García-Hernández, M., Lambert-Milot, S., & Masut, R. A. (2011). Confinement effects on the low temperature magnetic structure of MnP nanocrystals. Applied Physics Letters, 99(18), 182506-1-182506-3.
  - André, C., Vasilevskiy, D., Turenne, S., & Masut, R. A. (2011). Increase in the density of states in n-type extruded (Bi₍₁₋ₓ₎Sbₓ)₂(Te₍₁₋y₎Sey)₃ thermoelectric alloys. Journal of Physics D: Applied Physics, 44(23), 235401-235401.
  - de Andrés, A., Espinosa, A., Prieto, C., García-Hernández, M., Ramírez-Jiménez, R., Lambert-Milot, S., & Masut, R. A. (2011). MnP films and MnP nanocrystals embedded in GaP epilayers grown on GaP(001): Magnetic properties and local bonding structure. Journal of Applied Physics, 109(11), 113910.
  - Vasilevskiy, D., Bourbia, O., Gosselin, S., Turenne, S., & Masut, R. A. (2011). Nanostructure characterization of bismuth telluride-based powders and extruded alloys by various experimental methods. Journal of Electronic Materials, 40(5), 1046-1051.
  - Lévesque, A., Desjardins, P., Leonelli, R., & Masut, R. A. (2011). Temperature dependence of the photoluminescence spectra from InAs(P)/InP multilayers containing thick quantum dots: Dot-size-dependent carrier dynamics. Physical Review. B, Condensed Matter and Materials Physics, 83(23), 235304.
- 2010
  - Gelinas, G., Lanacer, A., Leonelli, R., Masut, R. A., & Poole, P. J. (2010). Carrier thermal escape in families of InAs/InP self-assembled quantum dots. Physical Review. B, Condensed Matter and Materials Physics, 81(23), 235426.
  - Turenne, S., Clin, T., Vasilevskiy, D., & Masut, R. A. (2010). Finite element thermomechanical modeling of large area thermoelectric generators based on bismuth telluride alloys. Journal of Electronic Materials, 39(9), 1926-1933.
  - Vasilevskiy, D., Dawood, M. S., Masse, J.-P., Turenne, S., & Masut, R. A. (2010). Generation of nanosized particles during mechanical alloying and their evolution through the hot extrusion process in bismuth-telluride-based alloys. Journal of Electronic Materials, 39(9), 1890-1896.
- 2009
  - Lacroix, C., Lambert-Milot, S., Desjardins, P., Masut, R. A., & Ménard, D. (2009). Adjusting the magnetic properties of semiconductor epilayers by the crystallographic orientation of embedded highly anisotropic magnetic nanoclusters. Journal of Applied Physics, 105(7), 07-119.
  - Turcotte, S., Larouche, S., Beaudry, J.-N., Martinu, L., Masut, R. A., Desjardins, P., & Leonelli, R. (2009). Evidence of valence band perturbations in GaAsN/GaAs(001): Combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation. Physical Review B, 80(8).
- 2008
  - Turcotte, S., Beaudry, J. N., Masut, R. A., Desjardins, P., Bentoumi, G., & Leonelli, R. (2008). Experimental Investigation of the Variation of the Absorption Coefficient With Nitrogen Content in GaasN and GaInAsN Grown on GaAs (001). Journal of Applied Physics, 104(8), 083511.
  - Beaudry, J.-N., Masut, R. A., & Desjardins, P. (2008). GaAs₁₋ₓNₓ on GaAs(001): Nitrogen Incorporation Kinetics From Trimethylgallium, Tertiarybutylarsine, and 1,1-Dimethylhydrazine Organometallic Vapor-Phase Epitaxy. Journal of Crystal Growth, 310(6), 1040-1048.
  - Bentoumi, G., Yaïche, Z., Leonelli, R., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2008). Low-Temperature Emission in Dilute GaAsN Alloys Grown by Metalorganic Vapor Phase Epitaxy. Journal of Applied Physics, 103(6), 063526-1-063526-5.
  - Lacroix, C., Lambert-Milot, S., Desjardins, P., Masut, R. A., & Ménard, D. (2008). Magnetic Anisotropy in Gap(001) Epilayers Containing Mnp Nanoclusters Observed by Angle Dependent Ferromagnetic Resonance Measurements. Journal of Applied Physics, 103(7).
  - Lambert-Milot, S., Lacroix, C., Ménard, D., Masut, R. A., Desjardins, P., Garcia-Hernandez, M., & De Andres, A. (2008). Metal-Organic Vapor Phase Epitaxy of Crystallographically Oriented Mnp Magnetic Nanoclusters Embedded in Gap(001). Journal of Applied Physics, 104(8).
  - Lévesque, A., Shtinkov, N., Masut, R. A., & Desjardins, P. (2008). Self-Organization of InAs/InP Quantum Dot Multilayers: Pseudophase Diagram Describing the Transition From Aligned to Antialigned Structures. Physical Review Letters, 100(4).
- 2007
  - Beaudry, J.-N., Shtinkov, N., Masut, R. A., Desjardins, P., & Jiménez Riobóo, R. J. (2007). Compositional dependence of the elastic constants of dilute GaAs₁₋ₓNₓ alloys. Journal of Applied Physics, 101(11), 113507-1.
  - Lanacer, A., Shtinkov, N., Desjardins, P., Masut, R. A., & Leonelli, R. (2007). Optical Emission From InAs/InP Self-Assembled Quantum Dots: Evidence for As/P Intermixing. Semiconductor Science and Technology, 22(12), 1282-1286.
- 2006
  - Timoshevskii, V., Côté, M., Gilbert, G., Leonelli, R., Turcotte, S., Beaudry, J. N., Desjardins, P., Larouche, S., Martinu, L., & Masut, R. A. (2006). Experimental and Theoretical Studies of the E+ Optical Transition in GaAsN Alloys. Physical Review B, 74(16), 6 pages.
  - Shtinkov, N., Desjardins, P., Masut, R. A., & Côté, M. (2006). Nitrogen incorporation and lattice constant of strained dilute GaAs₁₋ₓNₓ layers on GaAs (001): an ab initio study. Physical Review. B, Condensed Matter and Materials Physics, 74(3), 035211 (8 pages).
- 2005
  - Cova, P., Poulin, S., Grenier, O., & Masut, R. A. (2005). A Method for the Analysis of Multiphase Bonding Structures in Amorphous SiOₓ Ny Films. Journal of Applied Physics, 97(7).
  - Bergeron, D., Shtinkov, N., Masut, R. A., & Desjardins, P. (2005). Green's function matching method for one- and zero-dimensional heterostructures. Physical Review. B, Condensed Matter and Materials Physics, 72(24), 245308.
  - Chicoine, M., Beaudoin, C., Roorda, S., Masut, R. A., & Desjardins, P. (2005). III-V Compliant Substrates Implemented by Nanocavities Introduced by Ion Implantation. Journal of Applied Physics, 97(6).
  - Lanacer, A., Chabot, J. F., Côté, M., Leonelli, R., Frankland, D., & Masut, R. A. (2005). Raman study of optical phonons in ultrathin InAs/InP single strained quantum wells. Physical Review. B, Condensed Matter and Materials Physics, 7207(7), 075349.
  - Cova, P., Poulin, S., & Masut, R. A. (2005). X-Ray Photoelectron Spectroscopy and Structural Analysis of Amorphous Si OₓNy Films Deposited at Low Temperatures. Journal of Applied Physics, 98(9).
- 2004
  - Wei, P., Chicoine, M., Gujrathi, S., Schiettekatte, F., Beaudry, J. N., Masut, R. A., & Desjardins, P. (2004). Characterization of GaAs₁₋ₓ Nₓ epitaxial layers by ion beam analysis. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 908-911.
  - Shtinkov, N., Turcotte, S., Beaudry, J.-N., Desjardins, P., & Masut, R. A. (2004). Electronic and Optical Properties of Gaasn/Gaas Quantum Wells: a Tight-Binding Study. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(4), 1606-1609.
  - Turcotte, S., Shtinkov, N., Desjardins, P., Masut, R. A., & Leonelli, R. (2004). Empirical Tight-Binding Calculations of the Electronic Structure of Dilute III-V-N Semiconductor Alloys. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 776-780.
  - Bentoumi, G., Timoshevskii, V., Madini, N., Côté, M., Leonelli, R., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2004). Evidence for large configuration-induced band-gap fluctuations in GaAs₁₋ₓNₓ alloys. Physical Review. B, Condensed Matter and Materials Physics, 70(3), 35315.1-35315.5.
  - Shtinkov, N., Desjardins, P., Masut, R. A., & Vlaev, S. J. (2004). Lateral confinement and band mixing in ultrathin semiconductor quantum wells with steplike interfaces. Physical Review. B, Condensed Matter and Materials Physics, 70(15), 155302.
  - Beaudry, J.-N., Masut, R. A., Desjardins, P., Wei, P., Chicoine, M., Bentoumi, G., Leonelli, R., Schiettekatte, F., & Guillon, S. (2004). Organometallic vapor phase epitaxy of GaAs₁₋ₓNₓ alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 771-775.
- 2003
  - Shtinkov, N., Desjardins, P., & Masut, R. A. (2003). Empirical tight-binding model for the electronic structure of dilute GaNAs alloys. Physical Review. B, Condensed Matter and Materials Physics, 67(8), 081202.
  - Chicoine, M., Roorda, S., Masut, R. A., & Desjardins, P. (2003). Nanocavities in He Implanted InP. Journal of Applied Physics, 94(9), 6116-6121.
  - Malikova, L., Pollak, F. H., Masut, R. A., Desjardins, P., & Mourokh, L. G. (2003). Temperature Dependent Contactless Electroreflectance Study of Intersubband Transitions in a Self-Assembled InAs/InP (001) Quantum Dot Structure. Journal of Applied Physics, 94(8), 4995-4998.
- 2002
  - Cova, P., Masut, R. A., Grenier, O., & Poulin, S. (2002). Effect of unintentionally introduced oxygen on the electron-cyclotron resonance chemical-vapor deposition of SiNₓ films. Journal of Applied Physics, 92(1), 129-138.
  - Shtinkov, N., Desjardins, P., & Masut, R. A. (2002). Electronic states of ultrathin InAs/InP (001) quantum wells: a tight-binding study of the effects of band offset, strain, and intermixing. Physical Review. B, Condensed Matter and Materials Physics, 66(19), 195303 (8 pages).
  - Frankland, D., Masut, R. A., & Leonelli, R. (2002). Growth and Characterization of InAs on (100) InP Ultrathin Single Quantum Wells Using Tertiarybutylarsine and Tertiarybutylphosphine. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 20(3), 1132-1134.
  - Spila, T., Desjardins, P., Vailionis, A., Kim, H., Taylor, N., Cahill, D. G., Greene, J. E., Guillon, S., & Masut, R. A. (2002). Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si₀.₇ Ge₀.₃ layers on Si(001). Journal of Applied Physics, 91(6), 3579-3588.
  - Vasilevskiy, D., Sami, A., Simard, J.-M., & Masut, R. A. (2002). Influence of Se on the electron mobility in extruded Bi₂(Te₁₋ₓSeₓ)₃ (x≤0.125) thermoelectric alloys. Journal of Applied Physics, 92(5), 2610-2613.
- 2000
  - D'arcy Gall, J., Desjardins, P., Petrov, I., Greene, J. E., Paultre, J. E., Masut, R. A., Gujrathi, S. C., & Roorda, S. (2000). Epitaxial metastable Ge₁₋y Cy (y≤0.02) alloys grown on Ge(001) from hyperthermal beams: C incorporation and lattice sites. Journal of Applied Physics, 88(1), 96-104.
  - Paki, P., Leonelli, R., Isnard, L., & Masut, R. A. (2000). Excitons in Ultrathin InAs/InP Quantum Wells: Interplay Between Extended and Localized States. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 18(3), 956-959.
  - Beaudoin, M., Desjardins, P., Aït-Ouali, A., Brebner, J. L., Yip, R. Y. F., Marchand, H., Isnard, L., & Masut, R. A. (2000). Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsₓP₁₋ₓ /GayIn₁₋yP multilayers on InP(001). Journal of Applied Physics, 87(5), 2320-2326.
  - Allard, M., Masut, R. A., & Boudreau, M. (2000). Temperature Determination in Optoelectronic Waveguide Modulators. Journal of Lightwave Technology, 18(6), 813-818.
- 1999
  - Aït-Ouali, A., Brebner, J. L., Yip, R. Y. F., & Masut, R. A. (1999). Analysis of the Stokes shift in InAsP/InP and InGaP/InP multiple quantum wells. Journal of Applied Physics, 86(12), 6803-6809.
  - Paki, P., Leonelli, R., Isnard, L., & Masut, R. A. (1999). Exciton Resonances in Ultrathin InAs/InP Quantum Wells. Applied Physics Letters, 74(10), 1445-1447.
  - Paki, P., Leonelli, R., Isnard, L., & Masut, R. A. (1999). Optical Properties of Submonolayer Inas/Inp Quantum Dots on Vicinal Surfaces. Journal of Applied Physics, 86(12), 6789-6792.
  - Cova, P., Singh, A., & Masut, R. A. (1999). Simultaneous Analysis of Current-Voltage and Capacitance- Voltage Characteristics of Metal-Insulator-Semiconductor Diodes With a High Mid-Gap Trap Density. Journal of Applied Physics, 85(9), 6530-6538.
- 1998
  - Yip, R. Y.-F., Desjardins, P., Isnard, L., Aït-Ouali, A., Bensaada, A., Marchand, H., Brebner, J. L., Currie, J. F., & Masut, R. A. (1998). Band alignment and barrier height considerations for the quantum-confined Stark effect. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 801-804.
  - Yip, R. Y. F., Desjardins, P., Isnard, L., Aït-Ouali, A., Marchand, H., Brebner, J. L., Currie, J. F., & Masut, R. A. (1998). Band Alignment Engineering for High Speed, Low Drive Field Quantum-Confined Stark Effect Devices. Journal of Applied Physics, 83(3), 1758-1769.
  - Desjardins, P., Isnard, L., Marchand, H., & Masut, R. A. (1998). Competing strain relaxation mechanisms in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001). Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 776-780.
  - Zhao, Y. G., Zou, Y. H., Huang, X. L., Wang, J. J., Qin, Y. D., Masut, R. A., & Beaudoin, M. (1998). Differential Reflection Dynamics in InAsₓP₁₋ₓ/InP (x≤0.35) Strained-Multiple-Quantum Wells. Journal of Applied Physics, 83(8), 4430-4435.
  - Cova, P., Singh, A., Medina, A., & Masut, R. A. (1998). Effect of Doping on the Forward Current-Transport Mechanisms in a Metal-Insulator-Semiconductor Contact to InP:Zn Grown by Metal Organic Vapor Phase Epitaxy. Solid-State Electronics, 42(4), 477-485.
  - Zhao, Y. G., Zou, Y. H., Wang, J. J., Qin, Y. D., Huang, X. L., Masut, R. A., & Bensaada, A. (1998). Effect of interface roughness and well width on differential reflection dynamics in InGaAs/InP quantum wells. Applied Physics Letters, 72(1), 97-99.
  - Aït-Ouali, A., Chennouf, A., Yip, R. Y. F., Brebner, J. L., Leonelli, R., & Masut, R. A. (1998). Localization of Excitons by Potential Fluctuations and Its Effect on the Stokes Shift in InGaP/InP Quantum Confined Heterostructures. Journal of Applied Physics, 84(10), 5639-5642.
  - Ababou, Y., Masut, R. A., & Yelon, A. (1998). Low-Pressure Metalorganic Vapor Phase Epitaxy of Inp on (111) Substrates. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 790-793.
  - Guillon, S., Yip, R. Y.-F., Desjardins, P., Chicoine, M., Bougrioua, Z., Beaudoin, M., Aït-Ouali, A., & Masut, R. A. (1998). Low-pressure organometallic vapor phase epitaxy of coherent InGaAsP/InP and InGaAsP/InAsP multilayers on InP(001). Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 781-785.
  - Zhao, Y. G., Qin, Y. D., Huang, X. L., Wang, J. J., Zou, Y. H., Masut, R. A., & Beaudoin, M. (1998). Photoexcited Carrier Diffusion Dependence of Differential Reflection Dynamics in InAsₓP₁₋ₓ/InP (x≤0.35) Strained- Multiple-Quantum Wells. Solid State Communications, 105(6), 393-397.
  - Aït-Ouali, A., Yip, R. Y. F., Brebner, J. L., & Masut, R. A. (1998). Strain Relaxation and Exciton Localization Effects on the Stokes Shift in InAsₓP₁₋ₓ/InP Multiple Quantum Wells. Journal of Applied Physics, 83(6), 3153-3160.
- 1997
  - Cova, P., Singh, A., & Masut, R. A. (1997). A self-consistent technique for the analysis of the temperature dependence of current-voltage and capacitance-voltage characteristics of a tunnel metal-insulator-semiconductor structure. Journal of Applied Physics, 82(10), 5217-5226.
  - Yip, R. Y. F., & Masut, R. A. (1997). Band alignment strategy for efficient optical modulation in quantum-confined stark effect devices. Journal of Applied Physics, 82(4), 1976-1978.
  - Nazareno, H. N., & Masut, R. A. (1997). Bloch oscillations in a Boltzmann transport equation formalism under the relaxation time approximation. Solid State Communications, 101(11), 819-823.
  - Chicoine, M., Roorda, S., Cliche, L., & Masut, R. A. (1997). Directional effects during ion implantation: lateral mass transport and anisotropic growth. Physical review. B, Condensed matter, 56(3), 1551-1560.
  - Yip, R. Y. F., Ait Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Erratum: Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 82(12), 6372-6372.
  - Marchand, H., Desjardins, P., Guillon, S., Paultre, J.-E., Bougrioua, Z., Yip, R. Y.-F., & Masut, R. A. (1997). Metalorganic vapor phase epitaxial growth and structural characterization of self-assembled InAs nanometer-sized islands on InP(001). Journal of Electronic Materials, 26(10), 1205-1213.
  - Marchand, H., Desjardins, P., Guillon, S., Paultre, J. E., Bougrioua, Z., Yip, R. Y. F., & Masut, R. A. (1997). Metalorganic vapor phase epitaxy of coherent self-assembled inAs nanometer-sized islands in InP(001). Applied Physics Letters, 71(4), 527-529.
  - Desjardins, P., Marchand, H., Isnard, L., & Masut, R. A. (1997). Microstructure and strain relaxation in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001). Journal of Applied Physics, 81(8), 3501-3511.
  - Ababou, Y., Desjardins, P., Chennouf, A., Masut, R. A., Yelon, A., Beaudoin, M., Bensaada, A., Leonelli, R., & L'Espérance, G. (1997). Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapor phase epitaxy. Semiconductor Science and Technology, 12(5), 550-554.
  - Yip, R. Y.-F., Aït-Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 81(4), 1905-1915.
- 1996
  - Cliche, L., Roorda, S., Kajrys, G. E., & Masut, R. A. (1996). A comparison of annealing kinetics in crystalline and amorphous InP. Journal of Applied Physics, 79(4), 2142-2144.
  - Zhao, Y. G., Jing, R., Zou, Y. H., Xia, Z. J., Huang, X. L., Chen, W. X., & Masut, R. A. (1996). Alloy composition dependence of photoexcited carrier dynamics in GaₓIn₁−ₓP/InP:Fe (x<0.18). Applied Physics Letters, 68(5), 696-698.
  - Ababou, Y., Desjardins, P., Masut, R. A., Yelon, A., & L'Espérance, G. (1996). Metalorganic vapor phase epitaxy and structural characterization of InP on Si(111). Canadian Journal of Physics, 74(1), S108-S111.
  - Cléton, F., Sieber, B., Masut, R. A., Isnard, L., Bonard, J. M., & Ganière, J.-D. (1996). Photon recycling as the dominant process of luminescence generation in an electron-beam excited n-InP epilayer grown on an n⁺-InP substrate. Semiconductor Science and Technology, 11(5), 726-734.
  - Beaudoin, M., Bensaada, A., Leonelli, R., Desjardins, P., Masut, R. A., Isnard, L., Chennouf, A., & L'Espérance, G. (1996). Self-consistent determination of the band offsets in InAsₓP₁₋ₓ/InP strained layer quantum wells and the bowing parameter of bulk InAsₓP₁₋ₓ. Physical review. B, Condensed matter, 53(4), 1990-1996.
  - Ababou, Y., Desjardins, P., Chennouf, A., Leonelli, R., Hetherington, D., Yelon, A., L'Espérance, G., & Masut, R. A. (1996). Structural and optical charact. of InP grown on Si(111) by metalorganic vapor phase epitaxy using thermal cycle growth. Journal of Applied Physics, 80(9), 499-505.
  - Desjardins, P., Beaudoin, M., Leonelli, R., L'Espérance, G., & Masut, R. A. (1996). Structural and optical properties of strain-relaxed InAsP/InP heterostructures grown by metalorganic vapor phase epitaxy on InP(001) using tertiarybutylarsine. Journal of Applied Physics, 80(2), 846-852.
  - Cléton, F., Sieber, B., Bensaada, A., Masut, R. A., Bonard, J. M., & Ganière, J. D. (1996). Transmission electron microscopy and cathodoluminescence of tensile‐strained GaₓIn₁₋ₓP/InP heterostructures. II. On the origin of luminescence heterogeneities in tensile stress relaxed GaₓIn₁₋ₓP/InP heterostructures. Journal of Applied Physics, 80(2), 837-845.
  - Cléton, F., Sieber, B., Lefebvre, A., Bensaada, A., Masut, R. A., Bonard, J. M., Ganière, J. D., & Ambri, M. (1996). Transmission electron-microscopy and cathodoluminescence of tensile-strained GaₓIn₁₋ₓP/InP heterostructures . 1. Spatial variations of the tensile-stress relaxation. Journal of Applied Physics, 80(2), 827-836.
- 1995
  - Cliche, L., Roorda, S., Chicoine, M., & Masut, R. A. (1995). Directional mass transport by momentum transfer from ion beam to solid. Physical Review Letters, 75(12), 2348-2351.
  - Ababou, Y., Masut, R. A., Yelon, A., & Poulin, S. (1995). Low temperature heteroepitaxy of InP on Si(111) substrates treated with buffered HF solution. Applied Physics Letters, 66(24), 3352-3354.
- 1994
  - Tran, C. A., Masut, R. A., Brebner, J. L., Jouanne, M., Salamancariba, L., Shen, C. C., Sieber, B., & Miri, A. (1994). Atomic layer epitaxy and characterization of InP and InAs/InP heterostructures. Journal of Crystal Growth, 145(1-4), 332-337.
  - Tran, C. A., Masut, R. A., Brebner, J. L., & Jouanne, M. (1994). Atomic layer epitaxy and structural characterization of InP and InAs/InP heterostructures. Journal of Applied Physics, 75(5), 2398-2405.
  - Bensaada, A., Graham, J. T., Brebner, J. L., Chennouf, A., Cochrane, R. W., Leonelli, R., & Masut, R. A. (1994). Band alignment in GaₓIn₁₋ₓP/InP heterostructures. Applied Physics Letters, 64(3), 273-275.
  - Cova, P., Masut, R. A., Tran, C. A., Bensaada, A., & Currie, J. F. (1994). Combustion of effluent gases from a metal-organic vapor phase epitaxy system. Combustion Science and Technology, 97(1-3), 1-11.
  - Sundararaman, C. S., Milhelich, P., Masut, R. A., & Currie, J. F. (1994). Conductance study of silicon nitride/InP capacitors with an In₂S₃ interface control layer. Applied Physics Letters, 64(17), 2279-2281.
  - Tran, C. A., Brebner, J. L., Leonelli, R., Jouanne, M., & Masut, R. A. (1994). E₁-gap resonant enhancement of the raman-scattering from highly strained InAs/InP short-period superlattices. Superlattices and Microstructures, 15(4), 391-397.
  - Tran, C. A., Graham, J. T., Brebner, J. L., & Masut, R. A. (1994). Interfaces of InAsP/InP multiple quantum wells grown by metalorganic vapor phase epitaxy. Journal of Electronic Materials, 23(12), 1291-1296.
  - Bensaada, A., Chennouf, A., Cochrane, R. W., Graham, J. T., Leonelli, R., & Masut, R. A. (1994). Misfit strain, relaxation, and band-gap shift in GaₓIn₁₋ₓP/InP epitaxial layers. Journal of Applied Physics, 75(6), 3024-3029.
  - Tran, C. A., Brebner, J. L., Leonelli, R., Jouanne, M., & Masut, R. A. (1994). Optical phonons in strained single InAs/InP quantum wells: A Raman study. Physical review. B, Condensed matter, 49(16), 11268-11271.
  - Cliche, L., Roorda, S., & Masut, R. A. (1994). Persistent room-temperature relaxation of InP amorphized and compacted by MeV ion beams. Applied Physics Letters, 65(14), 1754-1756.
  - Singh, A., Cova, P., & Masut, R. A. (1994). Reverse I-V and C-V characteristics of Schottky-barrier type diodes on Zn doped InP epilayers grown by metalorganic vapor-phase epitaxy. Journal of Applied Physics, 76(4), 2336-2342.
  - Watkins, S. P., Arès, R., Masut, R. A., Tran, C. A., & Brebner, J. L. (1994). Strain effects in high-purity InP epilayers grown on slightly mismatched substrates. Journal of Applied Physics, 75(5), 2460-2465.
  - Zhao, Y. G., Masut, R. A., Brebner, J. L., Tran, C. A., & Graham, J. T. (1994). Temperature dependence of photoluminescence in InAsP/InP strained multiple quantum wells. Journal of Applied Physics, 76(10), 5921-5926.
Conference papers (29)
- 2014
  - Vasilevskiy, D., Keshavarz, M. K., Dufourcq, J., Ihou-Mouko, H., Navonne, C., Masut, R. A., & Turenne, S. (2014, September). Bulk Mg₂Si based n-type thermoelectric material produced by gas atomization and hot extrusion [Paper]. 12th European Conference on Thermoelectrics (ECT 2014), Madrid, Espagne. Published in Materials Today: Proceedings, 2(2).
- 2013
  - Prieto-Vargas, L., Turenne, S., Vasilevskiy, D., & Masut, R. A. (2013, October). Design optimization by numerical simulation of segmented-legs Bi 2Te3 based thermoelectric generator module [Paper]. Materials Science and Technology Conference and Exhibition (MS and T 2013), Montréal, Québec.
  - Keshavarz, M. K., Vasilevskiy, D., Masut, R. A., & Turenne, S. (2013, June). Effect of suppression of grain growth of hot extruded (Bi 0.2Sb0.8)2Te3 thermoelectric alloys by MoS2 nanoparticles [Paper]. International Conference on Thermoelectrics 2013, Kobe, Japan. Published in Journal of Electronic Materials, 43(6).
- 2012
  - Arreguín-Zavala, J., Vasilevskiy, D., Turenne, S., & Masut, R. A. (2012, July). Microwave sintering of Bi₂Te₃- and PbTe-based alloys: Structure and thermoelectric properties [Paper]. ICT/ECT Joint Conference 2012, Aalborg, Denmark. Published in Journal of Electronic Materials, 42(7).
  - Picard, M., Turenne, S., Vasilevskiy, D., & Masut, R. A. (2012, July). Numerical simulation of performance and thermomechanical behavior of thermoelectric modules with segmented bismuth-telluride-based legs [Paper]. ICT/ECT Joint Conference 2012, Aalborg, Denmark. Published in Journal of Electronic Materials, 42(7).
  - Keshavarz, M. K., Vasilevskiy, D., Masut, R. A., & Turenne, S. (2012, July). P-Type bismuth telluride based composite thermoelectric materials produced by mechanical alloying and hot extrusion [Paper]. ICT/ECT Joint Conference 2012, Aalborg, Denmark. Published in Journal of Electronic Materials, 42(7).
- 2011
  - Kashi, S., Keshavarz, M. K., Vasilevskiy, D., Masut, R. A., & Turenne, S. (2011, July). Effect of Surface Preparation on Mechanical Properties of Ni Contacts on Polycrystalline (Bi₁₋ₓSbₓ)₂(Te₁₋y Sey)₃ Alloys [Paper]. 30th International Conference on Thermoelectrics (ICT 2011), Traverse City, Michigan, USA. Published in Journal of Electronic Materials, 41(6).
  - Vasilevskiy, D., Masut, R. A., & Turenne, S. (2011, July). Thermoelectric and Mechanical Properties of Novel Hot-Extruded PbTe n-Type Material [Paper]. 30th International Conference on Thermoelectrics (ICT 2011), Traverse City, Michigan, USA. Published in Journal of Electronic Materials, 41(6).
- 2008
  - André, C., Vasilevskiy, D., Turenne, S., & Masut, R. A. (2008, August). Extruded bismuth-telluride-based n-type alloys for waste heat thermoelectric recovery applications [Paper]. 27th International Conference on Thermoelectrics, Corvallis, Oregon. Published in Journal of Electronic Materials, 38(7).
  - Clin, T., Turenne, S., Vasilevskiy, D., & Masut, R. A. (2008, August). Numerical simulation of the thermomechanical behavior of extruded bismuth telluride alloy module [Paper]. 27th International Conference on Thermoelectrics, Corvallis, Oregon. Published in Journal of Electronic Materials, 38(7).
  - Vasilevskiy, D., Turenne, S., & Masut, R. A. (2008, July). Thermoelectric extruded alloys for module manufacturing : 10 years of development at École Polytechnique de Montréal [Paper]. 5th European Conference on Thermoelectrics, Paris, France.
- 2007
  - Lacroix, C., Lambert-Milot, S., Desjardins, P., Masut, R. A., & Ménard, D. (2007, August). Magnetic anisotropy in GaP with embedded MnP nanoclusters [Paper]. 13th Canadian Semiconductor Technology Conference (CSTC 2007), Montréal, Québec.
- 2006
  - Vasilevskiy, D., Roy, F., Renaud, E., Masut, R. A., & Turenne, S. (2006, August). Mechanical Properties of the Interface Between Nickel Contact and Extruded (Bi₁₋ₓSbₓ)₂(Te₁₋ySey)₃ [Paper]. 25th International Conference on Thermoelectrics, Vienne, Autriche.
- 2005
  - Vasilevskiy, D., Frechette, P., Turenne, S., & Masut, R. A. (2005, June). Thermoelectric properties and transport phenomena in (Bi₁₋ₓSbₓ)₂(Te₁₋ySey)₃ quaternary n-type alloys produced by powder metallurgy and extrusion [Paper]. 24th International Conference on Thermoelectrics (ICT 2005), Clemson, SC, USA.
- 2004
  - Shtinkiv, N., Desjardins, P., & Masut, R. A. (2004, July). Localized and extended states in semiconductor quantum wells with wire-like interface Islands [Paper]. 27th international conference on the physics of semiconductors, Flagstaff, Arizona, USA.
- 2002
  - Shtinkov, N., Desjardins, P., & Masut, R. A. (2002, December). Lateral confinement of carriers in ultrathin semiconductor quantum wells [Paper]. 4th International Conference on Low Dimensional Structures and Devices (LDSD 2002), Fortaleza, Brazil. Published in Microelectronics Journal, 34(5-8).
- 2000
  - Raymond, S., Labrie, D., Girard, J.-F., Poirier, S., Awirothananon, S., Poole, P. J., Marchand, H., Desjardins, P., & Masut, R. A. (2000, November). Tuning of the electronic properties of self-assembled InAs/InP quantum dots by rapid thermal annealing [Paper]. Semiconductor quantum dots II, Boston, USA.
- 1998
  - Allard, M., Boudreau, M., & Masut, R. A. (1998, July). Thermal modelling and temperature measurements in optoelectronic waveguide devices [Paper]. ICAPT '98 : Applications of photonic technology 3 :closing the gap between theory, development, and application, Ottawa, CAN.
  - Fafard, S., McCaffrey, J., Feng, Y., Allen, C. N., Marchand, H., Isnard, L., Desjardins, P., Guillon, S., & Masut, R. A. (1998, July). Towards quantum dot laser diodes emitting at 1.5 μm [Paper]. ICAPT '98 : Applications of photonic technology 3 :closing the gap between theory, development, and application, Ottawa, CAN.
- 1996
  - Sundararaman, C. S., Tazlauanu, M., Mihelich, P., Bensaada, A., & Masut, R. A. (1996, April). 1-10 GHz interface engineered SiNₓ/InP/InGaAs HIGFET technology [Paper]. 1996 8th International Conference on Indium Phosphide and Related Materials, Schwaebisch-Gmuend, Germany.
- 1995
  - Cleton, F., Sieber, B., Isnard, L., Masut, R. A., Bonard, J. M., & Ganiere, J. D. (1995, March). Band-to-band recombination in N+ InP substrate: Evidence of photon recycling [Paper]. International Conference on Microscopy of Semiconducting Materials (MSM 1995), Oxford University, UK.
  - Cliche, L., Roorda, S., Chicoine, M., & Masut, R. A. (1995, February). Beam-solid interactions: directional mass transport by momentum transfer [Paper]. 9th international conference on ion beam modification of materials. Book of abstracts, Canberra (Australia).
  - Ababou, Y., Desjardins, P., Chennouf, A., Masut, R. A., Yelon, A., Leonelli, R., & L'Espérance, G. (1995, June). Growth of strain-balanced GaInP/InAsP MQW by LP-MOVPE [Paper]. 6th European workshop on Metal-Organic Vapour Phase Epitaxy and related techniques, Gent, Belgique.
  - Bensaada, A., Suys, M., Beaudoin, M., Desjardins, P., Isnard, L., Masut, R. A., Cochrane, R. W., Currie, J. F., & L'Espérance, G. (1995, June). LP-MOVPE growth and characterization of InₓGa₁₋ₓAs/InP epilayers and multiple quantum wells using tertiarybutylarsine [Paper]. 6th European Workshop on Metal-Organic Vapour Phase Epitaxy and related growth techniques, Ghent, Belgium.
  - Roorda, S., Cliche, L., Chicoine, M., & Masut, R. A. (1995, February). Novel beam effect - mass-transport due to the lateral component of the ion momentum [Paper]. International Conference on Ion Beam Modification of Materials, Canberra, Australia. Published in Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 106(1-4).
  - Masut, R. A., Tran, C. A., Beaudoin, M., & Leonelli, R. (1995, February). Strained InAs/InP quantum wells and quantum dots for optoelectronic device applications [Paper]. Circular-Grating Light-Emitting Sources, San Jose, CA, USA.
- 1994
  - Beaudoin, M., Masut, R. A., Isnard, L., Desjardins, P., Bensaada, A., L'Espérance, G., & Leonelli, R. (1994, November). Band offsets of InAsxP₁₋x/InP strained layer quantum wells grown by LP-MOVPE using TBAs [Paper]. Microcrystalline and nanocrystalline semiconductors : Symposium F of the 1994 Fall Meeting of the Materials Research Society, Boston, USA.
  - Singh, A., Masut, R. A., & Bensaada, A. (1994, September). Characterization of interface states in thin epitaxial film In₀.₇₅Ga₀.₂₅P/Ag diodes [Paper]. Surfaces, vacuum and their applications. Published in AIP Conference Proceedings, 378(1).
  - Cliche, L., Roorda, S., & Masut, R. A. (1994, June). Viscosity of amorphous inp during room-temperature structural relaxation [Paper]. 10th International Conference on Ion Implantation Technology (IIT 1994), Catania, Italy. Published in Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 96(1-2).
Book chapters (1)
- 2000
  - Beaudoin, M., Desjardins, P., Yip, R. Y.-F., & Masut, R. A. (2000). Optical and structural properties of InAsP/In(Ga)P multilayers on InP(001): Strained-layer multiple quantum well structures and devices. In Manasreh, M. O. (ed.), InP and related compounds : materials, applications and devices .

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Masut, Rémo A.

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Masut, Rémo A.

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Rémo Masut (156)